HN58S256A Search Results

Hitachi DSA00171

Contextual Info: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry

Hitachi DSAUTAZ005

Contextual Info: HN58S256A Series Package Dimensions HN58S256AT Series TFP-28DB Unit: mm 8.00 8.20 Max 15 1 14 11.80 28 0.55 0.22 ± 0.08 0.10 M 0.20 ± 0.06 0.45 Max 0.80 13.40 ± 0.30 Dimension including the plating thickness Base material dimension 16 +0.07 0.13 –0.08

Contextual Info: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry

Renesas mnos

Abstract: TBL Series HN58S256A HN58S256AT HN58S256AT-15 HN58S256AT-15E HN58S256AT-20 HN58S256AT-20E
Contextual Info: HN58S256A Series 256 k EEPROM 32-kword x 8-bit REJ03C0150-0300Z (Previous ADE-203-692B (Z) Rev.2.0) Rev. 3.00 Feb.26.2004 Description The HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has

HN58S256A

Abstract: HN58S256AT HN58S256AT-15 HN58S256AT-20 Hitachi DSA0047
Contextual Info: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-692A Z Rev. 1.0 Sep. 9, 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology. It also

Hitachi DSA002713

Contextual Info: HN58S256A Series 256 k EEPROM 32-kword x 8-bit ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROMÕs organized as 32768word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology.

Hitachi DSA00164

Contextual Info: HN58S256AI Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-669B Z Rev. 2.0 Sep. 17, 1997 Description The Hitachi HN58S256AI is electrically erasable and programmable ROM organized as 32768-word × 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS

transistor 669A

Abstract: Hitachi DSA00171
Contextual Info: HN58S256AI Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-669A Z Rev. 1.0 May. 20, 1997 Description The Hitachi HN58S256AI is electrically erasable and programmable ROM organized as 32768-word × 8-bit. It has realized high speed, low power consumption and high reliability

Contextual Info: HN58S256AI Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-669B Z Rev. 2.0 Sep. 17, 1997 Description The Hitachi HN58S256AI is electrically erasable and programmable ROM organized as 32768-word x 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS

Hitachi DSAUTAZ006

Contextual Info: HN58S256AI Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-669B Z Rev. 2.0 Sep. 17, 1997 Description The Hitachi HN58S256AI is electrically erasable and programmable ROM organized as 32768-word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS

Hitachi DSAUTAZ005

Contextual Info: HN58S256AI Series Package Dimensions HN58S256ATI Series TFP-28DB Unit: mm 8.00 8.20 Max 15 1 14 11.80 28 0.55 0.22 ± 0.08 0.10 M 0.20 ± 0.06 0.45 Max 0.80 13.40 ± 0.30 Dimension including the plating thickness Base material dimension +0.07 0.13 –0.08

A1015

Contextual Info: HN58S256A Series Ordering Information Type No. Access time Package HN58S256AT-15 HN58S256AT-20 150 ns 200 ns 28-pin plastic TSOP TFP-28DB Pin Arrangement HN58S256AT Series A2 A1 A0 I/O0 I/O1 I/O2 VSS I/O3 I/O4 I/O5 I/O6 I/O7 CE A10 15 16 17 18 19 20 21 22

Contextual Info: HN58S256AI Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-669A Z Rev. 1.0 May. 20,1997 Description The Hitachi HN58S256AI is electrically erasable and programmable ROM organized as 32768-word x 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS

692B

Abstract: HN58S256A HN58S256AT HN58S256AT-15 HN58S256AT-20 Hitachi DSA00358
Contextual Info: HN58S256A Series 256 k EEPROM 32-kword x 8-bit ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry

vco ss

Contextual Info: HN58S256AI Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-669A Z Rev. 1.0 May. 20, 1997 Description The Hitachi HN58S256AI is electrically erasable and programmable ROM organized as 32768-word x 8-bit. It has realized high speed, low power consumption and high reliability

HN58S256ATI-15

Abstract: HN58S256ATI-20 TDL200 Hitachi DSA0047
Contextual Info: HN58S256AI Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-669B Z Rev. 2.0 Sep. 17, 1997 Description The Hitachi HN58S256AI is electrically erasable and programmable ROM organized as 32768-word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS

Hitachi DSAUTAZ006

Contextual Info: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-692A Z Rev. 1.0 Sep. 9, 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology. It also

Contextual Info: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-word x 8-bit employing advanced MNOS memory technology and CMOS process

Contextual Info: HN58S256AI Series Block Diagram to I/O0 VCC I/O7 High voltage generator VSS I/O buffer and input latch OE CE Control logic and timing WE A0 Y gating Y decoder to A5 Address buffer and latch X decoder Memory array A6 to A14 Data latch Operation Table Operation

Contextual Info: HN58S256A Series 256 k EEPROM 32-kword x 8-bit HITACHI ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROMÔs organized as 32768word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology.

A1015

Contextual Info: HN58S256AI Series Ordering Information Type No. Access time Package HN58S256ATI-15 HN58S256ATI-20 150 ns 200 ns 28-pin plastic TSOP TFP-28DB Pin Arrangement HN58S256ATI Series A2 A1 A0 I/O0 I/O1 I/O2 VSS I/O3 I/O4 I/O5 I/O6 I/O7 CE A10 15 16 17 18 19 20

Contextual Info: HN58S256AI Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-669B Z Rev. 2.0 Sep. 17, 1997 Description The Hitachi HN58S256AI is electrically erasable and programmable ROM organized as 32768-word X 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS

HN58S256A

Contextual Info: HN58S256A Series Block Diagram to I/O0 VCC I/O7 High voltage generator VSS I/O buffer and input latch OE CE Control logic and timing WE A0 Y gating Y decoder to A5 Address buffer and latch X decoder Memory array A6 to A14 Data latch Operation Table Operation

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with