HCF8 Search Results

M471B5673FH0-CF8

Abstract: M471B5673 ddr3 spd samsung M471B5673FH0-CF8/CH9/CK0
Contextual Info: SERIAL PRESENCE DETECT M471B5673FH0-CF8/CH9/CK0 Organization : 256M x 64 Composition : 128M x 8 * 16ea Used component part # : K4B1G0846F-HCF8/CH9/CK0 # of rows in module : 2 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component

samsung dimm DDR3 SPD

Abstract: CF701 inphi SSTE32882 HCH9 samsung DDR3 SDRAM 2GB GS-04 M393B1K70 RC10 RC11
Contextual Info: SERIAL PRESENCE DETECT M393B1K70BH1-CF701/CF801/CH901/CK001 Organization : 1G x 72 Composition : 512M x 4 * 36ea Used component part # : K4B2G0446B-HCF7/HCF8/HCH9/HCK0 # of rows in module : 2 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component

CF-800

Abstract: samsung DDR3 SDRAM 2GB CF700 HCF8 M471B5273CH0 CF800 CF-700 CH900 Samsung ddr3 1600 SDRAM k4b2g0846c
Contextual Info: SERIAL PRESENCE DETECT M471B5273CH0-CF700/CF800/CH900/CK000 Organization : 512M x 64 Composition : 256M x 8 * 16ea Used component part # : K4B2G0846C-HCF7/HCF8/HCH9/HCK0 # of rows in module : 2 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component

SSTE32882

Abstract: samsung dimm DDR3 SPD HCH9 CF804 LVDDR3 K4B1G0846E samsung ddr3 RC10 RC11 RC12
Contextual Info: SERIAL PRESENCE DETECT M393B5673EH1-CF704/CF804/CH904/CK004 Organization : 256M x 72 Composition : 128M x 8 * 18ea Used component part # : K4B1G0846E-HCF7/HCF8/HCH9/HCK0 # of rows in module : 2 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component

inphi

Abstract: samsung dimm DDR3 SPD DDR3 DIMM SPD JEDEC samsung DDR3 SDRAM 2GB ddr3 spd samsung samsung ddr3 RC10 RC11 RC12 K4B2G0446B-HCF7
Contextual Info: SERIAL PRESENCE DETECT M393B5270BH1-CF701/CF801/CH901/CK001 Organization : 512M x 72 Composition : 512M x 4 * 18ea Used component part # : K4B2G0446B-HCF7/HCF8/HCH9/HCK0 # of rows in module : 1 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component

samsung dimm DDR3 SPD

Abstract: SSTE32882 inphi samsung ddr3 RC10 RC11 RC12 HCH9 ddr3 spd samsung inphi* rcd
Contextual Info: SERIAL PRESENCE DETECT M393B5673EH1-CF701/CF801/CH901/CK001 Organization : 256M x 72 Composition : 128M x 8 * 18ea Used component part # : K4B1G0846E-HCF7/HCF8/HCH9/HCK0 # of rows in module : 2 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component

M471B5673FH0-CF8

Abstract: M471B5673FH0 ddr3 samsung M471B5673 samsung ddr3 2010 K4B1G0846F-HCF8 M471B5673fH ddr3 spd samsung DDR3 SPD
Contextual Info: SERIAL PRESENCE DETECT M471B5673FH0-CF8/CH9/CK0 Organization : 256M x 64 Composition : 128M x 8 * 16ea Used component part # : K4B1G0846F-HCF8/CH9/CK0 # of rows in module : 2 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component

M471B2873FHS-CF8

Abstract: K4B1G0846F-HCF8 M471b2873fhs M471B2873FHS-C K4B1G0846F ddr3 spd samsung DDR3 SODIMM SPD JEDEC
Contextual Info: SERIAL PRESENCE DETECT M471B2873FHS-CF8/CH9/CK0 Organization : 128M x 64 Composition : 128M x 8 * 8ea Used component part # : K4B1G0846F-HCF8/CH9/CK0 # of rows in module : 1 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component

M378B5673FH0-CF8

Abstract: samsung dimm DDR3 SPD m378b5673fh0-c K4B1G0846F-HCF8 110ns SPD 130 ddr3 samsung HCH9 ddr3 spd samsung
Contextual Info: SERIAL PRESENCE DETECT M378B5673FH0-CF8/CH9/CK0 Organization : 256M x 64 Composition : 128M x 8 * 16ea Used component part # : K4B1G0846F-HCF8/HCH9/HCK0 # of rows in module : 2 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component

M471B1G73AH0-CF8

Abstract: DDR3 4gb jedec spd byte samsung ddr3 DDR3 sodimm 4gb samsung K4B4G0846 M471B1G K4B4G0846A HCH9 ddr3 spd samsung 1333C
Contextual Info: SERIAL PRESENCE DETECT M471B1G73AH0-CF8/CH9/CK0 Organization : 1G x 64 Composition : 512M x 8 * 16ea Used component part # : K4B4G0846A-HCF8/HCH9/HCK0 # of rows in module : 2 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component

LF3310

Abstract: 3310 h5 LIFO VCF9 VCF11
Contextual Info: LF3310 LF3310 DEVICES INCORPORATED Horizontal / Vertical Digital Image Filter Horizontal / Vertical Digital Image Filter DEVICES INCORPORATED FEATURES DESCRIPTION ❑ 83 MHz Data Rate ❑ 12-bit Data and Coefficients ❑ On-board Memory for 256 Horizontal

LF3310

Abstract: RH15 RV15 SV15
Contextual Info: LF3310 LF3310 DEVICES INCORPORATED Horizontal / Vertical Digital Image Filter Horizontal / Vertical Digital Image Filter DEVICES INCORPORATED FEATURES DESCRIPTION ❑ 80 MHz Data Rate ❑ 12-bit Data and Coefficients ❑ On-board Memory for 256 Horizontal and Vertical Coefficient Sets

Contextual Info: LF3310 LF3310 DEVICES INCORPORATED Horizontal / Vertical Digital Image Filter Horizontal / Vertical Digital Image Filter DEVICES INCORPORATED FEATURES DESCRIPTION ❑ 83 MHz Data Rate ❑ 12-bit Data and Coefficients ❑ On-board Memory for 256 Horizontal

Contextual Info: LF3310 LF3310 DEVICES INCORPORATED Horizontal / Vertical Digital Image Filter Horizontal / Vertical Digital Image Filter DEVICES INCORPORATED FEATURES DESCRIPTION 83 MHz Data Rate 12-bit Data and Coefficients On-board Memory for 256 Horizontal and Vertical Coefficient Sets

K4T1G164QF

Abstract: 1GB DDR2 4 banks K4T51083QI-HCE7 K4T51163QI K4T1G164QQ-HC k4t51083qi m470t5663 K4T1G164QE samsung ddr2 240pin 1gb K4T1G164QE-HC
Contextual Info: Apr. 2010 DDR2 SDRAM Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.

R8810A1018

Abstract: r6660d BDR91 HC60NG hb85 HCF82 boiler CE880 TEMPERATURE CONTROLLER r6660d communication relay
Contextual Info: Application Manual 1 Content 1. 1.1 Wireless communication. 3

Contextual Info: LF3310 Horizontal /V e rtic a l Digital Image Filter □ 80 MHz Data Rate □ 12-bit Data and Coefficients □ On-board Memory for 256 Horizon­ tal and Vertical Coefficient Sets □ LF Interface Allows All 512 Coefficient Sets to be Updated Within Vertical Blanking

syntron rectifier

Abstract: 2CL2FP SM3F HGUF10 WESTINGHOUSE RECTIFIERS ct 4a05 4a05 Syntron syntron diode 2CL106
Contextual Info: B D O O O N TH O T C R O EM P Y O VE Manufacturers of • ■ ■ ■ ■ CAN’T FIND WHAT YOU NEED? CALL US. CUSTOM DESIGN IS OUR SPECIALTY. HIGH VOLTAGE DIODES MOVS TVSS DEVICES SELENIUM SUPPRESSORS SILICON CARBIDE SUPPRESSORS ■ HIGH VOLTAGE HIGH CURRENT ASSEMBLIES

743H

Abstract: VCF9 3310 DIODE DATASHEET LF3310 SH15
Contextual Info: LF3310 LF3310 DEVICES INCORPORATED Horizontal / Vertical Digital Image Filter Horizontal / Vertical Digital Image Filter DEVICES INCORPORATED FEATURES DESCRIPTION ❑ 83 MHz Data Rate ❑ 12-bit Data and Coefficients ❑ On-board Memory for 256 Horizontal

TF331

Abstract: tf-331 VCF9
Contextual Info: LF3310 *- — •—- - IJbVIÜI-S INuuHHÜKA IH □ 83 MHz Data Rate □ 12-bit Data and Coefficients □ On-boand Memory for 256 Horizon­ tal and Vertical Coefficient Sets □ LF Interface Allows All 512 Coefficient Sets to be Updated Within Vertical Blanking

k4B2G1646

Abstract: K4S561632N K4B2G1646C k4t1g164qf K4T51163QI K4H641638Q K4B2G16 K4B2G1646C-HQH9 K4T1G084QF k4s281632O
Contextual Info: Apr. 2010 Consumer Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.

3HCF10

Abstract: fast recovery bridge rectifier ultraFast Recovery Bridge Rectifier HCF10 HCF12 HCUF10 HCUF12 HCUF15 27Ob
Contextual Info: 27 ü bñ 4b 0 0 0 0 1 7 0 SERIES 33ä , 5 to 15 KV 3HCF —I W Q ^ I— 0 6 to 2 0 Amps HCUF _ I 75,150, 250 ns. Recovery Figure 1 Please Note: For Solder Turrets Add Suffix “T” All dimensions in inches. High Voltage Rectifier Blocks

3HGD15

Abstract: HG20 3HC5 Rectifier 6 amp 400 volt 3HC10 3HC15 3HCF10 HC10 HC12 HC15
Contextual Info: HG, HC-Rectifier Blocks High Voltage, Mounting Slots HVCA Number Repetitive Peak Reverse Voltage Avg. Forward Current Max. VRRMP e rL S V Volts ' f av m C - M -C A (Amps) Max. Forward Voltage Drop Vp (fr | p Per Leg Max. Reverse Current Ip (& Vpmy| (S' 25^C

3HC10

Abstract: 3HC15 3HCF10 HC10 HC12 HC15 HC20 HCF10 HCF12 HCUF10
Contextual Info: HG, HC-RECTIFIER BLOCKS HIGH VOLTAGE, MOUNTING SLOTS HVCA Number Repetitive Peak Reverse Voltage VRRM Per Leg V Volts Avg. Forward Current Max. IFAVM@55°C A (Amps) Max. Forward Voltage Drop VF@IF Per Leg V(Volts) Max. Reverse Current IR@VRRM@25°C mA (microAmps)