B77A Search Results

FA2-6/1BEK

Abstract: D7552 Af572
Contextual Info: 123456789AB6CDC6E7C3F1 11 1 1 234567189AB4CDABE1FCBB9EB119AC66BC1 1 98 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 11 2 +,FD6C7256CB6 2 -F2F7BC6A2(BB7A62 8!&2 -A7CBD427B7C5A2./02B71(7A426F22+322 4B71(7A425667BA26F2B7(7260 27855FA2

l55a

Abstract: UL55A G535A g435 L54B G536a UL-55 G335A GB72A BUP46
Contextual Info: Power M anagem ent Division Sem elab B I-P O L A R POWER TRANSISTORS D iffused by S EM E F A B in G lenrothes and built by S E M E LA B in Lutterw orth are tw o ranges of high energy B i-P o la r transistors: • G 170 series of 4 die de sig ned fo r use in ve ry fast sw itching high voltage applications.

Contextual Info: 123456787  123456789A6BC3DEF7989A6 E339F3B3EB85E3973A3A D9"98BC3A8A3A68AC3$6"96E3 %D$&3'A E34B78A3AE789A63%'4&39"3CE EC3F F8E#37A68AC3

2SB367

Abstract: TRANSISTOR 2sb367 2SB368 2SB77 B77A hitachi 2SB77 PNP power transistors by hitachi 2SB368 B 2SB77A 2sb77 d
Contextual Info: HITACHI TRANSISTORS — FOR MEDIUM POWER AMPLIFIER USE— The Hitachi 2SB367 and 2SB368 are germanium PNP alloyed junction type transistors, featuring high current transfer ratio which can not be attained by conventional alloyed junction power transistors. The depend­

Contextual Info: 123456789AB6CDC6E7C3F1 11 1 1 2345637894AB8CDEF3D 12 1 DEF3D B31 1 28  988 11 EFA56CA6*FD6C71E&1CA1FA56CA6 BB7A61EE&1

lm 6358

Abstract: PAAI LTZF XT-32.768K NJU6358 NJU6358AX NJU6358C NJU6358D NJU6358HX NJU6358M
Contextual Info: N J U 6 3 5 8 '> « ;-X W r « w A K E - u P Í I 7 ;u 9 -r i 9 n y >J S n NJU6358'>U-A* l i % M m r Ä # 4 C » (S S B f M t i & $ t i t t £ iJ 7 j i ' m > n ^ i c T % * i i f i ! i g i a s & , Wj Ì. ÌiMl'iT I 5 qË í-f7 1/^ A Î , T * - i » l g f f l V ? M / !/ > t f . l * 3 « | l &

LED 3v 20ma

Abstract: MSB556DA
Contextual Info: M IÜK U D ESCRIPTIO N 1V 15D 330L ÎA BLINKING LED LAM PS -1 3 /4 PACK A G E 04.8 MSB556DA is GaAlAs red LED lamp with a 5mm red diffused lens. The built-in IC flashes the lamp on/off and can be driven directly by standard TTL and CMOS circuits, eliminating the need for external

ba 5839 fb

Abstract: 37a65 ba 5835
Contextual Info: 123456787 69ABCDEFBBAF5BAC 123456789A6BC3DEF7989A63A38E311 E 3113 9F 3 B 3 569EFBC 3 A8A 3  3 8B8 3 EFACEF 3 B9A5F 3 F96BC 3 A7EFF96 3 8BF F283 967AAB8EF3B6 3C!3

62A21

Abstract: 3HD23 E78E
Contextual Info: 123456789  123456789A6BC3DEF7989A6 E339F3B3EB85E3973A 3967C5"96#33 D9#98BC3A8A3A68AC3%6#96E3 &D%' 3 A E34B78A3AE789A63&(4' 39#3CE!EC3F*F8E$37A68AC3

O05C

Contextual Info: N J U 6 3 5 8 '> « ;-X W r « w A K E - u P Í I 7 ;u 9 -r i 9 n y >J S n NJU6358'>U-A* l i % M m r Ä # 4 C » (S S B f M t i & $ t i t t £ iJ 7 j i ' m > n ^ i c T % * i i f i ! i g i a s & , Wj Ì. ÌiMl'iT I 5 qË í-f7 1/^ A Î , T * - i » l g f f l V ? M / !/ > t f . l * 3 « | l &

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published