HFE 118 Search Results

transistor mj11032 equivalent

Abstract: transistor mj11028 equivalent MJ11032 equivalent MJ11028-29 Transistor 3296 Variable Resistor 1k ohm 2SC493 AMPLIFIER 2SD718 2sb688 schematic 2sd717 MJ11030 equivalent BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc

Contextual Info: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1181 where ★ is hFE code and ta is lot number • high breakdown voltage and large current capability: VCE0 = -80 V, IC = -1 A • good hFE linearity

MTH13N50

Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50
Contextual Info: STI Type: MJE8502A Notes: Polarity: NPN Power Dissipation: 80 VCEV: 1200 VCEO: 700 ICEV: 1200 ICEV A: 1.0 hFE: 7.5 hFE A: 1.0 VCE: 2.0 VBE: 1.5 IC: 2.5 COB: 300 fT: 5.0 Case Style: TO-220AB/TO-220: Industry Type: MJE8502A STI Type: MJF16010A Notes: Polarity:

2SA988

Abstract: 2sa988 transistor A0222-6 1T0266 2SA9881 NEC 41-A 002 PA33 T108 T210 T540
Contextual Info: i s I Silicon Transistor # W-MM # f i : mm) it ffijfftigils, Ì É ì S l t x 4 v & 'y 'T , 50 mA i x-60# K 7 ï r f f l O L x \tm x $ t t o s b îœ , to mmmmvtifê.x'to ss hFE *>-?, 120 v V,CEO : - hFE (Ic = - 1.0 mA) : 500 T Y P . (Ta = 25 °C )

transistor 2sa988

Abstract: 2SA988 27-ti M5111 2sa988 transistor RUJ 17 33 PA33
Contextual Info: is I Silicon Transisto r *$ # i i : mm ) i t O ffijfftig ils , Ì É ì S l t x 4 v & ' y ' T , 50 mA i X 6 0 # K 7 ï r f f l L x \ t m t o s b îœ , x $ t to ss hFE *> -?, m m m m v * i $ è x t o V , CEO : - 120 v hFE (Ic = - 1.0 mA) : 500 T Y P .

STS9013

Abstract: Transistor TRANSISTOR 246 F 9016 transistor 9016 transistor transistor 9016 npn 9016 STS9012 transistor 9016 kst9016
Contextual Info: STS9013 Semiconductor NPN Silicon Transistor Descriptions • General purpose application. • Switching application. Features • Excellent hFE linearity. • Complementary pair with STS9012 Ordering Information Type NO. STS9013 Marking Package Code STS9013

STC9013N

Abstract: ksd 202 marking EB 202 diode STA9012N STA9012
Contextual Info: STA9012N Semiconductor PNP Silicon Transistor Description • General purpose application • Switching application Features • Excellent hFE linearity • Complementary pair with STC9013N Ordering Information Type NO. Marking Package Code STA9012N STA9012

KTC9012

Contextual Info: SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity. ・Complementary to KTC9013. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage

ksd 202

Abstract: marking EB 202 diode STA9012SF STC9013SF STA9012
Contextual Info: STC9013SF Semiconductor Epitaxial planar NPN silicon transistor Descriptions • General purpose application • Switching application Features • Excellent hFE linearity • Complementary pair with STA9012SF Ordering Information Type NO. Marking Package Code

STS9012

Abstract: Transistor TRANSISTOR 246 9015 transistor STS9013 transistor 9015 c 9015 PNP transistor 9015 9015 9015 TO-92
Contextual Info: STS9012 Semiconductor PNP Silicon Transistor Description • General purpose application. • Switching application. Features • Excellent hFE linearity. • Complementary pair with STS9013 Ordering Information Type NO. Marking STS9012 STS9012 Package Code

ksd 202

Abstract: marking EB 202 diode STA9012N STC9013N
Contextual Info: STC9013N Semiconductor Epitaxial planar NPN silicon transistor Descriptions • General purpose application • Switching application Features • Excellent hFE linearity • Complementary pair with STA9012N Ordering Information Type NO. Marking STC9013N Package Code

ksd 202

Abstract: marking EB 202 diode STA9012SF STC9013SF
Contextual Info: STA9012SF Semiconductor PNP Silicon Transistor Description • General purpose application • Switching application Features • Excellent hFE linearity • Complementary pair with STC9013SF Ordering Information Type NO. Marking Package Code STA9012SF 9A□

Contextual Info: 2 S B 1188 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1188; BC-*, where ★ is hFE code • • • 2SB1188 (MPT3) c -0.1 *0'2 4.5 1. 6 collector power dissipation, Pc = 2 W,

texas 2n3055

Abstract: BU108 2n3055 MJ15003 2SD424 BDX54 MJ2955 replacement 2n3055 replacement 2N5655 equivalent BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955* Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc

transistor K 3596

Abstract: TIP-106 motorola power transistor to-126 2N6109 equivalent MJE3055 TO-126 BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE700,T Plastic Darlington Complementary Silicon Power MJE702 Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 Typ @ IC = 2.0 Adc

2sa1046

Abstract: 2SD436 BD133 BD878 2SC1013 2SC1943 BD419 2SC1014 IR425 2sc2168
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDX33B BDX33C* Darlington Complementary Silicon Power Transistors PNP BDX34B BDX34C* . . . designed for general purpose and low speed switching applications. • High DC Current Gain — hFE = 2500 typ. at IC = 4.0

bdx54c equivalent

Abstract: BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc

bd775

Abstract: 2SC7 BD779 Diode BAY 61 bd776 MDS20 BD776-778-780 BUX98A AMPLIFIER 2SD718 2sb688 schematic MJW16010
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD777 PNP BD776 BD778 BD780 * Plastic Darlington Complementary Silicon Power Transistors . . . designed for general purpose amplifier and high–speed switching applications. • High DC Current Gain hFE = 1400 Typ @ IC = 2.0 Adc

Contextual Info: NTE2682 NPN & NTE2683 (PNP) Silicon Complementary Darlington Transistors Audio Power Output TO3PL Type Package Features: D High Forward Current Transfer Ratio, hFE D Low Collector−Emitter Saturation Voltage, VCE(sat) D Optimum for 120W HiFi Output Applications

KTC9012S

Abstract: KTC9013S
Contextual Info: SEMICONDUCTOR KTC9012S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity. 1 UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage

STS9013

Abstract: STS9012
Contextual Info: STS9013 NPN Silicon Transistor Descriptions PIN Connection • General purpose application. C • Switching application. B Features C B E • Excellent hFE linearity. • Complementary pair with STS9012 E TO-92 Ordering Information Type NO. STS9013 Marking

KTC9012

Contextual Info: SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity. ・Complementary to KTC9013. N K E G J D MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage

Contextual Info: SEMICONDUCTOR KTC9013 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity. ・Complementary to KTC9012. N K E G J D MAXIMUM RATING Ta=25℃ UNIT Collector-Base Voltage

KTC9013 transistor

Abstract: k 246 transistor KTC9012 KTC9013
Contextual Info: SEMICONDUCTOR KTC9013 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌExcellent hFE Linearity. ᴌComplementary to KTC9012. N E K G J D MAXIMUM RATING Ta=25ᴱ UNIT Collector-Base Voltage