HE6830 Search Results
HE6830 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
HBC807Contextual Info: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2004.08.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages. |
Original |
he6830hbc807ot-23200oc+4 | |
HLB122JContextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.05.08 Page No. : 1/4 HLB122J NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122J is a medium power transistor designed for use in |
Original |
he6830hlb122jo-252 | |
HJ649AContextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.04.03 Page No. : 1/3 HJ649A PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ649A is designed for low frequency power amplifier. Absolute Maximum Ratings Ta=25°C |
Original |
he6830hj649ao-252 | |
HI123Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830-A Issued Date : 1994.01.25 Revised Date : 1999.08.01 Page No. : 1/2 HI123 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI123 is designed for high voltage, high speed switching Circuits, and amplifier applications. |
Original |
he6830-ahi123 | |
marking A1 TRANSISTOR
Abstract: HJ667A Y2 MARKING a5 marking
|
Original |
he6830hj667ao-252183oc+5 | |
HJ667AContextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830-A Issued Date : 1994.01.25 Revised Date : 2000.11.01 Page No. : 1/2 HJ667A PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ667A is designed for low frequency power amplifier. Absolute Maximum Ratings Ta=25°C |
Original |
he6830-ahj667a | |
HJ669AContextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830-A Issued Date : 1994.01.25 Revised Date : 2000.11.01 Page No. : 1/2 HJ669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ669A is designed for low frequency power amplifier. Absolute Maximum Ratings Ta=25°C |
Original |
he6830-ahj669a | |
HBC807
Abstract: marking 9fb 9FC SOT23
|
Original |
he6830hbc807ot-23marking 9fb+1 | |
A1 marking code amplifier
Abstract: marking A1 TRANSISTOR HJ669A Y2MARKING
|
Original |
he6830hj669ao-252183oc+5 | |
transistor marking code 12W 80
Abstract: transistor marking code 12W marking code 12W transistor IC350 HJ6718
|
Original |
he6830-ahj6718transistor marking code 12w 80transistor marking code 12w+2 | |
HBC807
Abstract: HBC817
|
Original |
he6830hbc807ot-23-800ma+5 |