HIGH FREQUENCY SILICON TRANSISTOR Search Results

MPQ918

Abstract: MO chip Transistor 2n918 die transistor k84 2N918 2N918 thermal resistance PDB00 chip die hp transistor
Contextual Info: MPQ918 SILICON QUAD DUAL IN-LINE NPN SILICON ANNULAR HIGH FREQUENCY AMPLIFIER TRANSISTORS QUAD DUAL IN-LINE NPN SILICON HIGH FREQUENCY AMPLIFIER TRANSISTORS . designed for low-level, high-ijain am plifier applications. • Lo w Noise Figure — @ I q - 1.0 mAdc

Contextual Info: HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J HIGH FREQUENCY AMPLIFIER APPLICATIONS AM HIGH FREQUENCY AMPLIFIER APPLICATIONS AUDIO FREQUENCY AMPLIFIER APPLICATIONS Unit in mm MAXIMUM RATINGS Ta = 25°C

MRF5160

Abstract: F5160 MRF*5160
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5160 The RF Line PNP Silicon High Frequency Transistor lc = -400 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR PNP SILICON . . . designed for am plifier, oscillator or frequency m ultiplier applications in industrial

Contextual Info: HN3G01J TOSHIBA TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR H N ^ m i HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. MAXIMUM RATINGS Ta = 25°C

Contextual Info: HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications Unit in mm Absolute Maximum Ratings Ta = 25°C

UPA509TA

Abstract: uPA50 MARKING UV N-Channel Silicon Junction Field Effect Transistor uPA509
Contextual Info: DATA SHEET µ PA509TA NPN EPITAXIAL SILICON TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR HIGH FREQUENCY AMPLIFIER, AM HIGH FREQUENCY AUDIO FREQUENCY AMPLIFIER APPLICATION FEATURES PACKAGE DRAWING Unit: mm • Composite type J-FET and NPN Transistor

high frequency amplifier

Abstract: 2N918 MHQ918 to-116
Contextual Info: MHQ918 silicon QUAD DUAL IN-LINE NPN SILICON HERMETIC ANNULAR HIGH FREQUENCY AMPLIFIER TRANSISTORS QUAD DUAL IN-LINE NPN SILICON HIGH FREQUENCY AMPLIFIER TRANSISTORS . designed fo r low-level, high-gain a m plifier Applications. • L ow Noise Figure — @ l c = 1.0 mAdc

transistor npn 12V 1A Collector Current

Abstract: 2SC3053 uj01
Contextual Info: SMALL-SIGNAL TRANSISTOR 2SC3053 FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION . 2SC3053 is a super mini silicon NPN epitaxial type transistor OUTLINE DRAWING -, c +0-5 2 5 -0.3 designed for high frequency amplify, oscillating, frequency exchange, medium

Contextual Info: TOSHIBA HN3G01J TO SH IBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS AM HIGH FREQUENCY AM PLIFIER APPLICATIONS +0.2 0.1 1 .6 _ ] AUDIO FREQUENCY AM PLIFIER APPLICATIONS

Contextual Info: <Semi-Condaato\ fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5943 The RF Idne 1.2 GHz -50 mAde NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON

N3G01J

Abstract: HN3G01J EG160
Contextual Info: TOSHIBA HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR H N3G01J HIGH FREQUENCY AM PLIFIER APPLICATIONS AM HIGH FREQUENCY AM PLIFIER APPLICATIONS AUDIO FREQUENCY AM PLIFIER APPLICATIONS M A X IM U M RATINGS Ta = 25°C

c 4977 transistor

Abstract: 702 mini transistor 2SC5621 LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN MAG 1832
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5621 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING 2SC5621 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.

2N5160 equivalent

Abstract: 2n5160 CM5160 TRANSISTOR REPLACEMENT high frequency silicon transistor TO-39 CASE
Contextual Info: Central CM5160 TM Semiconductor Corp. PNP HIGH FREQUENCY SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CM5160 is a silicon PNP RF transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and non-saturated switching

sc 6038

Abstract: 2SC5634 a 4503 data sheet
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5634 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5634 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.

sc 6038

Abstract: 2SC5636 transistor 3669 A 4503 ic 1346 transistor making 528
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5636 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5636 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.

sc 6038

Abstract: a 4503 data sheet A 4503 ic ic a 4503 2SC5635 A 3141 s11
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5635 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5635 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.

2N5583

Abstract: MRF558
Contextual Info: I MOT OROL A SC XSTRS/R F 4bE D b3b?254 OO^ MOf l e T •MOTb MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line Ip = -5 0 0 m A HIGH FREQUENCY TRANSISTOR PNP SILICON HIGH FREQUENCY TRANSISTOR PNP SILICON . . . designed for applications in high frequency amplifiers and

MPS3866

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor IC = 400 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol Value Unit VCEO

transistor c5

Abstract: transistor c3-12 2N3866 c4 ic rf amplifier high frequency transistor
Contextual Info: DATA SHEET 2N3866 NPN SILICON HIGH FREQUENCY TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3866 is a Silicon NPN RF Transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.

2N3866A

Abstract: 2n3866 Transistor 2N3866
Contextual Info: 2N3866 2N3866A Central TM Semiconductor Corp. NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.

MRF5811

Abstract: ADC IC 0808
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF5811LT1 Designed for high current low power am plifiers up 1o 1.0 GHz. IC = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON • • Low Noise 2.0 dB @ 500 MHz

MRF581

Abstract: MRF581A IS211 MRF581M f5b FERRITE f5b FERRITE bead
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF581 MRF581A The RF Line NPN Silicon High-Frequency Transistors . . . designed for high current low power amplifiers up to 1.0 GHz. • lc = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTORS NPN SILICON Low Noise 2.0 dB @ 500 MHz

3020

Abstract: 3019 2N3019 3020 transistor 2n3020
Contextual Info: 2N 3019 2N 3020 SILICON PLANAR NPN HIGH-CURRENT, HIGH-FREQUENCY AMPLIFIERS The 2N 3019 and 2N 3020 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case, designed fo r high-current, high-frequency am plifier applications. They feature high gain and low saturation voltages.

LP1983

Abstract: motorola 039
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LP1983 The RF Line NPN Silicon High-Frequency Transistor . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers. lc = 30 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON • High Current-Gain — Bandwidth Product — f j = 4.5 GHz Typ