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    512KWORD Search Results

    512KWORD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    32C408BRP-20

    Abstract: 32C408BRP-25 32C408BRP-30 512KWORD F3601 32c49
    Contextual Info: SPACE ELECTRONICS INC. CMOS 512KWORD X 8-BIT STATIC RAM SPACE PRODUCTS A0 A1 1 32C408BRP 36 NC A18 A17 A16 A2 A3 A13 A12 A11 A10 A9 A8 CS I/O1 A15 OE A7 A6 I/O8 A4 I/O2 I/O7 Vcc Vss Vss Vcc I/O3 I/O4 I/O6 I/O5 WE A14 A5 A6 A13 A12 A7 A8 A11 A10 A4 18 19 NC


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    512kword32c408brp99rev332c408brp-20+432c408brp-2532c408brp-30f360132c49 PDF

    SL821

    Contextual Info: HB66A2561 6C-25 524,288W ordX8bit /2 6 2 ,144W o rd X 16bit High Density CM OS Static RAM Card H IT A C H I Rev.o sep.10,1992 The HB66A25616C-25 is a high density 512kWord X 8bit or 256kWord X 16bit static RAM Card, mounted of 4pieces 1M static RAM sealed in TSOP package.


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    hb66a25616c-2516bithb66a25616c-25+4512kword256kword68-pinsl821 PDF

    Contextual Info: H B 6 6 A 2 5 6 1 6 C A -2 5 5 2 4 ,2 8 8 W o rd X 8b it /2 6 2 ,1 4 4 W o rd X 1 6 b it High Density C M O S Static RAM Card Rev.O H IT A C H I sep.10,1992 The HB66A25616CA-25 is a high density 512kWordX 8bit or 256kWordX 16bit static RAM Card, mounted of 4pieces 1M static RAM sealed in TSOP package.


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    hb66a25616ca-25512kwordx256kwordx16bit+268-pin512kw PDF

    72ZZZZ

    Abstract: K777
    Contextual Info: H B 6 6 A 5 1 21 6 C A -2 5 1,048,576WordX8bit /524,288WordX16bit High Density CMOS Static RAM Card a Rev.O jul.10,1992 ^ H IT A C H I The HB66A51216CA-25 is a high density lM W ord X 8bit or 512kWord X 16bit static RAM Card, mounted of 8pieces 1M static RAM sealed in TSOP package.


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    576wordx8bit288wordx16bithb66a51216ca-25512kword+516bit68-pin512kwordx72zzzzk777 PDF

    32C408BRP-20

    Abstract: 32C408BRP-25 32C408BRP-30 F3601 32c49
    Contextual Info: SPACE ELECTRONICS INC. CMOS 512KWORD X 8-BIT STATIC RAM SPACE PRODUCTS A0 A1 1 32C408BRP 36 NC A18 A17 A16 A2 A3 A13 A12 A11 A10 A9 A8 CS I/O1 A15 OE A7 A6 I/O8 A4 I/O2 I/O7 Vcc Vss Vss Vcc I/O3 I/O4 I/O6 I/O5 WE A14 A5 A6 A13 A12 A7 A8 A11 A10 A4 18 19 NC


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    512kword32c408brp36ldfpf36-01+698rev332c408brp-2032c408brp-2532c408brp-30f360132c49 PDF

    HM628512C

    Abstract: HM628512CLFP-5SL HM628512CLFP-7 HM628512CLP-5SL HM628512CLP-7 HM628512CLRR-5SL HM628512CLRR-7 HM628512CLTT-5SL HM628512CLTT-7 Hitachi DSA00207
    Contextual Info: HM628512C Series 4 M SRAM 512-kword x 8-bit ADE-203-1212C (Z) Rev. 3.0 Aug. 5, 2002 Description The Hitac hi HM628512C is a 4-Mbit static R AM orga nized 512-kw ord × 8-bit. It rea liz es higher density, higher per forma nce and low powe r consumption by employing C MOS proc ess tec hnology (6- tr ansistor


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    hm628512c512-kwordade-203-1212c512-kw+12525-mil400-mil600-milhm628512clfp-5slhm628512clfp-7hm628512clp-5slhm628512clp-7hm628512clrr-5slhm628512clrr-7hm628512cltt-5slhm628512cltt-7hitachi dsa00207 PDF

    Contextual Info: TMS320VC5421 Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS098D December 1999 − Revised October 2008 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments


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    tms320vc5421sprs098dsprs098c PDF

    Contextual Info: HM62V8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-905C (Z) Rev. 2.0 Jan. 29, 1999 Description The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (J,m Hi-CMOS process technology.


