HA 174 TRANSISTOR Search Results

ha 174 transistor

Abstract: CMA110 eb15V
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LTE42005S PINNING - SOT44QA FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN • Gold metallization realizes very stable characteristics

transistor k 265

Abstract: NE64700
Contextual Info: K-BAND BIPOLAR OSCILLATOR TRANSISTOR NE64700 OUTLINE DIMENSIONS Units in jun FEATURES_ • FUNDAMENTAL OSCILLATION GREATER NE64700 (CHIP) THAN 20 GHz • LOW PHASE NOISE • OPERATION OVER MIL-SPEC TEMP RANGES Bonding Area ELECTRICAL CHARACTERISTICS ( t a - 25-cj

2SA1224

Abstract: E90115
Contextual Info: PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.5 GHz The NE901 Series of PNP silicon epitaxial transistors is designed for high frequency amplifier and high speed switch­

Contextual Info: HEWLETT-PACKARD/ CHPNTS m blE ]> • ll4475fl4 DDDTfib1! 3b5 M H P A HEW LETT A T-6°585 PACKARD U P to 6 G H z L ow N olse Silicon Bipolar Transistor 85 Plastic Package Features • • • • • Low Bias Current Operation Low Noise Figure:1.4 dB typical at 1.0 GHz

Contextual Info: AVANTEK 2GE INC 0A V A N TEK lim itit i o o o tsn T D AT-60585 Up to 6 GHz Low Noise ' Silicon Bipolar Transistor A vantek 85 Plastic Package Features • • Low Bias C u rren t O peration Low N o ise Figure: 1.4 dB typ ical at 1.0 G Hz 1.9 dB typ ical at 2.0 G Hz

2SC1600

Abstract: ne57500 NE57510
Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE57500 NE57510 FEATURES DESCRIPTION • HIGH OSCILLATOR OUTPUT POWER : 700 mW at 1.7 GHz The NE575 series of NPN silicon medium power transistors is designed to operate in amplifiers and oscillators up to 2 GHz with supply voltages up to 18 volts. Transistors in this series

capacitor mallory

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF15030 Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.

j718

Abstract: VK200/10-3B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field E ffect Transistor N-Channel Enhancement-Mode Lateral MOSFET l o w , 1.6 GHz, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,

2482 TRANSISTOR

Abstract: transistor 2482 TE 2482 ic ha 174 2482 H Transistor C 2482 2SC4161 2482 npn 2482 regulator B212A
Contextual Info: I Ordering num ber:EN 2482 _ 2SC4161 NPN Triple Diffused Planar Silicon Transistor 400V/7A Switching Regulator Applications Features . High breakdown voltage, high reliability . Fast switching speed tf=0.1ps typ . Wide ASO . Adoption of MBIT process

2SB1335A

Contextual Info: 2 S B 1 3 3 5 A Transistor, PNP Features Dimensions Units : mm • available in TO -220 FP (SC -67) package • low co lle ctor saturation voltage, typically V CE(sat) = -0 .5 V at \çl\B = -3 A /-0 .3 A 2SB1335A (TO-220 FP) 10 .0 1 7.0 • excellent current-to-gain

transistor p9o

Abstract: Dual-Port V-RAM H8330
Contextual Info: Section 17. Electrical Specifications 17.1 A bsolute M axim um R atings Table 17-1 lists the absolute m aximum ratings. Table 17-1. Absolute M axim um Ratings Item Symbol Supply voltage V cc Rating -0 .3 to +7.0 V Programming voltage V pp -0 .3 t o +13.5 V

Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz

ne46134

Abstract: NE46134 equivalent ne461
Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE . LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP . LOW NOISE: 1.5 dB TYP at 500 MHz

Contextual Info: 2SC2413K 2SC4098 Transistor, NPN Features Dimensions U n its : mm available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages package marking: 2SC2413K, 2SC4098; A-*, where ★ is hFE code 2SC2413K (SMT3) 2.8 ± 0.2 1 .9 ± 0 .2 0 .9 5 0 .9 5 2.4 (2 )[ ]

2N918

Abstract: 2n3600 2CU8 BFX73
Contextual Info: 3GE D • TSSTSB? DDaQ^fl11 4 ■ S G S -T H O M S O N U L IO T « ! "T-'SMS B F X 7 3 -2 N 9 1 8 2N 3600 S G S-THOMSON HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS The BFX73, 2N918 and 2N3600 are silicon planar epitaxial NPN transistors in Jedec TO-72 metal

F 2452 mosfet

Abstract: DV2820 0823L R K J 0822
Contextual Info: MOTOROLA O rder this docum ent by M RF166C/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N-Channel Enhancement Mode MOSFETs Designed primarily for wideband large-signal output and driver from 3 0 -5 0 0 MHz. •

Contextual Info: Section 17. Electrical Specifications 17.1 A bsolute M axim um R atings Table 17-1 lists the absolute maximum ratings. Table 17-1. Absolute M axim um Ratings Item Symbol Rating Unit Supply voltage V cc -0 .3 to +7.0 V Program m ing voltage V -0 .3 t o +13.5

SU 179 transistor

Contextual Info: MOTOROLA O rder this docum ent by M RF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N-Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N -C H A N N E L BROADBAND RF POW ER M OSFET Designed for broadband commercial and military applications up to 200 MHz

BFT65

Abstract: transistor bft65 f451 61 SIEMENS 25813
Contextual Info: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration

marking code 439

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LTE21025R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN 1 • Self-aligned process entirely ion implanted

3004x

Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for

ym 26500

Contextual Info: K-BAND BIPOLAR OSCILLATOR TRANSISTOR OUTLINE DIMENSIONS Units in nm FEATURES_ • FUNDAMENTAL OSCILLATION GREATER NE64800 (CHIP) THAN 20 GHz • LOW PHASE NOISE • OPERATION OVER MIL-SPEC TEMP RANGES ÜH Bonding Area ELECTRICAL CHARACTERISTICS (t a - 2 5 - c >

Contextual Info: AVANTEK INC 2DE D avantek • AT-01635 Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • ll'mibb DGQti4S2 H 22.0 dBm typical Pi ¿b at 2.0 GHz 9.5 dB typical Gi dB at 2.0 GHz High Gain-Bandwldth Product: 7.0 GHz typical

LUE2003S

Abstract: LUE2009S
Contextual Info: ^33'05 LUE2003S LUE2009S J^ PHILIPS INTERNATIONAL SbE ]> • 711Qfl5b 004fc,250 2S3 ■ PHIN MICROWAVE LINEAR POWER TRANSISTORS NPN silicon transistors for use in common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, a self-aligned process entirely ion implanted and gold sandwich