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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
HA600		Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF	125.41KB	1

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Thermaltronics TMT-HA600-2 Station: hot air; digital,with push-buttons; 1300W; 100÷480°C
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	TMT-HA600-2		3		1	1 $467.00 10 $436.00 100 $436.00 1000 $436.00 10000 $436.00	Buy Now
Kyocera AVX Components HA600S470FW250XT MLC 600 - Tape and Reel (Alt: HA600S470FW250XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	HA600S470FW250XT	Tape & Reel			500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components HA600S6R2CW250XT MLC 600 - Tape and Reel (Alt: HA600S6R2CW250XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	HA600S6R2CW250XT	Tape & Reel			500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components HA600S3R9BW250XT MLC 600 - Tape and Reel (Alt: HA600S3R9BW250XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	HA600S3R9BW250XT	Tape & Reel			500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components HA600S180FW250XT MLC 600 - Tape and Reel (Alt: HA600S180FW250XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	HA600S180FW250XT	Tape & Reel			500	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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HA600 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ha6007 Contextual Info: HBH 10.0 – 13.0 GHz Variable Gain Amplifier PRELIMINARY Microwave GmbH HA6007 General Description The HA6007 is a integrated GaAs high gain, low noise amplifier covering the frequency range from 10GHz to 13GHz. Low noise, high gain and high output power makes this device an ideal choice as an input amplifier	Original	ha6007 10ghz 13ghz	PDF
x-band power transistor Abstract: x-Band High Power Amplifier x band high power amplifier ha6005 Contextual Info: HBH 9.0 – 11.0 GHz High Power Amplifier Microwave GmbH HA6005 General Description The HA6005 is a integrated power amplifier for applications in X-Band. The moderate gain and high output power makes this device an ideal choice as power driver amplifier in the frequency range from 9.0GHz to 11.0GHz.	Original	ha6005 x-band power transistor x-band high power amplifier x band high power amplifier	PDF
"Buffer Amplifier" Abstract: HA6008 10 ghz driver amplifier x-band power transistor M101 Contextual Info: HBH 9.0 – 10.0 GHz Driver Amplifier Microwave GmbH HA6008 General Description The HA6008 is a integrated driver amplifier for X-Band applications. The moderate gain and high output power makes this device an ideal buffer amplifier in the frequency range from 9.0GHz to 10.0GHz.	Original	ha6008 buffer amplifier 10 ghz driver amplifier x-band power transistor +1m101	PDF
10 ghz driver amplifier Abstract: M203 ha6001 Contextual Info: HBH 5.0 – 15.0 GHz Broadband Amplifier Microwave GmbH HA6001 General Description The HA6001 is a broadband amplifier for applications up to Ku-Band. The high gain, good flatness and low noise figure makes this device an ideal choice as a low noise driver amplifier in the frequency range from 5.0GHz to 15.0GHz.	Original	ha6001 36mhz 500mhz 10 ghz driver amplifier +1m203	PDF
Low Noise Amplifier Abstract: ha6002 Contextual Info: HBH 14.0 – 16.4 GHz Amplifier Microwave GmbH HA6002 General Description The HA6002 is an amplifier for applications up to Ku-Band. The high gain, good flatness, low noise figure and high output power makes this device an ideal choice as a low noise driver amplifier in the frequency range from 14.0GHz to 16.4GHz.	Original	ha6002 low noise amplifier	PDF
ha6004 Contextual Info: HBH 8.0 – 18.0 GHz Broadband Power Amplifier Microwave GmbH HA6004 General Description The HA6004 is a broadband power amplifier for applications up to Ku-Band. The high gain and high output power makes this device an ideal choice as power driver amplifier in	Original	ha6004 18ghz	PDF
HA6003 Abstract: x-band power transistor Low Noise Amplifier x-Band High Power Amplifier X-band low noise M206 Contextual Info: HBH 6 – 13 GHz Broadband Low Noise Amplifier Microwave GmbH HA6003 General Description The HA6003 is a broadband X-band amplifier. The high gain and low noise makes this device an ideal choice as a pre-amplifier in the frequency range from 6GHz to 13GHz.	Original	ha6003 13ghz x-band power transistor low noise amplifier +3x-band high power amplifier x-band low noise m206	PDF
M203 Abstract: ITAR ha6006 Contextual Info: HBH 10.0 – 13.0 GHz Low Noise Amplifier PRELIMINARY Microwave GmbH HA6006 General Description The HA6006 is a integrated GaAs high gain, low noise amplifier covering the frequency range from 10GHz to 13GHz. Low noise, high gain and high output power makes this device an ideal choice as an input amplifier	Original	ha6006 10ghz 13ghz m203 +1itar	PDF
2n7588 Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149 Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.	OCR Scan	2n7588 p3139 bc233a sprague 40d +6gex36/7 c4274 s1766 c12712 tc236 gp149	PDF
HA050 Abstract: 5251* molex HA400 MOLEX 5659 HA100 MOLEX 5251 HA500 HA300 Sensors current HA100 ha600 Contextual Info: 電流検出器 Sensors Current S3 / P3 / R3 series ● ●汎用小型タイプ ●コネクタタイプ（S3） ●オンボードタイプ（P3） ●リード線タイプ（R3） ● ● ● • 仕様 S p e c i f i c a t i o n s General use compact type.	Original	ha050 ha200 ha300 ha400 +11ha500 ha600 100at 200at 300at 400at 5251* molex molex 5659 ha100 molex 5251 sensors current ha100	PDF
ha600 Abstract: BY100 Contextual Info: SYNERGY SEMICONDUCTOR S7E D • 1 DÜ1 3Ö 1 DGDD353 HIGH-SPEED 9-BIT TTL-ECL TRANSLATOR SYNERG Y SEMICONDUCTOR PRELIMINARY HA600 HA600 - S E L - FEATURES Db3 II DESCRIPTION ■ 9-blt Ideal for byte-parlty applications ■ Flow-through configuration	OCR Scan	dgdd353 sy100ha600 by100ha600 mecl10kh +7mc10h/100h600 sy10ha600 28-lead sy10ha600jc sy100ha600jc ha600 by100	PDF
Tr431 Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 Contextual Info: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 700 21012 AA200	OCR Scan	25t12 z1012 z1014 z1018 +16aa138 aa140 aa142 aa200 aa21q aa300 tr431 1n1525 cs1256hg bsf17 dd04 18db6a b1274 transistor 1n34a mp lt236 sn76	PDF
hep 154 silicon diode Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This	OCR Scan	my110b z0206 z0208 z0210 +16z0211 z0212 z0214 z0215 z0217 z0219 hep 154 silicon diode zy 406 transistor motorola hep 801 hep 154 diode hep r1751 triac zd 607 2sb337 rs5743.3 f82z hep 230 pnp	PDF