HSD88 Search Results

HSD882S

Abstract: HSD882
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6544 Issued Date : 1992.11.25 Revised Date : 2002.01.25 Page No. : 1/4 HSD882S NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver.

HSD88

Abstract: PUSF0002ZB-A
Contextual Info: HSD88 Silicon Schottky Barrier Diode for Detector, Mixer REJ03G0602-0100 Previous: ADE-208-1386 Rev.1.00 Apr 26, 2005 Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage. • Super small Flat Lead Package (SFP) is suitable for surface mount design.

HSD88

Abstract: DSA003640
Contextual Info: HSD88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-1386 Z Rev.0 Jun. 2001 Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage. • Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information

Contextual Info: HSD88 Silicon Schottky Barrier Diode for Detector, Mixer REJ03G0602-0100 Previous: ADE-208-1386 Rev.1.00 Apr 26, 2005 Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage. • Super small Flat Lead Package (SFP) is suitable for surface mount design.

HSD882

Contextual Info: HI-SINCERITY Spec. No. : HE6004 Issued Date : 1998.03.15 Revised Date : 2005.08.15 Page No. : 1/5 MICROELECTRONICS CORP. HSD882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD882 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver.

HSD882S

Contextual Info: HI-SINCERITY Spec. No. : HE6544 Issued Date : 1992.11.25 Revised Date : 2005.01.04 Page No. : 1/5 MICROELECTRONICS CORP. HSD882S NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver.

transistor tl 187

Abstract: transistor D 882 p HSD882 IC tl 074
Contextual Info: HI-SINCERITY Spec. No. : HE6004 Issued Date : 1998.03.15 Revised Date : 2005.01.06 Page No. : 1/5 MICROELECTRONICS CORP. HSD882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD882 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver.

HSD882S

Contextual Info: HI-SINCERITY Spec. No. : HE6544 Issued Date : 1992.11.25 Revised Date : 2006.07.28 Page No. : 1/5 MICROELECTRONICS CORP. HSD882S NPN Epitaxial Planar Transistor Description The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay

HSD882S

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6544 Issued Date : 1992.11.25 Revised Date : 2003.08.12 Page No. : 1/4 HSD882S NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver.

HSD880

Abstract: SD880
Contextual Info: HI-SINCERITY Spec. No. : HE6729 Issued Date : 1992.11.25 Revised Date : 2004.11.19 Page No. : 1/4 MICROELECTRONICS CORP. HSD880 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD880 is designed for low frequency power amplifier applications. TO-220 Features

O125C

Abstract: HSD882
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6004 Issued Date : 1998.03.15 Revised Date : 2002.01.25 Page No. : 1/4 HSD882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD882 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver.

HSD882

Abstract: O125C
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6004 Issued Date : 1998.03.15 Revised Date : 2003.09.10 Page No. : 1/4 HSD882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD882 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver.

HSD880

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6729-B Issued Date : 1992.11.25 Revised Date : 1999.08.01 Page No. : 1/3 HSD880 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD880 is designed for low frequency power amplifier applications. Features • High DC Current Gain

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

HSD88

Abstract: PUSF0002ZB-A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

mn2510

Abstract: 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference"
Contextual Info: Low voltage power bipolar transistors Selection guide October 2007 www.st.com/bipolar SOT-223 Part number NPN PNP STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 2STN1360 2STN2360 STN1802 STN851 STN951* STN715 STN817A IC [A] VCE [V] VCE sat @

B55QS03

Abstract: it8282m ATI SB460 AMD Athlon 64 X2 pin diagram STP80 b55qs SB460/600
Contextual Info: 5 D C B 1 Cover Page 2 Block Diagram 3 Clock Generator 4 Power CPU Vcore , Intersil 6566(DCR Sense) 5 Power A(DC to DC) 6 Power B(DC to DC),PWR sequence&good 7 K8 - M2 CPU (HT) D 8 K8 - M2 CPU (MEM) A 9 K8 - M2 CPU (CTRL) B,C 10 K8 - M2 CPU (POWER,GND) E,F,G,H

r61505

Abstract: R63400 R61506 R61504 R61501 NS953 Niigata Seimitsu ns953 ic data r61503 Niigata Seimitsu 04BZ
Contextual Info: Rev.19.00 2007.10.31 Renesas Diodes General Presentation www.renesas.com Renesas Diodes General Presentation October 2007 Standard Product Business Group 10/31/2007 Rev.19.00 2007. Renesas Technology Corp., All rights reserved. Notes regarding these materials

HSD88

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

XL1225 equivalent

Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
Contextual Info: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

RJJ0319DSP

Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?

Ample Communications

Abstract: HVU365 GSM repeater circuit at 400 310 variable capacitance diode HVL400C RKV600KP RKV601KP RKV602KP RKV603KP RKV605KP
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance