HAMMARLUND Search Results

Contextual Info: h a r CA3049,J CA3102 ® S E M I C O N D U C T O R Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz N o vem b er 1996 Features Description • Power Gain 23dB T y p . 200MHz T he C A 3 0 4 9 T and C A 3 10 2 co n sist o f tw o in de pen de nt

CA3102

Abstract: CA3102E CA3102M CA3102MZ FN611
Contextual Info: CA3102 Data Sheet October 12, 2005 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which

CA3049T

Abstract: TA6228 CA3102E CA3102M 430Z271 CA3102 equivalent ca3049
Contextual Info: HARRIS SEfUCOND SECTOR L.1E D • 430BZ71 OOMb^bS 1,31 B H A S C A 3 0 4" 9 , C A ^3 1 0 2 w ^ J ^ m fE H a r r is S E M I C O N D U C T O R Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz March 1993 Features Description

CA3049T

Abstract: A3102 transistor j307 3049T CA3102 J307
Contextual Info: CA3049, CA3102 ¡3 Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz November 1996 Features Description • Power Gain 23dB T yp . 200MHz The C A 3049 T and C A 3 102 consist of two independent

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

L66C

Abstract: C1f TRANSISTOR ECG906 transistor HJ 388 MAC15
Contextual Info: E C G INC PHILIPS 17 E D • bL.S3‘iSfl O D O a S T I ECG906 DUAL HIGH-FREQUENCY DIFFERENTIAL AMPLIFIER semiconductors For Low-Power Applications at Frequencies up to 500 MHz •32O 0 - ^ ECG906 conilsts o f two Independent differential amplifiers w ith associated constant-current tran­

J307

Abstract: ca3102e CA3102 ca3102 diff amp
Contextual Info: NS E SI G D W T EN R NE D FO PLACEM ter at E D N E n MME r t Ce ED R tsc ECO MMEND l Suppo sil.com/ R T a r O c Data Sheet e i t NO EC hn .in NO R our Tec or www t L c I a cont -INTERS 8 1-88 Dual High Frequency Differential Amplifier For Low Power Applications Up to

Horizontal Transistor TT 2246

Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
Contextual Info: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

CA3102

Abstract: CA3102E CA3102M MS-012-AB
Contextual Info: CA3102 Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which

J307

Abstract: transistor j307 A3049 CA3049T CA3102 equivalent CA3049
Contextual Info: •A3049, CA3102 CO^ ca" OÏ a 'v * e v t'“ Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz DecaTlßer 1998 Features Description • Power Gain 23dB T y p . 200MHz The CA3049T and CA3102 consist of two independent

2N5849 motorola

Abstract: 2N5849 K1245 vk200 rfc with 6 turns ti211 TRANSISTOR motorola 838 RNW transistor
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D L3fci7254 OCHMlOl MOTOROLA T • MOTb 7^33-¿3 ■ SEM ICONDUCTOR ■ TECHNICAL DATA 2N5849 T h e R F L in e 40 W-50 MHz RF POWER T R A N SIST O R NPN SIL IC O N NPN SILIC O N RF POWER T R A N SIST O R designed p rim a rily for use in large signal am plifie r o u t p u t stages,

TA6228

Abstract: CA3102 equivalent
Contextual Info: h a r r is CA3049, CA3102 S E M I C O N D U C T O R • W W ■ Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz March 1993 Features Description • Power Gain 23dB Typ . 200MHz The CA3049T and CA3102* consist of two independent

in5388

Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
Contextual Info: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor

CA3049T

Abstract: ca3049 CA3102 J307 CA3102 equivalent CA3102E CA3102M I9 transistor CA3102M96 m1k8
Contextual Info: S E M I C O N D U C T O R CA3049, CA3102 Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz November 1996 Features Description • Power Gain 23dB Typ . . . . . . . . . . . . . . . . . . . 200MHz The CA3049T and CA3102 consist of two independent

CA3102

Abstract: CA3102E CA3102M MS-012-AB diode b22 L 321 t
Contextual Info: CA3102 TM Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which

Contextual Info: CA3102 Semiconductor Data Sheet February 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz File Num ber 611.5 Features • Power Gain 23dB Typ . 200MHz • Noise Figure 4.6dB (T y p ). 200MHz

CA3049T

Abstract: ca3049 transistor j307 CA3102 CA3102E TA6228 car Amplifier schematic diagrams 12v A3102 CA3102M J307
Contextual Info: A3049, CA3102 Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz D eo Features Description • Power Gain 23dB T y p . 200MHz The CA3049T and CA3102 consist of two independent differential amplifiers with associated constant current

TRIAC RCA ca3058

Abstract: rca ca3240E CA311G CA101AT CA124G sn76013 CA1310 CA555CG Fuji Electric tv schematic diagram 40468A
Contextual Info: RCA Linear Integrated Circuits This DATABOOK contains complete technical information on the full line of RCA standard commercial linear in­ tegrated circuits and MOS field-effect transistors for both industrial and con­ sumer applications. An Index to Devices provides a complete listing of

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES

Motorola transistors MRF 947

Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
Contextual Info: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,

1N5160

Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Contextual Info: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A