HFE IS TRANSISTOR TO220 Search Results

2SA1742

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE sat . This transistor is ideal

transistor j13009-2

Abstract: J13009-2 j13009 2 FJP13009
Contextual Info: FJP13009 High-Voltage Fast-Switching NPN Power Transistor Features Description • High-Voltage Capability • High Switching Speed The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is available with multiple hFE bin classes for ease of design use. The FJP13009 is

Contextual Info: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)

Contextual Info: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)

Contextual Info: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)

2SD880L

Abstract: 2sd880 equivalent utc 2SD880L QW-R203-013 2SB834 2SD880 power transistor audio amplifier 500 watts
Contextual Info: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)

UTC2SD880

Abstract: 2sd880 equivalent 2SB834 2SD880 QW-R203-013
Contextual Info: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)

2SD880L

Abstract: 2SD880 2sd880 equivalent 2sd880 datasheet 013 transistor 2SB834 QW-R203-013 transistor 2sd880 hfe-300 utc 2SD880L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. „ FEATURES * High DC Current Gain: hFE=300 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)

2SD880

Abstract: 2sD880 TRANSISTOR 2SD880L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications.  FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)

2SD880L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. „ FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)

2sd880

Abstract: 2SD880L utc 2SD880L 2SD880, 1.5 power dissipation transistor 2sd880 013 transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. „ FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)

2sd transistors equivalent

Abstract: 2SD2398 434 NPN transistors 2SD239
Contextual Info: 2SD2398 Transistor, NPN, Darlington Features Dimensions Units : mm • available in TO-220FN package • Darlington connection provides high dc current gain (hFE) 2SD2398 (TO-220FN) • damper diode is incorporated • built-in resistors between base and

Contextual Info: 2ST31A Low voltage NPN power transistor Features • High switching speed ■ Good performances in terms of hFE linearity TAB Application ■ Linear and switching industrial applications 3 Description 1 TO-220 The device is manufactured in planar technology

2SD2422

Abstract: 2SD242 2sd transistors equivalent
Contextual Info: 2SD2422 Transistor, NPN, Darlington Features Dimensions Units : mm • available in TO-220FP (SC-67) package • Darlington connection provides high dc current gain (hFE) • damper diode is incorporated • built-in resistors between base and emitter •

lc 3101

Abstract: k 351 transistor 2sd darlington L001 transistor Mu
Contextual Info: 2SD1889 Transistor, NPN, Darlington Features Dimensions Units : mm • available in TO-220FP (SC-67) package • Darlington connection provides high dc current gain (hFE) 2SD1889 (TO-220FP) 10.0 • damper diode is incorporated • built-in resistors between base and

2SD2399

Abstract: 2SD 438
Contextual Info: 2SD2399 Transistor, NPN, Darlington Features Dimensions Units : mm • available in TO-220FN package • Darlington connection provides high dc current gain (hFE) • • • • 2SD2399 (TO-220FN) damper diode is incorporated built-in resistors between base and

Contextual Info: 2SD1889 Transistor, NPN, Darlington Features Dimensions Units : mm • available in TO-220FP (SC-67) package • Darlington connection provides high dc current gain (hFE) 2SD1889 (TO-220FP) • damper diode is incorporated • built-in resistors between base and

2SB1568

Abstract: 2SD2399
Contextual Info: 2SB1568 Transistors Power Transistor −80V, −4A 2SB1568 zExternal dimensions (Unit : mm) z Features 1) Available in TO-220 FN package 2) Darling connection provides high dc current gain (hFE) 3) Damper diode is incorporated 4) Built in resistors between base and

2SC2073

Abstract: transistor 2sc2073 2sc2073 amplifier 2SA940 FI150
Contextual Info: ÆàMOSPEC NPN SILICON POWER TRANSISTORS NPN 2SC2073 2SC2073 transistor is designed for use in general purpose Power amplifier,vertical output application FEATURES: * Collector-Emitter Voltage VCEO= 150V Min * DC Current Gain hFE= 40-140@lc= 500mA * Complementary PNP 2SA940

2ST31A

Abstract: st 393
Contextual Info: 2ST31A Low voltage NPN power transistor Preliminary data Features • High switching speed ■ Good performances in terms of hFE linearity TAB Application ■ Linear and switching industrial applications 3 Description 1 TO-220 The device is manufactured in planar technology

SJE1497

Abstract: Transistor SJE1497
Contextual Info: ¿2&M0SPEC PNP PNP SILICON POWER TRANSISTORS SJE1497 SJE1497 transistor is designed for use in general purpose Power amplifier,verticai output application FEATURES: * Collector-Emitter Voltage v c e o = 150V Min * DC Current Gain hFE= 30(Min)@lc= 300mA 1.5 AMPERE

Contextual Info: 2SB1568 Transistor, PNP, Features Dimensions Units : mm • available in T 0 -2 2 0 FN package • Darlington connection provides high dc current gain (hFE) 2SB1568 (TO-220 FN) • damper diode is incorporated • built in resistors between base and emitter

2SB1340

Contextual Info: 2SB1340 Transistor, PNP Features • available in T0-220 FP SC-67 package • Darlington connection provides high dc current gain (hFE) Dimensions (Units : mm) • • 2SB1340 (TO-220 FP) damper diode is incorporated built in resistors between base and emitter

Contextual Info: 2SB1568 Transistor, PNP, Features Dimensions Units : mm • available in 7 0 -2 2 0 FN package • Darlington connection provides high dc current gain (hFE) • damper diode is incorporated • 2SB1568 (TO-220 FN) 10.0 J " built in resistors between base and