HP MMIC Search Results

SMD A06 AMPLIFIER

Abstract: MAV-4 MMIC MAR-6 MMIC MAR-3 MAV11 MSA01104 MAV-3 MMIC MAR-1 MAV3 A04 monolithic amplifier
Contextual Info: MINI-CIRCUITS / AVANTEK MONOLITHIC AMPLIFIERS DC TO 8GHz 10GHz Usable MARKING IDENTIFICATION / EQUIVALENT Model Plastic Mini-circuits Equivalent SMD Mini-Circuits Equivalent 83mil HP/Avantek Equivalent Plastic HP/Avantek Equivalent SMD HP/Avantek Other Known

2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM

Abstract: 8 pin IC 34063 44xx INA-10386 HP RF TRANSISTOR GUIDE ATF 26886 2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM Rf detector HSMS 8202 ina series 305xx
Contextual Info: guide HP Wireless Communications Products, Markets Part-to-Market Quick Guide, Version 4.0 Table of Contents Abbreviations of Wireless Terms . i Receivers, Transmitters Receivers . 1

HP MMIC INA

Abstract: mmic distributed amplifier INA-10386 mps 0736 mmic ina MSA-0404 low noise amplifier ghz amplifier TRANSISTOR 12 GHZ MSA-0520 gaas Low Noise Amplifier
Contextual Info: HP RFIC and MMIC Amplifiers Field Values 20-Nov-97 DocPDF DocName Title Subject Author Keywords pdf_docs\amps\00_FRON Hewlett-Packard A Leader in T\I_III.PDF Components Hewlett-Packard A Leader in Components pdf_docs\amps\00_FRON Alphanumeric Index T\VII_XII.PDF

Contextual Info: What mLliM HP AE CWKLAERTDT * Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0600 Features • Cascadable 50 Q. Gain Block • Low Operating Voltage 3.5 V typical Vd • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 19.5 dB Typical at 0.5 GHz

Contextual Info: Thnl HP AECWKLAERTDT mLUM Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0870 Features • Usable Gain to 6.0 GHz • High Gain: 32.5 dB Typical at 0.1 GHz 23.5 dB Typical at 1.0 GHz • Low Noise Figure: 3.0 dB Typical at 1.0 GHz • Hermetic Gold-ceramic

Contextual Info: WO* H EW L E T T WFKÆ PA CK ARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0505 Features Description • Tape-and-Reel Packaging Option Available111 The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f M A X , silicon bipolar MMIC process

Contextual Info: T/,0% mL'HM HP AECWKLAERTDT Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0686 Features • Cascadable 50 Q Gain Block • Low Operating Voltage: 3.5 V Typical Vd • 3 dB Bandwidth: DC to 0.8 GHz • High Gain: 18.5 dB Typical at 0.5 GHz • Low Noise Figure:

AN-G003

Abstract: MGA-641
Contextual Info: MGA-64135 GaAs MMIC as a Variable-Gain Amplifier and Operation at Reduced Vdd Application Note G006 Introduction The HP MGA-64135 GaAs MMIC is a 50 Ω matched gain block providing a nominal 12 dB gain in the 2 to 6 GHz frequency range. Device voltage is 10 volts at

ina series

Abstract: Signal Path Designer AN-S003
Contextual Info: INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process. These devices are 50 ohm

ph9a

Abstract: Ablebond 71-1 60-circuit
Contextual Info:  PH9 Reliability Application Note # 51 - Rev. A MWTC MARKETING March 1997 1.0. Introduction This application note provides a summary of reliability and environmental testing performed to date on 0.25 µm gate length PHEMT processes PH9A and PH9B at HP-MWTC. The

tms 374 chip

Abstract: MSA-0200 MSA-0200-GP4
Contextual Info: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0200 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 2.8 GHz • 12.0 dB Typical Gain at 1.0␣ GHz • Unconditionally Stable k>1 The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX,

Contextual Info: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0300 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 2.8 GHz • 12.0 dB Typical Gain at 1.0 GHz • 10.0 dBm Typical P1 dB at 1.0 GHz The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz fMAX,

INA-03170

Abstract: INA-01170 INA-02170 INA-03 6679 az ina series AN-S003 INA-10386 mmic ina INA-01
Contextual Info: INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process. These devices are 50 ohm

MSA-0335

Abstract: MSA-0235
Contextual Info: WBt mLUMHP AECWKLAERTDT AN-S004 A Broadband IF Amplifier Using MSA-0235 and MSA-0335 This application note describes the design and construction of a 10-1500 MHz, 20 dB gain, +10 dBm amplifier that uses two HP MODAMP MMICs. Such an amplifier could be used either as a general purpose gain block or as an IF

Contextual Info: HWS531 GaAs 0.5-6 GHz SPDT Terminated Switch September 2013 Preliminary Features USON6L 1.5x1.5X0.4 mm • 50Ω Terminated Switch • Low Insertion Loss: 0.70 dB @ 2.7 GHz HP 0.90 dB @ 3.8 GHz 1.10 dB @ 5.8 GHz • Isolation: 31.0 dB @ 2.7 GHz 28.0 dB @ 3.8 GHz

APT POWER FET

Abstract: Avantek Amplifier Avantek amplifier apt-407m402 8266R Avantek APT-
Contextual Info: Thai EWLETT mLEM H PACKARD Avantek Products Thin-Film Wideband Power A m plifiers Selection Guide APT S eries F eatu res D escription Pin C onfiguration • GaAs FET and MIC Reliability For Defense Applications • Com pact D esign s R eplace Bulky TWTs The HP APT Series, GaAs FET

Hp 2564

Abstract: DOD-HDBK-1686
Contextual Info: warn H E W L E T T miCM P A C K A R D Silicon Bipolar RFIC 900 MHz Driver Amplifier Reliability Data HPMX-3002 Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the relevant MIL-STD-883 or HP inter­

transistor rf type M 2530

Abstract: signal path designer INA02170
Contextual Info: f T J I H EW LETT 1WM P A C K A R D INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process.

transistor C1000 USA

Abstract: Transistor D2025 hp_ at41411 AN-S014 D2025 transistor rf cm 1104 MSA-1104 MSA1104 AVANTEK vco Avantek Avantek rf OSCILLATORS
Contextual Info: AN-S014 750-1250 MHz VCO W hpï H EW LETT mLHM P A C K A R D Table 1. VCO Specifications Introduction The design and performance of two low-cost voltage-controlled oscillators VCOs for the 750 to 1250 MHz frequency range, intended for TV downconverter applications, are presented in

Avantek* UTC 524

Abstract: Avantek* UTO Avantek UTC5 Avantek UTC 518 avantek UTO 511 Avantek* UTC 2025 AVANTEK utc10 UTC572 Avantek* UTC-1023 Avantek UTC 519
Contextual Info: W ti3 % H E W L E T T W L'fiM P A C K A R D Avantek Products IF/RF Cascadable Amplifiers Selection Guide UTO Series UTC Series PPA Series Description HP UTO/UTC/PPA cascadable amplifiers are offered in TO-8 packages, TC-1 connectorized cases, and surface-m ount

Contextual Info: HEWLETT-PACKARD/ CMPNTS Thai HEW I-E T T 1"KM blE D • 4 4 4 7 S Ö 4 0 0 1 D 1 2 3 15^ PACKARD 70 mil Package Features • • • • I HP A MSA-0870 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Usable Gain to 6.0 GHz

Contextual Info: TWÜnM h a i HP AEW LETT CKARD Cascadable Silicon Bipolar MMIC Amplifiers Technical Data M SA -0635, -0636 F e a tu r e s • C a sc a d a b le 50 Q. G ain B lo c k • L o w O p e ra tin g V o ltage: 3.5 V Typical Vd • 3 d B B andw idth : DC to 0.9 GHz

KCW-10

Abstract: AuSn solder GaAs MMIC ESD, Die Attach and Bonding Guidelines thermocompression bonder AuSn a/KCW-10
Contextual Info: H GaAs MMIC Assembly and Handling Guidelines Application Note 999 Mechanical Considerations Because of the small size of the devices, handling should always be performed with the aid of a microscope. There are several methods for picking up, transferring and die

nec j142

Abstract: nec J154 j142 nec J243 J119 J154 PDC800M UPC2758TB-e3 UPC2757TB J659
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2757TB, µPC2758TB SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The µPC2757TB and µPC2758TB are silicon monolithic integrated circuit designed as 1st frequency downconverter for cellular/cordless telephone receiver stage.