HB75 Search Results

IEC61204-3

Contextual Info: BTCPower TM HB75D-24 Series Broadband TelCom Power, Inc. Redefining “Current” Limits In Power Conversion 24Vin Dual Output 15/15A Half Bricks Description The HB75D-24 series of low cost DC/DC converters offer the different current levels and are comparable to existing

HB75

Abstract: IEC61204-3 24-05N
Contextual Info: BTCPower TM Broadband TelCom Power, Inc. Redefining “Current” Limits In Power Conversion Technical Specification HB75-24 Series 24Vin 2.5, 3.3, 5.0, 12, 15, 24Vout 75W Description Features The HB75 Series of low cost half brick DC/DC converters are comparable to existing half-bricks. They

HB75

Contextual Info: HB75 37.5 to 75 WATT WIDE INPUT DC/DC CONVERTERS SINGLE OUTPUT Features: l37.5W - 75 W Isolated Output lEfficiency to 85% l300KHz Switching Frequency l2:1 Input Range lRegulated Outputs MODEL NUMBER HB75-12S25 HB75-12S33 HB75-12S05 HB75-12S12 HB75-12S15 HB75-12S24

HB75

Abstract: IEC61204-3
Contextual Info: BTCPower TM Broadband TelCom Power, Inc. Redefining “Current” Limits In Power Conversion Technical Specification HB75-48 Series 48Vin 2.5, 3.3, 5.0, 12, 15, 24Vout 75W Description Features The HB75 Series of low cost half brick DC/DC converters are comparable to existing half-bricks. They

IEC61204-3

Contextual Info: BTCPower TM Broadband TelCom Power, Inc. Redefining “Current” Limits In Power Conversion Technical Specification HB75-12 Series 12Vin 2.5, 3.3, 5.0, 12, 15, 24Vout 75W Description Features The HB75-12 Series of low cost half brick DC/DC converters are comparable to existing half-bricks. They

IEC61204-3

Contextual Info: BTCPower TM HB75D-48 Series Broadband TelCom Power, Inc. Redefining “Current” Limits In Power Conversion 48Vin Dual Output 15/15A Half Bricks Description The HB75D-48 series of low cost DC/DC converters offer the different current levels and are comparable to existing

btcpower

Abstract: IEC61204-3
Contextual Info: BTCPower TM Broadband TelCom Power, Inc. HB75D Series Redefining “Current” Limits In Power Conversion Dual Output 15/15A Half Bricks Description The HB75D series of low cost DC/DC converters offer the different current levels and are comparable to existing

Contextual Info: HB50 & HB75 Series 50 - 75 Watt High Density Efficiency typ. 84% @ 5V / 15A Power Density 27.4 W/in3 Constant Frequency Industry Standard Pinout Metal Base Plate 34 - 75 Input Voltage Range Remote Sense Remote on/off Output Voltage Adjustable ±10% Thermal Shutdown

IEC61204-3

Abstract: 1212n 10a15a HB50-12-05 HB50-12-12 HB50-12-25 HB50-12-33
Contextual Info: BTCPower TM Broadband TelCom Power, Inc. HB 12 Series Redefining “Current” Limits In Power Conversion Up to 15A Low Cost Half Bricks Description The HB 12 series of low cost DC/DC converters offer the different current levels and are comparable to existing

SM980

Contextual Info: Products & Services 2015 FIBERCORE FIBERCORE Contents SECTION SECTION PAGE 1 About Fibercore Which fiber for which application? 6 - 11 2 SM Fiber for Harsh Environments, Ultra Bend Insensitive, RGB and Near Infra Red SM Fiber For Visible RGB Through To Near IR

721 KXC

Abstract: moc 3048
Contextual Info: «HYUNDAI H Y 6 2 V 8 1 0 0 A 128K S e r ie s CMOS SRAM X 8 -b it PRELIMINARY DESCRIPTION The HY62V8100A is a high-speed, low power and 131.072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V8100A has a data retention mode that

LD33

Abstract: ld33 c LD33 F LD33 V HY6264ALP70 LD33 e LD33 voltage 1DB01 HY6264ALJ-70 Hy6264alp-70
Contextual Info: HY6264A Series ‘H YU N D AI 8 K x 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits C M O S static R A M fabricated using Hyundai's high performance twin tub C M O S process technology. This high reliability process coupled with innovative circuit

DML D01

Contextual Info: HYUNDAI HY514810B Series 5 1 2 K x 8 - b it C M O S DRAM w ith W r ite -P e r - B II PRELIMINARY DESCRIPTION The HY51481 OB is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51481 OB utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: H Y 6 7 V 1 8 1 1 0 /1 1 1 64K X 18 Bit SYNCHRONOUS CMOS SRAM -HYUNDAI PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst ad­ dress counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a positiveedge triggered clock K .

Contextual Info: HY51V16400A Series HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: “HYUNDAI HYM5V64124A R-Series Unbuffered 1M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOR-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 j.F

hy5118164b

Contextual Info: “H Y U N D A I HY5118164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5118164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HV5118164B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands

Contextual Info: mH Y II N U It I A 1 V I I U I I B I 4 M x 1 6 b it S y n c h r o n o u s D R A M S e r ie s HY57V641610/ HY57V641620/ HY57V651610/ HY57V651620 HY57V641611/ HY57V641621/ HY57V651611/ HY57V651621 PRELIMINARY DESCRIPTION HY57V641610 2Mbit X 2bank x 16 I/O, LVTTL

HY51V16404B

Abstract: HY51V16404BR60 si17 MH-750
Contextual Info: •HYUNDAI HY51V16404B Series 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION TheHY51V16404B is the new generation and fast dynamic RAM organizecU,194,304 x 4-bit. The HY51V16404B utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

P55i

Abstract: B0000h-BFFFF
Contextual Info: • HYUNDAI HY29F800 Series 1M x 8-bit / 512K x 16-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V 1 10% Read, Program, and Erase - Minimizes syslem-level power requirements • Compatible with JEDEC-Standard Commands - Uses software commands, pinouts, and

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

Contextual Info: HY HYUNDAI 514403B Series 1M x 4-bit CMOS DRAM with 4CAS DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO) controls DQO,

Contextual Info: HYM532414A M-Series •HYUNDAI 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414A is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 ^decoupling capacitors are mounted