HM6709SH Search Results

Contextual Info: HM6709SH Series -P re lim in a ry 65,536-words x 4-Bit High Speed Static Random Access Memory I FEATURES 65,536-words x 4 bit organization Directly TTL compatible input and output 0.8 nm Hi-BiCMOS process +5V single supply Completely static memory No clock or timing strobe

Contextual Info: HM6709SH Series- Preliminary 65,536-words x 4-Bit High Speed Static Random Access Memory • FEATURES • • • • • • • • 65,536-words x 4 bit organization Directly TTL compatible input and output 0.8 |im Hi-BiCMOS process

S2VC

Abstract: 6708S
Contextual Info: HM6708SH/HM6709SH Series TTL I/O 65,536-words x 4-blts High Speed Static Random Access Memory Features Pin Arrangement • • • • • 65,536 words x 4 bits organization Fully compatible with TTL input and output 0.8 |im Hi-BiCMOS process +5 V single power supply

Contextual Info: HM6708SH/HM6709SH Series TTL I/O 65,536-words x 4-bits High Speed Static Random Access Memory F eatures Pin A rrangem ent • 6 5 ,5 3 6 words x 4 bits organization H M 6 7 0 8 S H Series • F u lly com patible w ith T T L input and output • 0 .8 p m H i-B iC M O S process

Contextual Info: HM6708SH/HM6709SH S e rie s- TTL I/O 65,536-words x 4-bits High Speed Static Random Access Memory Features Pin Arrangement • • • • • 65,536 words x 4 bits organization Fully compatible with TT L input and output 0.8 |im Hi-BiCMOS process +5 V single power supply

Contextual Info: HITACHI/ L06IC/ARRÂYS/MEM SIE D 4 4^ 3 203 OOlflOlM EOE I HM6709SH Series- HITE -Preliminary 65,536-words x 4-Bit High Speed Static Random Access Memory • • • • • • • • • FEATURES 65,536-words x 4 bit organization

HM6708SH

Abstract: HM6708SHJP-10 HM6708SHJP-12 HM6709SH HM6709SHJP-10 HM6709SHJP-12
Contextual Info: HM6708SH/HM6709SH S e rie s - TTL I/O 65,536-words x 4-bits High Speed Static Random Access Memory Features Pin Arrangement « • • • • 65,536 words x 4 bits organization Fully compatible with TTL input and output 0.8 |im Hi-BiCMOS process +5 V single power supply

Contextual Info: HM6708SH/HM6709SH S e rie s - TTL I/O 65,536-words x 4-bits High Speed Static Random Access Memory Features Pin Arrangement « • • • • 65,536 words x 4 bits organization Fully compatible with TTL input and output 0.8 |im Hi-BiCMOS process +5 V single power supply

Contextual Info: HM6708SH/HM6709SH Series— TTL I/O 65,536-words x 4-bits High Speed Static Random Access Memory Features Pin Arrangement • • • • • 65,536 words x 4 bits organization Fully compatible with TTL input and output 0.8 Jim Hi-BiCMOS process +5 V single power supply

HM6709SHJP-12

Abstract: HM6708SH HM6708SHJP-10 HM6708SHJP-12 HM6709SH HM6709SHJP-10
Contextual Info: HM6708SH/HM6709SH Series 65,536-words x 4-bits High Speed Static Random Access Memory Features Pin Arrangement 65,536 words × 4 bits organization Fully compatible with TTL input and output 0.8 µm Hi-BiCMOS process +5 V single power supply Completely static memory: No clock or timing

HM6709AJP-20

Abstract: HM6709SHJP-10 KM64258B-25 KM64259B-15 KMB4259B-20 KMB4259B-25 Hitachi Scans-001
Contextual Info: 2 5 6 K B iC M O S X m £ a £ CC TAAC max ns) TCAC max (ns) 4 -y TOE max (ns) TOH min (ns) * y TOD max (ns) S t a t i c ? TWP min (ns) ft RAM (65, & TDS 536x4) m "ns) TDH min (ns) TWD min (ns) TWH max (ns) V D D or V C C (V) 2 8 P I N X m I DP max (mA)

HM6287HL-35

Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
Contextual Info: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM

DATA SHEET OF IC 317

Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
Contextual Info: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,

4096 RAM

Abstract: 8 bit memory ic 16 BIT WORD STATIC RAM "Video RAM" 524,288 9bit HM658512 DYNAMIC RAM 16384-WORD HM628512 RAM HM63021
Contextual Info: CONTENTS • Quick Reference Guide to Hitachi IC Memories . 7 • MOS RAM.

62256 hitachi

Abstract: 28 pin plastic dip hitachi dimension hitachi PLC
Contextual Info: Reliability of Hitachi 1C Memories 1. Structure The dies of IC memories are encapsulated in various packages. The most common packages are plastic and cerdip. Plastic packages are widely used in many different types of equipment. Cerdip packaging is especially suitable in equipment