HITACHI POWER AMPLIFIER Search Results

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

2SB367

Abstract: TRANSISTOR 2sb367 2SB368 2SB77 B77A hitachi 2SB77 PNP power transistors by hitachi 2SB368 B 2SB77A 2sb77 d
Contextual Info: HITACHI TRANSISTORS — FOR MEDIUM POWER AMPLIFIER USE— The Hitachi 2SB367 and 2SB368 are germanium PNP alloyed junction type transistors, featuring high current transfer ratio which can not be attained by conventional alloyed junction power transistors. The depend­

PF0120

Contextual Info: HITACHI PF0120 MOS FET Power Amplifier Module for GSM Mobile Phone HITACHI Application For GSM CLASS2 890 to 915 MHz Features • Low power control current: 1 mA Typ • High speed switching: 1.5 flsec Typ • Wide power control range: 90 dB Typ Pin Arrangement

2SJ122

Abstract: 2SK428 t3jh Hitachi Scans-001 vi-73 diode power Voltage73
Contextual Info: HITACHI/ÍOPTOELECTRONICSl r 4496205 73 73C HITACHI / COPTOLLbCI HONICS ’ DE § 44 TL.S0 S □DDTTLT ñ 09969 D T-3?-2/ 2SJ122-SILICON P-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair w ith 2SK 428

c2330 equivalent

Abstract: c2330
Contextual Info: HITACHI PF0121 MOS FET Power Amplifier Module for GSM Mobile Phone HITACHI Application For GSM C LASS2 890 to 915 M Hz Features • Low power control current: 0.9 m A Typ • High speed switching: 1.5 isec Typ • Wide power control range: 100 dB Typ Pin Arrangement

PF0030

Abstract: Hitachi PF0030
Contextual Info: HITACHI PF0030 Series MOS FET Power Amplifier HITACHI Features • • High stability: Load VSW R = 20 : 1 • • Low power control current: 400 |iA • • Thin package: 5 mmt Ordering Information Type No Operating Frequency Application PF0030 824 to 849 MHz

mosfet 12w smd

Abstract: 12W SMD MOSFET HITACHI PF0012 PF1002 SMD 12W MOSFET PF0012 Hitachi PF0030 PF0022 pf0030 hitachi PF0010
Contextual Info: HITACHI 17 1.8 RF Power Modules These modules offer high efficiency along with excellent immunity to intermodulation distortion and load mismatch. MOSFET technology is well suited to use in the output stage of a cellular radio. Hitachi offers a range of MOSFET Power Amplifiers

12W 04 SMD MOSFET

Abstract: PF1002 PF0012 mosfet 12w smd PF0022 pf0017b 12W SMD MOSFET PF0027 pf0030 hitachi PF0010
Contextual Info: HITACHI 17 1.8 RF Power Modules These modules offer high efficiency along with excellent immunity to intermodulation distortion and load mismatch. MOSFET technology is well suited to use in the output stage of a cellular radio. Hitachi offers a range of MOSFET Power Amplifiers

Contextual Info: HITACHI PF0147 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI ADE-208-322D Z 5th. Edition June, 1996 Application For G SM class4 890 to 915M H z. Features • 2stage am plifier

bl01rn1-a62-001

Abstract: BL01RN1-A62
Contextual Info: HITACHI PF0341A Series MOS FET Power Amplifier Module for UHF Band HITACHI ADE-208-338C Z 4th. Edition July 1996 Features • Small package: 30 x 10 x 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 |iA Typ

Contextual Info: HITACHI PF0348 Series MOS FET Power Amplifier Module for UHF Band HITACHI ADE-208-343C Z 3rd. Edition December, 1996 Features • Small package: 30 x 10 x 5.9mm • Low operation voltage: 7W at 7.2V

Contextual Info: HITACHI PFIOIOA MOS FET Power Amplifier Module for P/C LAN HITACHI Features • Frequency range: 806 to 824 MHz • Surface mounted small package: 1 cc, 3g with shielded cover • Loe voltage operation: 6 V • Low power control current: 300 |iA Typ Pin Arrangement

