2SD239 Search Results

2SB1565

Abstract: 2SD2394
Contextual Info: JMnic Product Specification 2SB1565 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide SOA safe operating area ・Complement to type 2SD2394 PINNING PIN

2SB1565

Abstract: 2SD2394
Contextual Info: SavantIC Semiconductor Product Specification 2SB1565 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide SOA safe operating area ·Complement to type 2SD2394

2SD2390

Abstract: 2SB1560 HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2390 DESCRIPTION •With TO-3PN package ·Complement to type 2SB1560 ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION

2SB1568

Abstract: 2SD2399
Contextual Info: SavantIC Semiconductor Product Specification 2SB1568 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2399 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·For power amplifier applications

2SB1566

Abstract: 2SD2395
Contextual Info: SavantIC Semiconductor Product Specification 2SB1566 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide SOA safe operating area ·Complement to type 2SD2395

2SB1567

Abstract: 2SD2398
Contextual Info: SavantIC Semiconductor Product Specification 2SB1567 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2398 ·High DC current gain. ·DARLINGTON APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION

2SB1655

Abstract: 2SD2394
Contextual Info: Inchange Semiconductor Product Specification 2SB1655 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide area of safe operation ・Complement to type 2SD2394

2sd2397

Abstract: 2SD1866 2SD2143 2SD2212 T100 diode zener c05 transistor collector diode protection
Contextual Info: 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor Motor, Relay drive (60±10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 !External dimensions (Units : mm) 2SD2212 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) Built-in zener diode between collector and base.

2SD2398

Abstract: 2SB1567
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -2V, IC= -1A) ·Complement to Type 2SD2398 APPLICATIONS

2sD2394

Abstract: D348 transistor TI2150 marking HRA 2SD2576
Contextual Info: 2SD2167 2SD2394 / 2SD2576 Transistors I Power Transistor 31 ± 4 V , 2A 1) 2) 3) 4) Built-in zene r diode betw een collector and base. Z ener diode has low voltage dispersion. Strong protection against reverse pow er surges due to low loads. P c * 2 W (On 4 0 X 4 0 X 0 -7 m m ceram ic board)

Contextual Info: Transistors SMD Type Product specification 2SD2391 Features Low saturation voltage. Collector-emitter voltage =60V. PC=2 W on 40 40 0.7mm ceramic board . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage

2SB1566

Abstract: 2SD2395
Contextual Info: JMnic Product Specification 2SB1566 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide SOA safe operating area ・Complement to type 2SD2395 PINNING PIN

Contextual Info: 2SB1561 Datasheet PNP -2.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2.0A MPT3 Base Collector Emitter 2SB1561 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2391 3) Low VCE(sat) VCE(sat)= -0.35V(Max.)

D2395

Contextual Info: 2SB1566 2SD2395 Transistors Power Transistor —60V, —3A 2SB1566 I # Features # Absolute maximum ratings (Ta=25'C ) '1 ) Low Vce(sm>. (T yp .—0.3V at Ic /Ib » — 2 J — 0 .2A ) 2 ) W ide S O A (safe ope ratin g area). 3 ) C om plem ents th e 2S D2395.

2SD2576

Abstract: 2SD2394 D310 2SD2167 D348 transistor D348
Contextual Info: Transistors 2SD2167 2SD2394 / 2SD2576 92S-358–D310 (94L-1098-D348) 314

2SB1560

Abstract: 2SD2390 PNP IC 7A
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1560 DESCRIPTION •With TO-3PN package ·Complement to type 2SD2390 APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SD2395

Abstract: 2SB1566
Contextual Info: SavantIC Semiconductor Product Specification 2SD2395 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·Wide SOA safe operating area ·Complement to type 2SB1566 PINNING PIN DESCRIPTION 1 Base 2 Collector

2SD2391

Contextual Info: 2SD2391 h 7 > V 7s $ /Transistors 2SD2391 ï £ ° $ * ' > T J l s y i s - J - m N P N y V 3 > h ? Epitaxial Planar NPN Silicon Transistor Ei3€ ^ i f i lÜ £i/M ed iu m Power Amp. 1ii-îFi^tÆ 0/'Dim ensions Unit : mm 1) V C E O = 6 0 V T * 5 o 2) P c=2W T& 3o

Contextual Info: Medium Power Transistor 60V, 2A 2SD2391 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SB1561.

2SB1561

Abstract: 2SD2391 T100 60V2A
Contextual Info: Medium Power Transistor 60V, 2A 2SD2391 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SB1561.

D2399

Abstract: transistor 2a p
Contextual Info: 2SB1568 2SD2399 Transistors I Power Transistor —80V, —4A 2SB1568 •F e a tu re s 1) 2) 3) 4) •A b s o lu te maximum ratings (Ta=*25"C) D arlington conn ection for a high hpe. Buift-in resistor betw een base and em itter. Built-in dam per dokJe. C om plem ents th e 2S D2399.

2SD2399

Abstract: 2SD 438
Contextual Info: 2SD2399 Transistor, NPN, Darlington Features Dimensions Units : mm • available in TO-220FN package • Darlington connection provides high dc current gain (hFE) • • • • 2SD2399 (TO-220FN) damper diode is incorporated built-in resistors between base and

2SD2391

Abstract: 2SB1561 T100
Contextual Info: 2SD2391 Transistors Medium Power Transistor 60V, 2A 2SD2391 zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40x40×0.7mm ceramic board).

2SB1560

Abstract: 2SD2390
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2390 APPLICATIONS