HPD431009 Search Results

IC-3237

Abstract: 431009le
Contextual Info: MOS INTEGRATED CIRCUIT HPD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT D e s c rip tio n The ^PD431009 is a high speed, lo w pow er, 1 179 072 bits 131 072 w o rds by 9 bits CMOS static RAM. The /¿PD431009 is packed in 36-pin plastic SOJ. F e a tu re

Contextual Info: SEC ¡j PD431009 131,072 x 9-Bit Static CMOS RAM NEC Electronics Inc. October 1992 Description Pin Configuration The /JPD431009 is a 131,072-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /L/PD431009 a high­

Contextual Info: SEC fiPD431009 131,072 X 9-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The ¿/PD431009 is a 131,072-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /L/PD431009 a high­

IC SRAM 8K X 8

Abstract: MTSC2568 AS7CI64 CY7CI88 7405M dram cross reference CY7C18S 2kx8 sram cross reference AS19F TC55328
Contextual Info: h u lu s in A Industry mss rei ti t n l r Fast SRAM Vendor Cypress Code ASC Code Description Code ASC Code CY7CIÛ06 AS7C1028 25bK*4 HPD4368 AS7C11>4 8K*8 CY7C18S AS7CI64 8Kx8 HPD43258A AS7C256 32K.X8 Vendor Description CY7CI88 AS7C2 59 3:.Kx9 HPD432S9A AS7C259