HONEYWELL MEMORY SRAM Search Results
HONEYWELL MEMORY SRAM Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CY7C167A-35PC |
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CY7C167A - CMOS SRAM |
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27S07ADM/B |
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27S07A - Standard SRAM, 16X4 |
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AM27LS07PC |
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27LS07 - Standard SRAM, 16X4 |
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CDP1823CD/B |
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CDP1823 - 128X8 SRAM |
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27LS07DM/B |
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27LS07 - Standard SRAM, 16X4 |
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HONEYWELL MEMORY SRAM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: D b3E 4551Ö72 DDG1Q1D HONEYWELL/ S MULTICHIP MODULES Honeywell TÖ3 • H 0 N 3 S E C Preliminary 64K X 8 RADIATION-TOLERANT SRAM HC80805 FEATURES RADIATION OTHER • Total Dose Hardness through 1x10s rad Si02 • Spare Memory Chip can be Substituted On-The-Fly |
OCR Scan |
HC80805 1x10s 1x109 1x102upsets/module-day) BADDR11 BARRD10 BDISCRI03 BDISCRI02 BDISCRI01 BADDR21 | |
Contextual Info: Honeywell Preliminary MULTICHIP MODULES HC80805 64K X 8 RADIATION-TOLERANT SRAM FEATURES RADIATION OTHER • Total Dose Hardness through 1x106 rad Si02 • Spare Memory Chip can be Substituted On-The-Fly • Neutron Hardness through 1x1014 crrv2 • Access Time <60 nsec |
OCR Scan |
1x106 1x101 1x109 HC80805 BADDR16 BADDR15 122-lead | |
Contextual Info: Honeywell Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jam Process (Leff = 0.6 ^m) • Total Dose Hardness through 1x106 rad (S i0 2) |
OCR Scan |
HX84050 1x106 1x101 1x109 0GD1755 | |
HXSR06432
Abstract: S150 86-LEAD honeywell memory sram
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HXSR06432 512kx32 150nm 400product 22CFR HXSR06432 S150 86-LEAD honeywell memory sram | |
AVW smdContextual Info: Honeywell Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jim Process (Lett = 0.6 jxm) • Total Dose Hardness through 1x10 rad (S i0 2) |
OCR Scan |
HX84050 1x101 1x109 200-Lead AVW smd | |
HX6228
Abstract: honeywell memory sram
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HX6228 Honeywe-8295 HX6228 honeywell memory sram | |
HLXSR01608Contextual Info: HLXSR01608 HLXSR01608 2M x 8 STATIC RAM 1.5V Core VDD The HLXSR01608 radiation hardened 16Mbit Static proprietary design, layout and process hardening Random Access Memory SRAM is a monolithic techniques. There is no internal EDAC implemented. SRAM fabricated with Honeywell’s 150nm silicon-oninsulator CMOS (S150) technology. The 2M x 8 bit |
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HLXSR01608 HLXSR01608 16Mbit 150nm 110mW 40MHz | |
Contextual Info: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is |
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HX6228 Hone8295 | |
Contextual Info: HLX6256 32K x 8 STATIC RAM—Low Power The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is |
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HLX6256 ADS-14228 | |
Contextual Info: HXSR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low |
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HXSR01632 32-bit 150nm ADS-14154 | |
Contextual Info: HLXSR01608 2M x 8 STATIC RAM The monolithic 2M x 8 Radiation Hardened Static RAM is a high performance 2,097,152 word x 8-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low |
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HLXSR01608 150nm ADS-14218 | |
HXSR01608Contextual Info: HXSR01608 2M x 8 STATIC RAM The monolithic 2M x 8 Radiation Hardened Static RAM is a high performance 2,097,152 word x 8-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low |
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HXSR01608 150nm ADS-14155 HXSR01608 | |
Contextual Info: HLX6228 HLX6228 128K x 8 STATIC RAM—Low Power SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is |
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HLX6228 ADS-14207 | |
HX6408Contextual Info: HRT6408 512K x 8 STATIC RAM The monolithic 512k x 8 Radiation Tolerant Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low |
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HRT6408 150nm ADS-14194 HX6408 | |
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Contextual Info: HLX6256 32K x 8 STATIC RAM The monolithic 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation |
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HLX6256 400mW 40MHz ADS-14228 | |
HLXSR01632Contextual Info: HLXSR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low |
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HLXSR01632 32-bit 150nm ADS-14217 HLXSR01632 | |
Contextual Info: HXSR06432 2M x 32 STATIC RAM The Multi-Chip Module MCM , 2M x 32 Radiation Hardened Static RAM is a high performance 2,097,152 word x 32-bit static random access memory MCM. The SRAM MCM consists of four 512k x 32 SRAM die fabricated with Honeywell’s 150nm silicon-on-insulator CMOS (S150) technology. |
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HXSR06432 32-bit 150nm ADS-14173 | |
Contextual Info: HX6356 32K x 8 STATIC RAM The monolithic 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology. It is QML qualified and is designed for use in systems |
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HX6356 800mW 40MHz ADS-14272 | |
Contextual Info: HX6408 512K x 8 STATIC RAM The monolithic 512K x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology. It is QML qualified and is designed for use in systems |
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HX6408 710mW 40MHz ADS-14132 | |
Contextual Info: HX6256 32K x 8 STATIC RAM The monolithic 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology. It is QML qualified and is designed for use in systems |
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HX6256 600mW 40MHz ADS-14227 | |
Contextual Info: fc.3E D 45S1Ô72 GDD 1 G1 1 H ONEYÙI EL L/ S 11T Honeywell *H0N3 S E C Advance Information 256K X 8 RADIATION-TOLERANT SRAM HC80820 FEATURES RADIATION OTHER • Total Dose Hardness at Tactical Level • Spare Memory Chip can be Substituted On-The-Fly • Soft Error Rate of <1x10 5upsets/bit-day |
OCR Scan |
HC80820 BADDR11 BARRD10 BDISCRI02 BDISCRI01 BADDR21 BADDR20 BADDR19 BADDR18 BADDR17 | |
Contextual Info: Honeywell Military & Space Products 5.12 MEGABIT MEMORY MODULE RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (L#fl = 0.6 |im) • Read/Write Cycle Times <,17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad (Si02) |
OCR Scan |
HX84050 1x106 1x10s 200-Lead | |
Contextual Info: HLX6256 32K x 8 STATIC RAM—Low Power The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industrystandard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in low voltage |
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HLX6256 | |
Contextual Info: HX6228 128K x 8 STATIC RAM The monolithic 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology. It is QML qualified and is designed for use in systems |
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HX6228 1000mW 40MHz ADS-14206 |