HIGH SPEED TRANSISTOR Search Results

44P0K

Abstract: R1RW0416D R1RW0416DGE-2LR R1RW0416DGE-2PR R1RW0416DSB-2LR R1RW0416DSB-2PR
Contextual Info: R1RW0416D Series 4M High Speed SRAM 256-kword x 16-bit REJ03C0107-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit

R1RW0408D

Abstract: R1RW0408DGE-2LR R1RW0408DGE-2PR
Contextual Info: R1RW0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0111-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit

HM621400HC

Abstract: HM621400HCJP-10 HM621400HCLJP-10 Hitachi DSA00358
Contextual Info: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing

HM62W8511HI

Abstract: HM62W8511HJPI HM62W8511HJPI-15 512KWORD Hitachi DSA0044
Contextual Info: HM62W8511HI Series 4M High Speed SRAM 512-kword x 8-bit ADE-203-1036A(Z) Rev. 1.0 Apr. 15, 1999 Description The HM62W8511HI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed

HM62W16255HI

Abstract: HM62W16255HJPI HM62W16255HJPI-15 HM62W16255HTTI HM62W16255HTTI-15 Hitachi DSA0044
Contextual Info: HM62W16255HI Series 4M High Speed SRAM 256-kword x 16-bit ADE-203-1038A (Z) Rev. 1.0 Apr. 15, 1999 Description The HM62W16255HI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed

HM62W8511H

Abstract: HM62W8511HJP-12 HM62W8511HJP-15 HM62W8511HLJP-12 HM62W8511HLJP-15 Hitachi DSA00200
Contextual Info: HM62W8511H Series 4M High Speed SRAM 512-kword x 8-bit ADE-203-750D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM62W8511H is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed

HM621400H

Abstract: HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA00197
Contextual Info: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-787D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit

HM62W4100H

Abstract: HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-12 HM62W4100HLJP-15 Hitachi DSA00200
Contextual Info: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-774D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed

HM628511HC

Abstract: HM628511HCJP-10 HM628511HCLJP-10 Hitachi DSA00358
Contextual Info: HM628511HC Series 4M High Speed SRAM 512-kword x 8-bit ADE-203-1197 (Z) Preliminary Rev. 0.0 Nov. 9, 2000 Description The HM628511HC Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit

HM62W8511HC

Abstract: HM62W8511HCJP-10 HM62W8511HCLJP-10 Hitachi DSA00358
Contextual Info: HM62W8511HC Series 4M High Speed SRAM 512-kword x 8-bit ADE-203-1201 (Z) Preliminary Rev. 0.0 Sep. 20, 2000 Description The HM62W8511HC is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

Hitachi DSA00276

Contextual Info: HM62W4100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1202A (Z) Preliminary Rev. 0.1 May. 29, 2001 Description The HM62W4100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

HM624100H

Abstract: HM624100HJP-10 HM624100HJP-12 HM624100HJP-15 HM624100HLJP-10 HM624100HLJP-12 HM624100HLJP-15 Hitachi DSA0044
Contextual Info: HM624100H Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-789D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed

2SC2625

Abstract: power transistor 2sc2625 datasheet transistor 2sc2625 2sc2625 equivalent 2sC2625 transistor power transistor 2sc2625
Contextual Info: 2SC2625 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters

high dc current gain transistor

Abstract: 2sc2542
Contextual Info: 2SC2542 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-220AB Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters

HM62W8511HI

Abstract: HM62W8511HJPI HM62W8511HJPI-15 Hitachi DSA00358
Contextual Info: HM62W8511HI Series 4M High Speed SRAM 512-kword x 8-bit ADE-203-1036A(Z) Rev. 1.0 Apr. 15, 1999 Description The HM62W8511HI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed

HM624100HC

Abstract: HM624100HCJP-10 HM624100HCLJP-10 Hitachi DSA00358
Contextual Info: HM624100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1198 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

HM62W1400H

Abstract: HM62W1400HJP-12 HM62W1400HJP-15 HM62W1400HLJP-12 HM62W1400HLJP-15 HM62W1400HLTT-12 HM62W1400HLTT-15 HM62W1400HTT-12 HM62W1400HTT-15 Hitachi DSA0044
Contextual Info: HM62W1400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-773E (Z) Rev. 2.0 Nov. 11, 1998 Description The HM62W1400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed

Contextual Info: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit HITACHI ADE-203-774D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword x 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed

Contextual Info: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit HITACHI ADE-203-787D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword x 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed

Contextual Info: 2SC3551 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters

2SC2626

Contextual Info: 2SC2626 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters

High Current Switching Applications transistor

Contextual Info: 2SC3723 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-220AB Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters

Contextual Info: HM62W1400H Series 4M High Speed SRAM 4-Mword x 1-bit HITACHI ADE-203-773E (Z) Rev. 2.0 Nov. 11, 1998 Description The HM62W1400H is a 4-Mbit high speed staticRAM organized 4-Mword x 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed

Contextual Info: HM624100H Series 4M High Speed SRAM 1-Mword x 4-bit HITACHI ADE-203-789D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword x 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed