HBC8 Search Results
HBC8 Datasheets (9)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| HBC800 | Absopulse Electronics | Power, 800W Power Supply In 5 x 5 x 11.5 Package | Original | 157.85KB | 1 | ||
| HBC807 | Hi-Sincerity Mocroelectronics | PNP Epitaxial Planar Transistor | Original | 29.64KB | 3 | ||
| HBC817 | Hi-Sincerity Mocroelectronics | NPN Epitaxial Planar Transistor | Original | 28.77KB | 3 | ||
| HBC846 | Hi-Sincerity Mocroelectronics | NPN Epitaxial Planar Transistor | Original | 30.03KB | 3 | ||
| HBC847 | Hi-Sincerity Mocroelectronics | NPN EPITAXIAL PLANAR TRANSISTOR | Original | 30.02KB | 3 | ||
| HBC848 | Hi-Sincerity Mocroelectronics | NPN Epitaxial Planar Transistor | Original | 30.01KB | 3 | ||
| HBC856 | Hi-Sincerity Mocroelectronics | PNP Epitaxial Planar Transistor | Original | 29.55KB | 3 | ||
| HBC857 | Hi-Sincerity Mocroelectronics | PNP Epitaxial Planar Transistor | Original | 29.8KB | 3 | ||
| HBC858 | Hi-Sincerity Mocroelectronics | PNP Epitaxial Planar Transistor | Original | 30.32KB | 3 |
HBC8 Price and Stock
KEMET Corporation PHBC8S-0R6A0024VInductor: wire; THT; 24uH; 2A; R: 41.1mΩ; -40÷125°C |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PHBC8S-0R6A0024V | 100 | 1 |
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PHBC8S-0R6A0024V | Tray | 62 Weeks | 700 |
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PHBC8S-0R6A0024V | 140 |
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PHBC8S-0R6A0024V | Bulk | 50 | 1 |
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PHBC8S-0R6A0024V | Bulk | 700 |
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PHBC8S-0R6A0024V | 26 Weeks | 700 |
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KEMET Corporation HHBC8S-0R6A0067VInductor: wire; THT; 67uH; 2A; R: 67.8mΩ; -40÷120°C |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HHBC8S-0R6A0067V | 100 | 1 |
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HHBC8S-0R6A0067V | Tray | 700 |
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HHBC8S-0R6A0067V |
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HHBC8S-0R6A0067V | Bulk | 96 | 1 |
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HHBC8S-0R6A0067V | Bulk | 700 |
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HHBC8S-0R6A0067V | 26 Weeks | 700 |
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KEMET Corporation HHBC8S-0R6A0043VInductor: wire; THT; 43uH; 2A; R: 54.1mΩ; -40÷120°C |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HHBC8S-0R6A0043V | 100 | 1 |
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Buy Now | ||||||
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HHBC8S-0R6A0043V | Tray | 700 |
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HHBC8S-0R6A0043V | 66 |
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HHBC8S-0R6A0043V | Bulk | 118 | 1 |
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HHBC8S-0R6A0043V | Bulk | 700 |
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HHBC8S-0R6A0043V | 26 Weeks | 700 |
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Get Quote | ||||||
KEMET Corporation HHBC8S-0R6A0024VInductor: wire; THT; 24uH; 2A; R: 41.1mΩ; -40÷120°C |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HHBC8S-0R6A0024V | 96 | 1 |
|
Buy Now | ||||||
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HHBC8S-0R6A0024V | Tray | 700 |
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Buy Now | ||||||
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HHBC8S-0R6A0024V | 1 |
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Buy Now | |||||||
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HHBC8S-0R6A0024V | Bulk | 132 | 1 |
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HHBC8S-0R6A0024V | Bulk | 700 |
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Get Quote | ||||||
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HHBC8S-0R6A0024V | 26 Weeks | 700 |
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Get Quote | ||||||
KEMET Corporation PHBC8S-0R6A0043VInductor: wire; THT; 43uH; 2A; R: 54.1mΩ; -40÷125°C |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PHBC8S-0R6A0043V | 1 |
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Get Quote | |||||||
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PHBC8S-0R6A0043V | Tray | 62 Weeks | 700 |
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Buy Now | |||||
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PHBC8S-0R6A0043V | 16 |
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PHBC8S-0R6A0043V | Bulk | 44 | 1 |
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Buy Now | |||||
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PHBC8S-0R6A0043V | Bulk | 700 |
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Get Quote | ||||||
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PHBC8S-0R6A0043V | 26 Weeks | 700 |
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Get Quote | ||||||
HBC8 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
HBC848Contextual Info: HI-SINCERITY Spec. No. : HE6843 Issued Date : 1994.07.29 Revised Date : 2008.01.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC848 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. |
Original |
he6843hbc848ot-23diss60+4 | |
HE6851
Abstract: HBC858
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Original |
he6851hbc858ot-23183oc+2 | |
800w inverter
Abstract: HBC800 PFC1000 AC to DC converter 800W
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Original |
hbc8002v/65a4v/33a8v/16a+3 | |
HBC807Contextual Info: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2004.08.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages. |
Original |
he6830hbc807ot-23200oc+4 | |
HBC847Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6827 Issued Date : 1993.11.28 Revised Date : 2002.10.24 Page No. : 1/3 HBC847 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC847 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. |
Original |
he6827hbc847ot-23 | |
HBC817Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/3 HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages. |
Original |
he6831hbc817ot-23 | |
HBC817
Abstract: hbc8
|
Original |
he6831hbc817ot-23183oc+4 | |
HE6851
Abstract: HBC858
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Original |
he6851hbc858ot-23 | |
HBC847Contextual Info: HI-SINCERITY Spec. No. : HE6827 Issued Date : 1993.11.28 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HBC847 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC847 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. |
Original |
he6827hbc847ot-23183oc+2 | |
HBC807
Abstract: marking 9fb 9FC SOT23
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Original |
he6830hbc807ot-23marking 9fb+1 | |
HBC857Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6829 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/3 HBC857 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC857 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. |
Original |
he6829hbc857ot-23 | |
HBC846Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6828 Issued Date : 1993.12.07 Revised Date : 2002.10.24 Page No. : 1/3 HBC846 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC846 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. |
Original |
he6828hbc846ot-23 | |
HBC856
Abstract: MARKING 9AB marking 9aa 9aa marking hbc8
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Original |
he6832hbc856ot-23183oc+6 | |
marking 8AA
Abstract: HBC846
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Original |
he6828hbc846ot-23183oc+3 | |
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HBC856Contextual Info: HI-SINCERITY Spec. No. : HE6832 Issued Date : 1994.02.03 Revised Date : 2002.10.24 Page No. : 1/3 MICROELECTRONICS CORP. HBC856 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC856 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. |
Original |
he6832hbc856ot-23 | |
HBC848
Abstract: hbc8
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Original |
he6843hbc848ot-23hbc8 | |
88 kv cable
Abstract: 30709 lighting fixture high temperature
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Original |
347-480vac240vacmdtfsfsthb00188 kv cable+2 | |
hbd2c4n
Abstract: HBDGCMN
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Original |
catalogs/illumination/mdtfhzchb001mdtfhzchb001hbd2c4nhbdgcmn | |
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Contextual Info: SafeSite LED High Bay - UL 844 for Indoor and Outdoor Hazardous Locations Patent Pending SafeSite® LED High Bay Features & Benefits • L70 rated for >100,000 hours @ 25°C • 5 & 10 year full performance warranty • Up to 104lm/W • Low T rating compared to |
Original |
104lm/w00-277v50/60hzcatalogs/illumination/mdtfhzchb001+1 | |
KTH-1000
Abstract: HP8648C KTH1000 1855A HBC1505A 179DT
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Original |
bd17900hbc1694ahp8648ckth-1000+4 | |
schematic diagram usb flash ram
Abstract: 1N9013 Alcor Micro micro pc 2002 schematic flash disk AU9321 flash card reader schematic mp3 player schematic diagram 10UF AU9320
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Original |
au9321schematic diagram usb flash ram1n9013alcor micro+6 | |
HB7C4MContextual Info: Dialight LED Lighting Fixture Catalog for Indoor and Outdoor Industrial and Hazardous Locations About Dialight Dialight LSE: DIA.L is leading the energy efficient LED lighting revolution around the world for industrial and hazardous areas. For more than 40 years, it has been committed to the development of LED lighting solutions that enable |
Original |
mdtfshcatx001hb7c4m | |
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Contextual Info: SafeSite Series LED High Bay for Indoor and Outdoor Hazardous Locations Patent Pending SafeSite® LED High Bay Features & Benefits • L70 rated for >100,000 hours @ 25°C • 5 & 10 year full performance warranty • Up to 102lm/W • Low T rating compared to |
Original |
102lm/w00-277v50/60hzcatalogs/illumination/mdtfhzchb001+1 | |
LB121A
Abstract: TIF42C JAPAN transistor TIF41C TIF32C HE9013H transistor EBC 3904 3842P SC2625 BD238 EV
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OCR Scan |
bt1815hmbt1q15bt2222abt2907a+16 | |