HVM5 Search Results

HVM12

Abstract: HVM15
Contextual Info: HVM5 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HVM16 HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes FEATURES * * * * * * Low cost Low leakage Isolated case Surge overload rating - 50 amperes peak Mounting position: Any

HVM12 350

Abstract: HVM12 HVM10 diode HVM12 HVM15 HVM14 HVM16
Contextual Info: HVM5 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HVM16 HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes FEATURES * * * * * * Low cost Low leakage Isolated case Surge overload rating - 50 amperes peak Mounting position: Any

Contextual Info: "H YU NDA I HYM532220A E-Series 2M x 32-bit CMOS DRAM MODULE DESCRIPTION The HVM532220A is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72pin glass-epoxy printed circuit board. 0.22 iFdecoupling

Contextual Info: HVM5 THRU FORWARD INTERNATIONAL ELECTRONICS LTD. SEMICONDUCTOR TECHNICAL DATA HVM16 TE C H N IC A L S P E C IF IC A T IO N S O F H IG H VOLTAGE A S S E M B L IE D R E C T IF IE R VOLTAGE RANGE - 5000 to 16000 Volts CURRENT 0.35 Ampere - FEATURES ' Low co st

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Abstract: HVM12
Contextual Info: HIGH VOLTAGE ASSEMBLIED RECTIFIERS 0.35 AMPERE TO 0.75 AMPERE 5K VOLTS TO 16K VOLTS S\ ^ - - ^ P R V IV \ T Y P E N O ''''- '- 5KV 8KV 10KV 12KV 14KV 15KV 16KV CASE lolA) \ 0.35 HVM5 HVM8 HVM10 HVM12 HVM14 HVM15 HVM16 HVM 0.75 HVP5 HVP8 HVP10 HVP12 HVP14

HY5117804

Contextual Info: •HYUNDAI HYM5V64414A F-Series 4M x 64-bit CMOS DRAM MODULE Unbuffered with EXTENDED DATA OUT DESCRIPTION The HVM5V64414A is a 4M x 64-bit EDO mode CMOS DRAM m odule consisting of sixteen HY51V17804B in 28.28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. O .luF and 0.01 mF

HVM12 350

Abstract: HVM12 HVM10 HVM14 HVM15 HVM16
Contextual Info: HVM5 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HVM16 HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes FEATURES * * * * * * Low cost Low leakage Isolated case Surge overload rating - 50 amperes peak Mounting position: Any

Contextual Info: HVM5 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HVM16 HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes FEATURES * * * * * * Low cost Low leakage Isolated case Surge overload rating - 50 amperes peak Mounting position: Any

HVM10

Abstract: diode HVM12 HVM15 HVM12 HVM14 HVM16 HVP10 HVP12 HVP14 HVP16
Contextual Info: LESHAN RADIO COMPANY, LTD. HVM5 – HVM16 HVP5 – HVP16 HIGH – VOLTAGE DIODES MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase,half wave, 60Hz,resistive or inductive load. For capacitive load,derate current by 20%.

HVM12 350

Abstract: HVM12 diode HVM12 HVM12 diode IAV350 HVM5-HVM12 high voltage rectifier diode HVM10 Master Instrument
Contextual Info: MASTER INSTRUMENT CORPORATION HIGH VOLTAGE SILICON RECTIFIER HVM5-HVM12 VOLTAGE RANGE Forward Current 5000 to 12000 Volts 0.3-0.5 Amperes FEATURES l Low leakage l High surge capability l High current capability l High temperature soldering guaranteed: 200 oC/10 seconds, 0.375” 9.5mm lead length at 5 lbs.

Contextual Info: •HYUNDAI HYM536A414B M-Series 4M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HVM536A414B is a 4M x 36-bit EDO mode CMOS DRAM module consisting of nine HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF decoupling capacitor is mounted for each

HYM5641

Contextual Info: •HYUNDAI HYM564100 N-Series IM X 64-bit CMOS DRAM MODULE DESCRIPTION The HVM564100 is a 1 M x 64-bit Fast page m ode CMOS DRAM m odule consisting of sixteen HY514400Ain 20/26 pin SOJ o r TSOP-II and tw o 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board.

HVM20L

Abstract: HVM15L hvm8
Contextual Info: HVM5L RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HVM20L HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE RANGE 5000 to 20000 Volts CURRENT 0.35 Amperes FEATURES * * * * * * Low cost Low leakage Isolated case Surge overload rating - 50 amperes peak Mounting position: Any

diode HVM12

Abstract: HVM15 HVM10 HVM12 HVM14 HVM16 HVM12 350
Contextual Info: HVM5 DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS HVM16 TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE RANGE - 5000 to 16000 Volts CURRENT - 0.35 Ampere FEATURES * * * * Low cost Low leakage Isolated case Surge overload rating - 50 amperes peak

HVM10

Abstract: HVM15 HVM16 135CC
Contextual Info: HVM5 THRU SEMICONDUCTOR TECHNICAL DATA FORWARD INTBENATIONAL ELECIBONICS LID . HVM16 TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE HANGE - 5000 to 16000 Volts CURRENT - 0.35 Ampere FEATURES ' Low cost ' Low le a k a g e * Is o la te d c a s e

HVM16

Contextual Info: HVM5 ERECTROM m m SEMICONDUCTOR THRU TECHNICAL SPECIFICATION HVM 16 HIGH VOLTAGE ASSEMBLED RECTIFIER VOLTAGE RANGE-5000 to 16000 Volts CURRENT-0.35 Amperes FEATURES * Low cost * Low leakage * Isolated case * Surge overload rating — 5 0 amperes peak * M ounting position: A ny

HVM16L

Abstract: HVM15L
Contextual Info: HVM5L RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HVM16L HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes FEATURES * * * * * * Low cost Low leakage Isolated case Surge overload rating - 50 amperes peak Mounting position: Any

Contextual Info: -« Y U N D ftl • HYM5V72A804 F-Series Unbuffered 8Mx72 bit CMOS DRAM MODULE based on 8Mx8 DRAM, EDO, ECC, 4K/8K-Refresh DESCRIPTION The HVM5V72A804 is a 8M x 72-bit EDO mode CMOS DRAM module consisting of nine 8Mx8 SOJ or TSOP and one 2048-bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1nF and 0.01 (aF decoupling

Contextual Info: "HYUNDAI HYM532220A W-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mourtted for

2x062h

Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1

Contextual Info: R oH S C om plian t HIGH VOLTAGE RECTIFIERS PLASTIC MATERIAL HAS UL 94V-0 CLASSIFICATION o o OPERATING AND STORAGE TEMPERATURE -55 C to +150 C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum

Contextual Info: “ H Y U N D A I H Y M 5 V 3 2 4 0 4 A N - S e r ie s 4M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM5V32404A is a 4M x 32-bit EDO mode CMOS DRAM Module consisting of eight HY51V16404A in 24/26 pin TSOPII on a 72 pin Zig Zag Dual tabs glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is

Contextual Info: HIGH VOLTAGE RECTIFIERS PLASTIC MATERIAL USED CARRIES UL 94V-0 OPERATING AND STORAGE TEMPERATURE -65 "C to +175 °C _it^ .j'ii6jS if TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum Forward Peak

HYM532224A

Abstract: AS-002 AO HY5118164
Contextual Info: -HYUNDAI HYM532224A W-Series 2M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM 532224Ais a 2M x 32-bit EDO m ode CMOS DRAM m odule consisting of four HY5118164B in 42/42 pin SOJ or 44.50 pin TSOPII on a 72 pin glass-epoxy printed circuit board. Two 0.01 pF decoupling capacitors are