HM62W4100H Search Results

Contextual Info: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-774B (Z) Preliminary Rev. 0.2 Dec. 5, 1997 Description The HM62W4100H is an asyncronous high speed static RAM organized as 1-Mword × 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 µm CMOS process (4-transistor + 2-poly resistor

Contextual Info: HM62W4100HC Series Pin Arrangement 32-pin SOJ A0 A1 A2 A3 A4 CS I/O1 VCC VSS I/O2 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A19 A18 A17 A16 A15 OE I/O4 VSS VCC I/O3 A14 A13 A12 A11 A10 NC Top view

HM62W4100H

Abstract: HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-12 HM62W4100HLJP-15 Hitachi DSA0044
Contextual Info: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-774D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed

Hitachi DSA00176

Contextual Info: HM62W4100HC シリーズ 4M High Speed SRAM 1-Mword x 4-bit ADJ-203-569 (Z) 暫定仕様 Rev. 0.0 ’00. 9. 28 概要 HM6 2W 41 00 HC シリーズは 1 M ワード×4 ビット構成の 4 M ビット高速スタティック RA M です。CMO S （6 トランジスタメモリセ ル）プロセス技術を採用し，高密度，高性能，低消 費電力を実現しました。し

Hitachi DSAUTAZ005

Contextual Info: HM62W4100H Series Package Dimensions HM62W4100HJP/HLJP Series CP-32DB Unit: mm 3.50 ± 0.26 1.30 Max 0.43 ± 0.10 0.41 ± 0.08 1.27 0.10 Dimension including the plating thickness Base material dimension 12 2.85 ± 0.12 16 0.74 0.80 +0.25 –0.17 1 11.18 ± 0.13

Contextual Info: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit HITACHI ADE-203-774C (Z) Preliminary, Rev. 0.3 May 15, 1998 Description The HM62W4100H is an asynchronous high speed static RAM organized as 1-Mword x 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (Am CMOS process (4-transistor + 2poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the

Contextual Info: HM62W4100H Series 1048576-word X 4-bit High Speed CMOS Static RAM HITACHI ADE-203-774 Z Preliminary Rev. 0.0 Apr. 28, 1997 Description The HM62W4100H is an asynchronous high speed static RAM organized as 1-Mword x 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 )im CMOS process and high speed

HM62W4100HC

Abstract: HM62W4100HCJP-10 HM62W4100HCLJP-10 Hitachi DSA00358
Contextual Info: HM62W4100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1202 (Z) Preliminary Rev. 0.0 Sep. 28, 2000 Description The HM62W4100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

HM62W4100H

Contextual Info: HM62W4100H Series Pin Description Pin name Function A0 to A19 Address input I/O1 to I/O4 Data input/output CS Chip select OE Output enable WE Write enable VCC Power supply VSS Ground NC No connection Block Diagram LSB A1 A17 A7 A11 A16 A2 A6 A5 (MSB) VCC

HM62W4100HC

Abstract: HM62W4100HCJP-10 HM62W4100HCJP-12 HM62W4100HCLJP-10 HM62W4100HCLJP-12 Hitachi DSA00316
Contextual Info: HM62W4100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1202C (Z) Rev. 2.0 Nov. 9, 2001 Description The HM62W4100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

HM62W4100H

Abstract: HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-12 HM62W4100HLJP-15 Hitachi DSA00189
Contextual Info: HM62W4100H シリーズ 4M High Speed SRAM 1-Mword x 4-bit ADJ-203-266B (Z) ’98. 9. 15 Rev. 1.0 概要 HM62W4100H シリーズは 1M ワード×4 ビット構成の 4M ビット高速スタティック RAM です。CMOS（4 トランジスタ+2 ポリレジスタメモリセル）プロセス技術を採用し，高密度，高性能，低消費電力を実現し

diode a3

Abstract: transistor a13 HM62W4100HC
Contextual Info: HM62W4100HC Series Block Diagram LSB A14 A13 A12 A5 A6 A7 A11 A10 A3 A1 VCC Row decoder (MSB) VSS CS Column I/O I/O1 . . . I/O4 Input data control (LSB) WE CS OE CS 4 1024-row x 64-column × 16-block × 4-bit (4,194,304 bits) Column decoder A8 A9 A19 A17 A18 A15 A0 A2 A4 A16

HM62W4100H

Abstract: HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-12 HM62W4100HLJP-15 Hitachi DSA00200
Contextual Info: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-774D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed

Contextual Info: HM62W4100H Series 1048576-word x 4-bit High Speed CMOS Static RAM HITACHI ADE-203-774 Z Preliminary Rev. 0.0 Apr. 28, 1997 Description The HM62W4100H is an asyncronous high speed static RAM organized as 1-Mword x 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (im CMOS process and high speed circuit

Hitachi DSA00276

Contextual Info: HM62W4100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1202A (Z) Preliminary Rev. 0.1 May. 29, 2001 Description The HM62W4100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

Contextual Info: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit HITACHI ADE-203-774A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM62W4100H is an asynchronous high speed static RAM organized as 1-Mword x 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (Am CMOS process and high speed

CP-32DB

Abstract: Hitachi DSAUTAZ006
Contextual Info: HM62W4100HC Series Package Dimensions HM62W4100HCJP/HCLJP Series CP-32DB As of January, 2001 Unit: mm 3.50 ± 0.26 1.30 Max *0.43 ± 0.10 0.41 ± 0.08 1.27 2.85 ± 0.12 16 0.74 0.80 +0.25 –0.17 1 11.18 ± 0.13 17 10.16 ± 0.13 32 20.71 21.08 Max 9.40 ± 0.25

Contextual Info: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit HITACHI ADE-203-774D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword x 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed

HM62W4100H

Abstract: HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-12 HM62W4100HLJP-15 Hitachi DSA00316
Contextual Info: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-774D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed

Contextual Info: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-774D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed

Hitachi DSAUTAZ006

Contextual Info: HM62W4100HC Series 4M High Speed SRAM 1-Mword x 4-bit ADE-203-1202A (Z) Preliminary Rev. 0.1 May. 29, 2001 Description The HM62W4100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

Contextual Info: HM62W4100H Series Ordering Information Type No. Access time Package HM62W4100HJP-12 HM62W4100HJP-15 12 ns 15 ns 400-mil 32-pin plastic SOJ CP-32DB HM62W4100HLJP-12 HM62W4100HLJP-15 12 ns 15 ns Pin Arrangement HM62W4100HJP/HLJP Series A0 A1 A2 A3 A4 CS I/O1

HM62W4100H

Abstract: HM62W4100HJP-10 HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-10 HM62W4100HLJP-12 HM62W4100HLJP-15 Hitachi DSA00182
Contextual Info: HM62W4100H Series 1048576-word x 4-bit High Speed CMOS Static RAM ADE-203-774 Z Preliminary Rev. 0.0 Apr. 28, 1997 Description The HM62W4100H is an asyncronous high speed static RAM organized as 1-Mword × 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 µm CMOS process and high speed circuit

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with