HM6709 Search Results

Contextual Info: HM6709A Series — Prelim inary 65536-Word x 4-Bit High Speed Static RAM • FEATURES • • • • • 65536-words x 4 bit organization Fully TTL compatible input and output 1.0^m Hi-BiCMOS process + 5V single supply Completely static memory No clock or timing strobe required

Contextual Info: HM6709 Series 65536-word x 4-bit High Speed Hi-BiCMOS Static RAM The HM6709 Series has been converted to the HM6709A Series. The new A Series is com­ pletely compatible with the non-A Series. Please refer to the specification comparison below to assist in your conversion.

Contextual Info: HM6709SH Series -P re lim in a ry 65,536-words x 4-Bit High Speed Static Random Access Memory I FEATURES 65,536-words x 4 bit organization Directly TTL compatible input and output 0.8 nm Hi-BiCMOS process +5V single supply Completely static memory No clock or timing strobe

Contextual Info: HM6709SH Series- Preliminary 65,536-words x 4-Bit High Speed Static Random Access Memory • FEATURES • • • • • • • • 65,536-words x 4 bit organization Directly TTL compatible input and output 0.8 |im Hi-BiCMOS process

HM6709AJP-15

Abstract: HM6709AJP-20
Contextual Info: HM6709A Series 65536-word x 4-bit High Speed Static Random Access Memory Features 65536-words × 4 bit organization Fully TTL compatible input and output 1.0 µm Hi-BiCMOS process +5 V single supply Completely static memory No clock or timing strobe required

Hb203

Contextual Info: HITACHI/ LOGIC/ARRAYS/MEM S1E D 44^203 GGlfiOOV 0 7 5 • HM6709A S e rie s - • Preliminary W6 65536-Word x 4-Blt High Speed Static RAM - 2 3 ■ FEATURES • 65536-words x 4 bit organization • Fully TTL compatible input and output • 1.0/tm Hi-BiCMOS process

DP-28N

Contextual Info: HM6709A Series — •P relim inary 65536-Word x 4-Bit High Speed Static RAM ■ • • • • • FEATURES 65536-words x 4 bit organization Fully TTL compatible input and output 1.0/im Hi-BiCMOS process + 5V single supply Completely static memory No clock or timing strobe required

S2VC

Abstract: 6708S
Contextual Info: HM6708SH/HM6709SH Series TTL I/O 65,536-words x 4-blts High Speed Static Random Access Memory Features Pin Arrangement • • • • • 65,536 words x 4 bits organization Fully compatible with TTL input and output 0.8 |im Hi-BiCMOS process +5 V single power supply

Contextual Info: HM6708SH/HM6709SH Series TTL I/O 65,536-words x 4-bits High Speed Static Random Access Memory F eatures Pin A rrangem ent • 6 5 ,5 3 6 words x 4 bits organization H M 6 7 0 8 S H Series • F u lly com patible w ith T T L input and output • 0 .8 p m H i-B iC M O S process

B503 F 30

Contextual Info: blE D • 44^203 D 0 2 D T D 3 235 ■ HIT2 HM6709A Series Hitachi/ locic/ arrays/ mek 65536-word x 4-bit High Speed Static Random Access Memory 4, ~ £.3 - \<£ Pin Arrangement Features • • • • • 65536-words x 4 bit organization Fully 'IT l compatible input and output

Contextual Info: HM6709 Series 65536-word x 4-bit High Speed Hi-BiCMOS Static RAM The HM6709 Series has been converted to the HM6709A Series. The new A Series is com­ pletely compatible with the non-A Series. Please refer to the specification comparison below to assist in your conversion.

Contextual Info: HM6708SH/HM6709SH S e rie s- TTL I/O 65,536-words x 4-bits High Speed Static Random Access Memory Features Pin Arrangement • • • • • 65,536 words x 4 bits organization Fully compatible with TT L input and output 0.8 |im Hi-BiCMOS process +5 V single power supply

Contextual Info: HITACHI/ L06IC/ARRÂYS/MEM SIE D 4 4^ 3 203 OOlflOlM EOE I HM6709SH Series- HITE -Preliminary 65,536-words x 4-Bit High Speed Static Random Access Memory • • • • • • • • • FEATURES 65,536-words x 4 bit organization

HM6708SH

Abstract: HM6708SHJP-10 HM6708SHJP-12 HM6709SH HM6709SHJP-10 HM6709SHJP-12
Contextual Info: HM6708SH/HM6709SH S e rie s - TTL I/O 65,536-words x 4-bits High Speed Static Random Access Memory Features Pin Arrangement « • • • • 65,536 words x 4 bits organization Fully compatible with TTL input and output 0.8 |im Hi-BiCMOS process +5 V single power supply

Contextual Info: HM6708SH/HM6709SH Series— TTL I/O 65,536-words x 4-bits High Speed Static Random Access Memory Features Pin Arrangement • • • • • 65,536 words x 4 bits organization Fully compatible with TTL input and output 0.8 Jim Hi-BiCMOS process +5 V single power supply

HM6709SHJP-12

Abstract: HM6708SH HM6708SHJP-10 HM6708SHJP-12 HM6709SH HM6709SHJP-10
Contextual Info: HM6708SH/HM6709SH Series 65,536-words x 4-bits High Speed Static Random Access Memory Features Pin Arrangement 65,536 words × 4 bits organization Fully compatible with TTL input and output 0.8 µm Hi-BiCMOS process +5 V single power supply Completely static memory: No clock or timing

HM6709AJP-15

Abstract: HM6709AJP-20
Contextual Info: HM6709A Series 65536-word x 4-bit High Speed Static Random Access Memory Features Pm • • • • • 65536-words x 4 bit organization Fully TTL compatible input and output 1.0 imHi-BiCMOS process +5 V single supply Completely static memory No clock or timing strobe required

Contextual Info: HM6709A Series Product Preview 65536-W ord x 4-Bit High Speed Static RAM with OE • FEATURES • Super Fast Access T im e . 15/20/25ns (max.) • Fast OE Access Tim e. 8/10/10ns (max.)

MMT-20

Contextual Info: HITACHI/ LOGIC/ARRAYS/MEM S1E 441fa203 G 0 1 b 4 ô 0 HM6709 S fi©S — Preliminary T -4 6 -2 3 -1 0 65536-Word x 4-Bit High Speed Static RAM with OE • FEATURES • Super Fast Access Tim e. , . • Fast OE Access T im e

HM6709AJP-20

Abstract: HM6709SHJP-10 KM64258B-25 KM64259B-15 KMB4259B-20 KMB4259B-25 Hitachi Scans-001
Contextual Info: 2 5 6 K B iC M O S X m £ a £ CC TAAC max ns) TCAC max (ns) 4 -y TOE max (ns) TOH min (ns) * y TOD max (ns) S t a t i c ? TWP min (ns) ft RAM (65, & TDS 536x4) m "ns) TDH min (ns) TWD min (ns) TWH max (ns) V D D or V C C (V) 2 8 P I N X m I DP max (mA)

acs 08 5s

Contextual Info: H M 6 7 0 9 S 6 r Ì G S — Preliminary 65536-Word x 4-Bit High Speed Static RAM with ÜE • FEATURES • Super Fast Access Tim e. • Fast 5 E Access T im e . • Low Power Dissipation.

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

HM6287HL-35

Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
Contextual Info: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j