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    HAT2203C Search Results

    HAT2203C Datasheets (1)

    Renesas Technology
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    HAT2203C
    Renesas Technology Transistors> Switching/MOSFETs Original PDF 110.13KB 7
    SF Impression Pixel

    HAT2203C Price and Stock

    Renesas Electronics Corporation

    Renesas Electronics Corporation HAT2203C-EL-E

    Trans MOSFET N-CH Si 20V 2A 6-Pin CMFPAK T/R
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    Verical HAT2203C-EL-E 9,000 1,233
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    Rochester Electronics HAT2203C-EL-E 9,000 1
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    HAT2203C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HAT2203C

    Abstract: HAT2203C-EL-E
    Contextual Info: HAT2203C Silicon N Channel MOS FET Power Switching REJ03G0447-0400 Rev.4.00 May 19.2005 Features • Low on-resistance RDS on = 69 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A


    Original
    hat2203crej03g0447-0400pwsf0006ja-anote-900+2unit2607hat2203c-el-e PDF

    Contextual Info: Preliminary Datasheet HAT2203C R07DS0323EJ0600 Rev.6.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS on = 69 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device


    Original
    hat2203cr07ds0323ej0600pwsf0006ja-an2886-9022/9044 PDF

    Contextual Info: Preliminary Datasheet HAT2203C R07DS0323EJ0500 Previous: REJ03G0447-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 69 m typ.(at VGS = 4.5 V)  Low drive current  High density mounting


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    hat2203cr07ds0323ej0500rej03g0447-0400pwsf0006ja-a PDF

    HAT2203C

    Abstract: HAT2203C-EL-E
    Contextual Info: HAT2203C Silicon N Channel MOS FET Power Switching REJ03G0447-0300 Rev.3.00 Sep.19.2004 Features • Low on-resistance RDS on = 69 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device Outline CMFPAK - 6 2 3 4 5


    Original
    hat2203crej03g0447-0300t-900unit2607+1hat2203c-el-e PDF

    Contextual Info: Preliminary Datasheet HAT2203C R07DS0323EJ0500 Previous: REJ03G0447-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 69 m typ.(at VGS = 4.5 V)  Low drive current  High density mounting


    Original
    hat2203cr07ds0323ej0500rej03g0447-0400pwsf0006ja-a PDF

    HAT2203C-EL-E

    Abstract: HAT2204C
    Contextual Info: HAT2204C Silicon N Channel MOS FET Power Switching REJ03G0448-0300 Rev.3.00 Sep.19.2004 Features • Low on-resistance RDS on = 26m Ω typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 1.8 V gate drive device Outline CMFPAK - 6 2 3 4 5


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    hat2204crej03g0448-0300t-900unit2607+1hat2203c-el-e PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


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    r07cs0003ej0100rjp63k2rjp63f3rjp30e2+7rjp30h2rjj0319dsprjp63frjp30h3rjj0319bcr1am-12a equivalentrjj0606 PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


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    2sc5998c51392sc52472sc5907+162sd15042sj3612sk4392sk4942sk3349bcr5km-12l1002ds6020v4transistor bj 131-62sc 8550transistor 2sc1417hitachi 08122btransistor h9456030v42sc 805025aaj PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


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    rej01g0001-0400rjh3047rjh3077rjp3047+7rjh3047dpkrjp3049rjp6065rjp3053rjp3042smd code fx mosfetrjp6055 PDF

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


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    r07cs0003ej0200rjj0319dspbcr8pm equivalentrjp30h2+7n0201rjj0319np109n055pujrjk5020rjp30e2dppnp75n04yuglg washing machine circuit diagram PDF

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


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    rjp6065rjp6006rjp3053rjh60f5+6transistor smd marking code jgbcr1am-12a equivalentrjh60f7rjp3063triac kt 207 600vrjp6006dpk PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


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    rej16g0001-1900rjp3053rjp3063rjp6065+7rjp2557rjp3057rjh30rqj0301rjp3065rjk5020rjk2009 PDF

    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Contextual Info: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


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    rej13g0003-2701rjh60f5rjh60f7r2j240+7r2j24020hat2292chat2286chat1146crjh60rjh60d7rjh60f7adpk PDF

    HAT2203C

    Abstract: HAT2203C-EL-E
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    d-900unit2607hat2203chat2203c-el-e PDF

    temperature controller CHB 401

    Abstract: 1FW 55 transistor 1FW transistor 1FW 10 transistor
    Contextual Info: Power Supply IC S1F81150F*C0000 Technical Manual f NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.


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    s1f81150fc0000temperature controller chb 4011fw 55 transistor+21fw transistor1fw 10 transistor PDF

    H7N1009MD

    Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
    Contextual Info: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility


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    cr3km-12cr6km-12cr8km-12o-220fn+16ot-89cr03am-16cr04am-12sc-59cr03am-12cr05am-12h7n1009mdhat2153rjtransistor fs10kmhat2180rpdiode h5nh7p1006mdimmobilizer antennacr3as-12hat1081rcr3as PDF

    Contextual Info: HAT2204C Silicon N Channel MOS FET Power Switching REJ03G0448-0400 Rev.4.00 May 19.2005 Features • Low on-resistance RDS on = 26m Ω typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 1.8 V gate drive device Outline RENESAS Package code: PWSF0006JA-A


    Original
    hat2204crej03g0448-0400pwsf0006ja-aunit2607 PDF