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    hm62v8512b512-kwordade-203-905c525-mil+1400-mil PDF

    117 dram hen nth

    Abstract: aaeh marking ccs ldl LH28F800BGHB-BL85 LH28F800BG
    Contextual Info: SHARP LHF80B23 CONTENTS PAGE PAGE 1 INTRODUCTION. 3 5 DESIGN 1.1 New Features. 3 5.1 Three-Line Output Control.20


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    lhf80b23aa2034csp8008tcm-rh+6cv777117 dram hen nthaaeh markingccs ldllh28f800bghb-bl85lh28f800bg PDF

    Contextual Info: RMLV0408E Series 4Mb Advanced LPSRAM 512-kword x 8-bit R10DS0206EJ0100 Rev.1.00 2014.2.27 Description The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524,288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher


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    rmlv0408e512-kwordr10ds0206ej0100288-word+132-pin PDF

    R1LV0408D

    Abstract: R1LV0408DSB-7L R1LV0408DSA
    Contextual Info: R1LV0408D Series 4M SRAM 512-kword x 8-bit REJ03C0310-0100 Rev.1.00 May.24.2007 Description The R1LV0408D is a 4-Mbit static RAM organized 512-kword × 8-bit, fabricated by Renesas’s highperformance 0.15µm CMOS and TFT technologies. R1LV0408D Series has realized higher density,


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    r1lv0408d512-kwordrej03c0310-010032-pin+332pinr1lv0408dsb-7lr1lv0408dsa PDF

    LH28F800BJHE-PBTLT9

    Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F800BJHE-PBTLT9 Flash Memory 8Mbit 1Mbitx8 (Model Number: LHF80JT9) Lead-free (Pb-free) Spec. Issue Date: October 8, 2004 Spec No: EL16X081 LHF80JT9 ●Handle this document carefully for it contains material protected by international copyright law.


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    lh28f800bjhe-pbtlt9lhf80jt9el16x081 PDF

    HM6216514I

    Abstract: HM6216514LTTI-5SL HM6216514LTTI-5
    Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    hm6216514ihm6216514ltti-5slhm6216514ltti-5 PDF

    MB86860

    Abstract: 0x80000410 bit3113 SCSN1 sparclite hypersparc BIT3115 S200 SS200 SAD-100
    Contextual Info: MB86860 SPARClite SPARClite MB86860 Series Data Sheet Rev.1.2 July 27, 1999 Fujitsu This material is preliminary and is subject to change without notice.  SPARC is a registered trademark of SPARC International, Inc. in the United States and is based on technology developed by Sun


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    mb8686032-bit600us0x80000410+8bit3113scsn1sparclitehypersparcbit3115s200ss200sad-100 PDF

    A17a

    Abstract: HM62W8512B HM62W8512BLFP-5 HM62W8512BLFP-5SL HM62W8512BLFP-5UL HM62W8512BLFP-7 HM62W8512BLFP-7SL HM62W8512BLFP-7UL HM62W8512BLTT-5
    Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    a17ahm62w8512bhm62w8512blfp-5hm62w8512blfp-5sl+5hm62w8512blfp-5ulhm62w8512blfp-7hm62w8512blfp-7slhm62w8512blfp-7ulhm62w8512bltt-5 PDF

    HM62G18512ABP-30

    Abstract: HM62G18512ABP-33 HM62G18512ABP-40 SA10 SA13 SA14 SA18 SA283A
    Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    hm62g18512abp-30hm62g18512abp-33hm62g18512abp-40sa10+4sa13sa14sa18sa283a PDF

    HM62W8511HCJP-12

    Abstract: HM62W8511HC HM62W8511HCJP-10 HM62W8511HCLJP-10 HM62W8511HCLJP-12 HM62W8511CJP HM62W8511CJP10
    Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    d-85622d-85619hm62w8511hcjp-12hm62w8511hc+5hm62w8511hcjp-10hm62w8511hcljp-10hm62w8511hcljp-12hm62w8511cjphm62w8511cjp10 PDF

    LH28F800BJHB-PTTL10

    Abstract: FC004 ap007 7D002
    Contextual Info: Date 8M x8/x16 Flash Memory LH28F800BJHB-PTTL10 Jul. 6. 2001 LHF80J24 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written


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    x8/x16lh28f800bjhb-pttl10lhf80j24ap-001-sd-e+5ap-006-pt-eap-007-sw-efc004ap0077d002 PDF

    MR27T802F

    Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    mr27t802f PDF

    MR27V802F

    Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    mr27v802f PDF

    Contextual Info: HM628512BI Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-935A (Z) Preliminary, Rev. 0.1 Dec. 14, 1998 Description The Hitachi HM 628512BI is a 4-M bit static RAM organized 512-kword x 8-bit. It realizes higher density, higher perform ance and low pow er consumption by employing 0.35 ( A m Hi-CMOS process technology.


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    hm628512bi512-kwordade-203-935a628512bi+4525-mil400-m600-mil40815hitec PDF

    Contextual Info: HM628512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-903 (Z) Preliminary, Rev. 0.0 April 24, 1998 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (Am Hi-CMOS process technology.


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    hm628512b512-kwordade-203-903525-mil+2400-mil600-mil PDF

    Contextual Info: H M 6 2 W 8 5 1 1 H S e r ie s 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-750 Z Preliminary Rev. 0.0 F eb.27,1997 Description The HM62W8511H is an asynchronous high-speed static RAM organized as 512-kword x 8-bit. It achieves high-speed access time (10/12/15 ns) through 0.35 p.m CMOS process and high-speed circuit designing


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    524288-wordade-203-750hm62w8511h512-kword+5400-mil36-pinns/12ns/15gd34g PDF

    elan touch pad

    Abstract: 13 eam
    Contextual Info: eAM Series 16 Bits DSP Sound Processor Product Specification DOC. VERSION 1.7 ELAN MICROELECTRONICS CORP. DEC 2009 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation. ELAN and ELAN logo


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    elan touch pad13 eam PDF