PF0031

Abstract: hitachi HD PCB
Contextual Info: HITACHI PF0031 MOS FET Power Amplifier Module for Mobile Phone HITACHI Application PF0031: For NM T900 890 to 925 MHz Features • High stability: Load VSW R = 20:1 • Low power control current: 400 ¡iA • Thin package: 5 mm t Pin Arrangement ADE-208-461 Z

almit

Contextual Info: HITACHI PF0025 MOS FET Power Amplifier for AMPS Handy Phone HITACHI Features • Surface mounted small package: 1 cc, 3 g with shielded cover • High efficiency: 47% Typ at actual output condition 1.2 W • Low voltage operation: 6 V • Low power control current: 300 |iA

vapc

Abstract: ADE-208-341C
Contextual Info: HITACHI PF0075A MOS FET Power Amplifier Module for AMPS Handy Phone HITACHI ADE-208-341C Z Product preview 4th. Edition July 1996 Features • 2 stage amplifier • High efficiency: 55 % Typ at 1.2 W • Low power control current: 500 |iA • Reflowable surface mounted small package: 0.6 cc

PF0210

Contextual Info: HITACHI PF0210 MOS FET Power Amplifier Module for ADC Mobile Phone HITACHI Features • High efficiency: 34% Typ for CW 30% Typ for 7t/4-DQPSK • Low input power: 0 dBm ave. Typ for n /4-DQPSK • Simple bias circuit • High speed switching: 8 |is Typ Pin Arrangement

MOS FET Power Amplifier Module for DCS 1800

Abstract: MAX1785
Contextual Info: HITACHI PF0414A MOS FET Power Amplifier Module for DCS 1800 Handy Phone HITACHI ADE-208-431A Z 2nd. Edition October 1996 _ Application For DCS 1800 class 1 1710 to 1785MHz. Features • 3stage amplifier • Small package: 0.2cc • High efficiency: 45% Typ

Contextual Info: HITACHI PF0415A MOS FET Power Amplifier Module for PCS 1900 Handy Phone HITACHI ADE-208-473A Z 2nd. Edition October 1996 Application For PCS 1900 class 1 1850 to 1910MHz. Features • 3stage amplifier • Small package: 0.2cc • High efficiency: 45% Typ

PF0411

Contextual Info: HITACHI PF0411 MOS FET Power Amplifier Module for PCS 1900 Handy Phone HITACHI Application For PCS 1900 class 1: 1850 to 1910 MHz Features • Small package: 1 cc, 3g • High efficiency: 32% Typ • High speed switching: 0.9 |isec Pin Arrangement •RF-E

HA17805P

Abstract: hitachi j100 HA17812P J5001 TLG223 r346 rectifier ha17805 nihon cement sg 403 varistor transistor c373
Contextual Info: HA16141/42, HA16341/42 PFC and PWM Controller, Redundant Secondary Switching Power Supply Controller Application Note ADE-504-005 Z Rev.0 Apr. 2002 Hitachi Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

pf0415b

Contextual Info: HITACHI PF0415B MOS FET Power Amplifier Module for PCS 1900 Handy Phone HITACHI ADE-208-474B Z 3rd. Edition October 1996 Application For PCS 1900 class 1 1850 to 1910MHz. Features • 3stage amplifier: OdBm input • Small package: 0.2cc • High efficiency: 35% typ. at 1,8W

PF0144

Abstract: PF0144-MOS
Contextual Info: HITACHI PF0144 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI ADE-208-463 Z 1st. Edition July 1996 Application For GSM class4 890 to 915 MHz Features • Small package: 1 cc, 3g • High efficiency: 45% Typ • High speed switching: 0.9 ^is Typ

PF0148E

Abstract: PF0148 Power Amplifier Module for GSM DE20 hitachi power amplifier
Contextual Info: HITACHI PF0148E MOS FET Power Amplifier Module for GSM Handy Phone HITACHI A DE-208-386D Z 5th. Edition June, 1996 Application For GSM class4 890 to 915MHz. Features • • • • • • • • 2stage amplifier Small package: 0.6cc High efficiency: 45% Typ

PF0231A

Abstract: BL01RN1-A62-001
Contextual Info: HITACHI PF0231A MOS FET Power Amplifier Module for ADC Handy Phone HITACHI Application For ADC class3 824 to 849 MHz Features • Low voltage operation 4.8 V • High efficiency: 42% Typ for CW 34% Typ for rc/4-DQPSK • Simple Pout control: Controllable by VAPC