HYPERFAST DIODE Search Results

Contextual Info: RHRU7570, RHRU7580, RHRU7590, RHRU75100 y ' S em iconductor April 1995 75A, 700V- 1000V Hyperfast Diodes File Number 3925.1 Features • Hyperfast with Soft Recovery.<85ns RHRU7570, RHRU7580, RHRU7590 and RHRU75100 TA49068 are hyperfast diodes with soft recovery character­

Contextual Info: FFH75H60S Hyperfast Recovery Power Rectifier tm Features 75A, 600V Hyperfast Rectifier • High Speed Switching trr=40ns(Typ. @ IF=75A ) The FFH75H60S is a hyperfast diode with soft recovery characteristics (trr< 40ns). It has half the recovery time of

Contextual Info: RHRD660S November 2013 Data Sheet 6 A, 600 V, Hyperfast Diode Features • Hyperfast Recovery trr = 35 ns @ IF = 6 A The RHRD660S9A is a hyperfast diodes with soft recovery characteristics. It has the half recovery time of Ultrafast diodes and is silicon nitride passivated

Contextual Info: RHRP3060 30 A, 600 V Hyperfast Diodes Features Description • Hyperfast Recovery trr = 45 ns @ IF = 30 A The RHRP3060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted

Contextual Info: RHRG30120 November 2013 Data Sheet 30 A, 1200 V, Hyperfast Diode Features • Hyperfast Recovery trr = 85 ns @ IF = 30 A The RHRG30120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon

RHR15120

Abstract: DIODE RHR15120 RHRP15120
Contextual Info: RHRP15120 November 2013 Data Sheet 15 A, 1200 V, Hyperfast Diode Features • Hyperfast Recovery trr = 75 ns @ IF = 15 A The RHRP15120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted

RHR30120

Abstract: RHR30120 fairchild make
Contextual Info: RHRP30120 November 2013 Data Sheet 30 A, 1200 V, Hyperfast Diode Features • Hyperfast Recovery trr = 85 ns @ IF = 30 A The RHRP30120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted

Contextual Info: FFP08H60S 8 A, 600 V, Hyperfast II Diode Features Description • The FFP08H60S is a hyperfast II diode and silicon nitride passivated ion-implanted epitaxial planar construction. Hyperfast Recovery trr = 45 ns @ IF = 8 A • Max Forward Voltage, VF = 2.6 V (@ TC = 25°C)

Contextual Info: FFD04H60S Hyperfast II Diode Features Description • Hyperfast Recovery, trr = 60 ns @ IF = 4 A The FFD04H60S is a hyperfast II diode and silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling/clamping diodes in a variety of

Contextual Info: FFPF08H60S 8 A, 600 V, Hyperfast II Diode Features Description • Hyperfast Recovery trr = 45 ns @ IF = 8 A The FFPF08H60S is a hyperfast II diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar

RHRU75120

Contextual Info: RHRU75120 Data Sheet 75A, 1200V Hyperfast Diode PACKAGING AVAILABILITY PART NUMBER RHRU75120 PACKAGE TO-218 BRAND 3408.2 • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <85ns • Operating Temperature . . . . . . . . . . . . . . . . . . . .+175oC

Contextual Info: FFH75H60S 75 A, 600 V, Hyperfast Diode Features Description • Hyperfast Recovery trr = 75 ns @ IF = 75 A • Max Forward Voltage, VF = 1.8 V (@ TC = 25°C) The FFH75H60S is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is

RHRP8120

Contextual Info: RHRP8120 November 2013 Data Sheet 8 A, 1200 V, Hyperfast Diode Features • Hyperfast Recovery trr = 70 ns @ IF= 8 A • Max Forward Voltage, VF = 3.2 V (@ TC = 25°C) The RHRP8120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast

HRG75100

Abstract: RHRG75100 RHRG7570 RHRG7580 RHRG7590
Contextual Info: RHRG7570, RHRG7580, RHRG7590, RHRG75100 75A, 700V - 1000V Hyperfast Diode March 2001 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <85ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC STYLE TO-247

diode 1334

Abstract: RHR6120C RHRP6120CC TA49058
Contextual Info: RHRP6120CC S E M I C O N D U C T O R 6A, 1200V Hyperfast Dual Diode July 1996 Features Description • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <55ns The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time

HRU75100

Abstract: RHRU75100 RHRU7570 RHRU7580 RHRU7590
Contextual Info: RHRU7570, RHRU7580, RHRU7590, RHRU75100 75A, 700V - 1000V Hyperfast Diode March 2001 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <85ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC STYLE SINGLE LEAD TO-218

HRU75100

Abstract: RHRU75100 RHRU7570 RHRU7580 RHRU7590
Contextual Info: RHRU7570, RHRU7580, RHRU7590, RHRU75100 75A, 700V - 1000V Hyperfast Diode January 2002 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <85ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC STYLE SINGLE LEAD TO-218

Contextual Info: FFH75H60S 75 A, 600 V, Hyperfast Diode Features Description • Hyperfast Recovery trr = 75 ns @ IF = 75 A • Max Forward Voltage, VF = 1.8 V (@ TC = 25°C) The FFH75H60S is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is

Contextual Info: FFD04H60S tm Hyperfast II Rectifier Features 4A, 600V Hyperfast II Rectifier • High Speed Switching, rrt < 50ns The FFD04H60S is a hyperfast II rectifier and silicon nitride passivated ion-implanted epitaxial planar construction. • High Reverse Voltage and High Reliability

FFD04H60S

Abstract: hyperfast rectifier HIGH SPEED RECTIFIER
Contextual Info: FFD04H60S tm Hyperfast II Rectifier Features 4A, 600V Hyperfast II Rectifier • High Speed Switching, trr < 50ns The FFD04H60S is a hyperfast II rectifier and silicon nitride passivated ion-implanted epitaxial planar construction. • High Reverse Voltage and High Reliability

Contextual Info: FFPF04H60S tm Hyperfast 2 Rectifier Features 4A, 600V Hyperfast 2 Rectifier • High Speed Switching, rrt < 45ns • High Reverse Voltage and High Reliability • Low Forward Voltage, VF < 2.1V @ 4A • RoHS compliant The FFPF04H60S is a hyperfast 2 rectifier and silicon nitride

Contextual Info: RHRA1560CC Hyperfast Rectifier tm Features 15A, 600V Hyperfast Rectifier • High Speed Switching rrt < 35ns • High Reverse Voltage and High Reliability • Avalanche Energy Rated The RHRA1560CC is a hyperfast rectifier (trr<35ns) with soft recovery characteristics. It has half the recovery time of ultrafast

Contextual Info: RHRG7570, RHRG7580, RHRG7590, RHRG75100 y ' Semiconductor April 1995 75A, 700V- 1000V Hyperfast Diodes RHRG7570, RHRG7580, RHRG7590 and RHRG75100 TA49068 are hyperfast diodes with soft recovery character­ istics (tRR < 85ns). They have half the recovery time of

RHRG3040

Abstract: RHRG3050 RHRG3060 TA49063
Contextual Info: RHRG3040, RHRG3050, RHRG3060 April 1995 File Number 3938.2 30A, 400V - 600V Hyperfast Diodes Features RHRG3040, RHRG3050 and RHRG3060 TA49063 are hyperfast diodes with soft recovery characteristics (tRR < 40ns). They have half the recovery time of ultrafast diodes