HM5116400J Search Results

Contextual Info: HM5116400 Series Product Preview 4,194,304-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION HM5116400J Series The Hitachi HM 5116400 is a C M O S dynamic R A M organized 4,194,304 words x 4 bits. It employs the most advanced C M O S technology for high performance and

Contextual Info: HM5116400 Series 4,194,304-Word x 4-Bit 4 4 cib2Q3 o o i a a ^ a SIE » H T - ^ 2 3 - 19 4?a « h i t e Product Preview H I TA C H I / L O G I C / A R R A Y S / M E M Dynamic Random Access Memory • DESCRIPTION HM5116400J Series The Hitachi HM5116400 is a CMOS dynamic RAM organized 4,194,304 words x

304X4

Abstract: 44C4000 KM44C4100-7 KM44C4000-6 UPD4217400-70 UPD4216400-80 K1174 Hitachi Scans-001
Contextual Info: - 1 6 M CMOS A 4 m & tt £ CC TRAC max ns) [ Dynami c -y * TRCY TÇAD TAH (ns) (ns) (ns) R A M ( 4, > •? ít ft TP mir. (ns) TWCY min (ns) TDH nin (ns) TRWC min (ns) 194, % V D D or V C C (V) 3 0 4 x 4) I DD max (raA) 2 8 P I N X m I DD STANDBY SB/1 SB2)

DATA SHEET OF IC 317

Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
Contextual Info: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,

A10q

Abstract: HM5116400Z-6 ice power 200 asc HM5116400Z HM5116400TT-7 CSR BLE HM5116400Z8
Contextual Info: blE D • HMTbSGB DD23 351 E7M ■ H I T 2 H M 511 6 4 0 0 S e r i e s - HITACHI/ LOGIC/ARRAYS/MEM 4,194,304-w ord x 4-bit D ynam ic R andom A c c e s s Memory The H itachi H M 5116400 is a CMOS dynamic RAM organized 4,194,304 w ords x 4 bits. It employs the most advanced CMOS technology for

80ns55

Contextual Info: NEWPRODUCT HB56A44QB Series 4 ,194,304-Word X 40-B it H igh D ensity D ynam ic RAM Module Under development - 0H IT A C H I R ev.3 M ay. 2 2 .1 9 9 2 D e sc r ip tio n T h e H B 56A 440B is a 4M X 40 d y n am ic RAM m o d u le, m o u n te d 10 pieces o f 16M bit DRAM

Contextual Info: marni N EW PRODUCT HB56A840B Series 8,388,608-Word X 40-Bit High Density Dynamic RAM Module - Under d evelop m en t - H IT A C H I Rev.2 May.22.1992 D escrip tion T he H B 56A 840B is a 8M X 40 d y n am ic RAM m o d u le, m o u n te d 20 pieces o f 16M bit DRAM

M5116400

Contextual Info: H M 5116400 S e rie s Product Preview 4,194,304-Word x 4-Bit Dynamic Random A c c e s s Memory • DESCRIPTION The Hitachi H M 5116400 is a C M O S dynamic R A M organized 4,194,304 words x 4 bits. It employs the most advanced C M O S technology for high performance and

flash 32 Pin PLCC 16mbit

Abstract: 398x
Contextual Info: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.

Contextual Info: ò rà er Alnmbe.r Mi/Tb^T NEW PRODUCT HB56A840B Series 8,388,608-Word X 40-Bit High Density Dynamic RAM Module - Under development - ^ H IT A C H I Rev.2 May. 22.1992 Description The HB56A840B is a 8M X 40 dynamic RAM module, mounted 20 pieces of 16Mbit ORAM

CBV2

Abstract: 27x10
Contextual Info: Reliability o f Hitachi IC Memories 1. Structure IC m em ory devices are classified as N M O S type, C M O S type, and B i-C M O S type. T here are advantages to it's circuit design, layout pattern, degree o f integration, and m anufacturing process. A ll H itachi m em ories are produced using standardized design, m anufacturing, and inspection techniques.

CBV2

Abstract: hitachi ic thyristor TT 570 N Reliability of Hitachi IC Memories
Contextual Info: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.

CBV2

Abstract: HN27C301
Contextual Info: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.

77106

Abstract: CRACK DETECTION PATTERNS HM628128 reliability test data cbv 2 10910 statistical Physics Hitachi DSA00503
Contextual Info: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.