R1LV0408C Search Results

R1LV0408C-I

Abstract: R1LV0408CSA-5SI R1LV0408CSA-7LI R1LV0408CSB-5SI R1LV0408CSB-7LI R1LV0408CSP-5SI R1LV0408CSP-7LI
Contextual Info: R1LV0408C-I Series Wide Temperature Range Version 4M SRAM 512-kword x 8-bit REJ03C0098-0200Z Rev. 2.00 May.25.2004 Description The R1LV0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LV0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process

Contextual Info: R1LV0408C-I Series Wide Temperature Range Version 4 M SRAM 512-kword x 8-bit REJ03C0098-0100Z Rev. 1.00 Jul.24.2003 Description The R1LV0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LV0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process

R1LV0408CSP-5SC

Abstract: r1lv0408c R1LV0408C-C R1LV0408CSA-5SC R1LV0408CSA-7LC R1LV0408CSB-5SC R1LV0408CSB-7LC R1LV0408CSP-7LC
Contextual Info: R1LV0408C-C Series 4M SRAM 512-kword x 8-bit REJ03C0099-0200Z Rev. 2.00 May.25.2004 Description The R1LV0408C-C is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LV0408C-C Series has realized higher density, higher performance and low power consumption by employing CMOS process

R1LV0408C-C

Contextual Info: R1LV0408C-C Series 4 M SRAM 512-kword x 8-bit REJ03C0099-0100Z Rev. 1.00 Jul.24.2003 Description The R1LV0408C-C is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LV0408C-C Series has realized higher density, higher performance and low power consumption by employing CMOS process

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

HM2V8100TTI5SE

Abstract: HM216514TTI5SE M5M51008DFP-70HIST HM216514 M5M51008DFP-55HIBT hm28100tti5se R1LV1616HSA-4SI M5M51008DFP-70HI M5M5V108DVP-70HIST R1LV0408DSP-5SI
Contextual Info: LPSRAM Part Number Guide Density Configuration 256K 32k x8 Voltage 3.0-3.6 & 4.5-5.5V Package SOP28 TSOP28 4.5-5.5V SOP28 Speed 70ns 70ns 55ns 70ns TSOP28 55ns 70ns 1M 128k x8 2.7-3.6V SOP32 TSOP32 sTSOP32 4.5-5.5V SOP32 70ns 70ns 70ns 55ns 70ns TSOP32 55ns

K6X0808C1D-BF55

Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
Contextual Info: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI

TC554161A

Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA

HM628100

Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
Contextual Info: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA

K6X8016T3B-UF55

Abstract: K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70
Contextual Info: SRA SRAM mories RENESAS Low Power SRAM Roadmap Density LOW 2005 2006 256 KB x8 0.6 µm 1MB x8 0.25 µm 2 MB x8 / x16 0.25 µm 4 MB Middle 8 MB Large 2007 0.18 µm 2008 Status • Stable support x8 / x16 0.15 µm Advanced LPSRAM Vcc = 3.3V ver. x8 / x16 0.18 µm

TC55VEM416AXBN

Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA

R1LV0408CSP-5SC

Abstract: r1lv0408c R1LV0408CSB-7LC R1LV0408C-C R1LV0408CSA-5SC R1LV0408CSA-7LC R1LV0408CSB-5SC R1LV0408CSP-7LC
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

R1LV0408C-I

Abstract: r1lv0408c R1LV0408CSA-5SI R1LV0408CSA-7LI R1LV0408CSB-5SI R1LV0408CSB-7LI R1LV0408CSP-5SI R1LV0408CSP-7LI
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

DSTINIs400

Abstract: 2N7002 AM29LV081B-70EC BAT54S BSS84 CR1632 DS80C400 DS80C410 DS80C410-FNY R1LV0408CSB-7LC
Contextual Info: DSTINIm410 Networked Micro Evaluation Board www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DSTINIm410 is a fully assembled and tested circuit board that evaluates the DS80C410 network microcontroller. In addition to the DS80C410, the DSTINIm410 includes a real-time clock, 1MB flash,

Contextual Info: AN1012 Application note Predicting the battery life and data retention period of NVRAMs and serial RTCs Introduction Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their

M5M5256DFP-70LL*bm

Abstract: HM2V8100TTI5SE R1LV1616HSA-4SI HM216514TTI5SE M5M5V108DVP-70HIBT M5M5V108DVP M5M5256DFP-70LLISM M5M5W816TP-55HI R1LP0408CSP-7LC M5M51008DFP-70HI
Contextual Info: LPSRAM Part Number Guide Density 256K Configuration 32k x8 Voltage Package 3.0-3.6 & 4.5-5.5V SOP28 Speed 70ns Temp Range Catalog / Data Sheet Part Number 0 ~ 70'C. M5M5256DFP-70G 0 ~ 70'C. M5M5256DFP-70XG -40 ~ 85'C M5M5256DFP-70GI TSOP28 4.5-5.5V SOP28 70ns

K6X8008T2B-UF55

Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety
Contextual Info: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,

14.7456MHz crystal

Abstract: TINI400 BSS84 1Mb static ram an612 DSTINIs400 2N7002 AM29LV081B-70EC BAT54S DS80C400
Contextual Info: DSTINIm400 Networked Microcontroller Evaluation Board www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DSTINIm400# is a fully assembled and tested circuit board that evaluates the DS80C400 network microcontroller. In addition to the DS80C400, the DSTINIm400# includes a real-time clock, 1MB flash,