HVM12 Search Results

Hitachi DSA001653

Contextual Info: HVM121WK Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ADE-208-042C Z Preliminary, Rev. 3 Jun. 1993 Features • Low capacitance. (C = 0.7pFmax) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information

610D

Abstract: 610F HSM112WK HSM113WK HSM124S HSM221C HSM223C HSM402S HSM402WK
Contextual Info: - 158- m. HSM112WK HSM113WK HSM123 HSM124S HSM221C HSH223C HSM402S HSM402WK HSM2692 HSM2S93A HSM2694 HSM2836C HSM2838C HSS81 HSS82 HSS83 HSS104 HSS271 HSS400J HSS401J HSS402J HSU277 HV-03SS HV-06SS HŸ-08 HV-08SS HVM14 HVM14S HVM14SR HVM121ÏK HVT-15SS HVT-20SS

IR1 DIODE

Contextual Info: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC131 HVC132 HVC133 HVM121WK HVM131S HVM131SR HVM132 HVM132WK HVM14 HVM14S HVM14SR HVM187S HVM187WK HVU131 HVU132 HVU133 HVU187 HVC200A HVC202A HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 HVC355B

lola

Abstract: HVM12
Contextual Info: HIGH VOLTAGE ASSEMBLIED RECTIFIERS 0.35 AMPERE TO 0.75 AMPERE 5K VOLTS TO 16K VOLTS S\ ^ - - ^ P R V IV \ T Y P E N O ''''- '- 5KV 8KV 10KV 12KV 14KV 15KV 16KV CASE lolA) \ 0.35 HVM5 HVM8 HVM10 HVM12 HVM14 HVM15 HVM16 HVM 0.75 HVP5 HVP8 HVP10 HVP12 HVP14

transistor mark code H1

Abstract: transistor mark code H7 Variable Capacitance Diode HVR100 mark CA MARK CODE N1 rf transistor mark code H1 HVB14S HVC131 HVC132
Contextual Info: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC200A HVC202A HVC202B HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 HVC355B HVC357 HVC358B HVC359 HVC362 HVC363A HVC365 HVC369B HVC372B HVC374B HVC131 HVC132 HVC133 HVC134 HVM121WK HVM131S HVM131SR

RG301

Contextual Info: HVM12L HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE RANGE 12000 Volts CURRENT 0.35 Amperes FEATURES * * * * * * Low cost Low leakage Isolated case Surge overload rating - 50 amperes peak Mounting position: Any Low forward voltage drop HVML MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

HVT-25SS

Abstract: HSM402S 610D 610F HSM112WK HSM113WK HSM124S HSM221C HSM223C HSM402WK
Contextual Info: - 158- m. HSM112WK HSM113WK HSM123 HSM124S HSM221C HSH223C HSM402S HSM402WK HSM2692 HSM2S93A HSM2694 HSM2836C HSM2838C HSS81 HSS82 HSS83 HSS104 HSS271 HSS400J HSS401J HSS402J HSU277 HV-03SS HV-06SS HŸ-08 HV-08SS HVM14 HVM14S HVM14SR HVM121ÏK HVT-15SS HVT-20SS

HVM12 350

Abstract: HVM12 diode HVM12 HVM12 diode IAV350 HVM5-HVM12 high voltage rectifier diode HVM10 Master Instrument
Contextual Info: MASTER INSTRUMENT CORPORATION HIGH VOLTAGE SILICON RECTIFIER HVM5-HVM12 VOLTAGE RANGE Forward Current 5000 to 12000 Volts 0.3-0.5 Amperes FEATURES l Low leakage l High surge capability l High current capability l High temperature soldering guaranteed: 200 oC/10 seconds, 0.375” 9.5mm lead length at 5 lbs.

Contextual Info: HITACHI AOE-208-042C Z HVM121WK Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator Preliminary Rev. 3 Jun. 1993 HITACHI Features Pin Arrangement • Low capacitance. (C= 0.7pF max) • M PAK p ack ag e is su itab le for h igh density surface mounting and high speed assembly.

HVM16L

Abstract: HVM12
Contextual Info: HIGH VOLTAGE RECTIFIERS Io A PACKAGE \ 0.35 0.35 0.75 HVM-L HVM HVP —1.2 O U T L IN E V m m /T y p .) 18.5 V rrm \ (V o lts) J 1 a 4 40 H e 1 h 7 .0 \ 1 h - M . . HVM8L HVM8 HVP8 10000 HVM10L HVM 10 HVP10 12000 HVM12L HVM 12 HVP 12 14000 HVM14L HVM 14

HVT-30SS

Abstract: 610D 610F HSM112WK HSM113WK HSM124S HSM221C HSM223C HSM402S HSM402WK
Contextual Info: - 158- m. HSM112WK HSM113WK HSM123 HSM124S HSM221C HSH223C HSM402S HSM402WK HSM2692 HSM2S93A HSM2694 HSM2836C HSM2838C HSS81 HSS82 HSS83 HSS104 HSS271 HSS400J HSS401J HSS402J HSU277 HV-03SS HV-06SS HŸ-08 HV-08SS HVM14 HVM14S HVM14SR HVM121ÏK HVT-15SS HVT-20SS

HVM121WK

Abstract: SC-59A Hitachi DSA00313
Contextual Info: ADE-208-042C Z HVM121WK Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator Preliminary Rev. 3 Jun. 1993 Features Pin Arrangement • Low capacitance. (C= 0.7pF max) • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HVM121WK Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator HITACHI ADE-208-042C Z Preliminary, Rev. 3 Jun. 1993 Features • Low capacitance. (C = 0.7pFmax) • MPAK package is suitable for high density surface mounting and high speed assembly.

HSM402S

Abstract: 610D 610F HSM112WK HSM113WK HSM124S HSM221C HSM223C HSM402WK LS53
Contextual Info: - 158- m. HSM112WK HSM113WK HSM123 HSM124S HSM221C HSH223C HSM402S HSM402WK HSM2692 HSM2S93A HSM2694 HSM2836C HSM2838C HSS81 HSS82 HSS83 HSS104 HSS271 HSS400J HSS401J HSS402J HSU277 HV-03SS HV-06SS HŸ-08 HV-08SS HVM14 HVM14S HVM14SR HVM121ÏK HVT-15SS HVT-20SS

2x062h

Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1

Contextual Info: R oH S C om plian t HIGH VOLTAGE RECTIFIERS PLASTIC MATERIAL HAS UL 94V-0 CLASSIFICATION o o OPERATING AND STORAGE TEMPERATURE -55 C to +150 C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum

501c1

Contextual Info: ISDN SO DIL Interface Modules Features • excellent output characteristics ensures compliance with CCITT.I.430 pulse waveform template when used with recommended IC pairing • excellent and consistent balance between windings • operating temperature: 0 to 70°C

HVM12

Abstract: HVM15
Contextual Info: HVM5 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HVM16 HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes FEATURES * * * * * * Low cost Low leakage Isolated case Surge overload rating - 50 amperes peak Mounting position: Any

HVM12 350

Abstract: HVM12 HVM10 diode HVM12 HVM15 HVM14 HVM16
Contextual Info: HVM5 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HVM16 HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes FEATURES * * * * * * Low cost Low leakage Isolated case Surge overload rating - 50 amperes peak Mounting position: Any

Contextual Info: HIGH VOLTAGE RECTIFIERS PLASTIC MATERIAL USED CARRIES UL 94V-0 OPERATING AND STORAGE TEMPERATURE -65 "C to +175 °C _it^ .j'ii6jS if TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum Forward Peak

Contextual Info: HVM5 THRU FORWARD INTERNATIONAL ELECTRONICS LTD. SEMICONDUCTOR TECHNICAL DATA HVM16 TE C H N IC A L S P E C IF IC A T IO N S O F H IG H VOLTAGE A S S E M B L IE D R E C T IF IE R VOLTAGE RANGE - 5000 to 16000 Volts CURRENT 0.35 Ampere - FEATURES ' Low co st

Solitron J775-2

Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
Contextual Info: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188

HVM12 350

Abstract: HVM12 HVM10 HVM14 HVM15 HVM16
Contextual Info: HVM5 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HVM16 HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes FEATURES * * * * * * Low cost Low leakage Isolated case Surge overload rating - 50 amperes peak Mounting position: Any

Contextual Info: HVM* Features Controlled avalanche characteristic combined with the ability to dissipate reverse power Plastic package has underwriters laboratory lammability classification 94V-0 Low forward voltage drop Typical ir less than 1 eA High overload surge capability