HA 1166 X Search Results

nsa 1588A

Abstract: 1588A NSA 1198 HA 1166 NSA 598 1541A ca c2 5120A
Contextual Info: Monolithic Multidigit Array Displays It is recommended that the back of the dis­ play be masked off with low tack masking tape during flux and clean operations, to prevent condensation of flux or cleaner on the under­ side of the lens. Custom Options: NSA XXXX Series

Contextual Info: VN10KC Vishay Siliconix New Product N-Channel 60-V D-S MOSFET , VA PRODUCT SUMMARY V (BR)DSS M in (V) *DS(on) M a x (£2) VGS(th )(V ) Id (A) 60 5 e v GS = io v 0.8 to 2.5 0.31 FEATURES BENEFITS APPLICATIONS • • Zener Diode Input Protected Low O n-Resistance: 3 Q

MT5C1008

Abstract: T5C1008
Contextual Info: I^ IIC R O N 128K SRAM M T 5C 1008 X 8 SRAM 128Kx 8 SRAM FEATURES • High speed: 12,15,17,20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply_ • Easy memory expansion with CE1, CE2 and OE options

IC 7217 Unit COUNTER

Abstract: 7217e
Contextual Info: Te m ic TELEFUNKEN Semiconductors U3750BM One Chip Telephone Circuit Description TELEFUNKEN microelectronic’s one chip telephone circuit, U 3750 BM, is BICMOS integrated circuit that performs all the speech and line interface functions required in an electronic telephone set, the tone ringer, the

Contextual Info: MICRON TECHNOLOGY INC 55E D • blllSMT 00034^2 T40 H M R N MICRON 32K T SRAM MT5C2889 X 9 SRAM % - z z - ] y 32K X 9 SRAM PIN ASSIGNMENT Top View • High speed: 1 5 ,1 7 ,2 0 and 25ns • High-perform ance, low-power CM OS double-m etal process • Single +5 V ±10% pow er supply

Contextual Info: SIEMENS NPN Silicon AF Transistors • • • • • BCX 68 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 69 PNP BCX 68 BCX 68-10 BCX 68-16 BCX 68-25 Marking CB CC

Contextual Info: SFH 235FA SIEMENS Silicon PIN Photodiode Daylight Filter Dimensions in inches mm 1.395(35.5) 1.317(33.5) .100 <2 54) .020 (.5) .012 (.3) .024 (0.6) .016(0.4) :206 (5.1) .181 (4.6) t , Cathode .031 (.8) .016 (.4) ,071 (1.8) H)47(1.2) .122(3.1) .102 ( 2 .6 )

2222LM

Abstract: 0610LL vn10 N10LM
Contextual Info: T em ic VNlO/0605/0610/2222 Series S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary P a rt N um ber rDSion M a x Q ) VG S(th) (V ) I d M in (A ) VN 10LE 5 @ V Gs = 10 V

Contextual Info: MI CR ON S E M I C O N D U C T O R INC b7E D • t.lllSMT OOG'iabO TT3 ■ MRN MT5C1008 128K X 8 SRAM I^ICRQN SRAM 128Kx 8 SRAM FEATURES • High speed: 12,15,17,20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply

2SB1166

Abstract: 2SD1723 d1723
Contextual Info: O rdering num ber: EN2021A SANYO » li 2SB1166/2SD1723 N 0 .2 0 2 1 A PNP/NPN Epitaxial Planar Silicon Transistors 50V/8A Switching Applications Applications . Relay drivers, high-speed inverters, converters Features . Low collector-to-emitter saturation voltage

Contextual Info: 2 4 3 5 7 6 P ld s fic RJI Kabel AWG 22 P i t Cable M Steckgeometrie RJ45 nach IEC 60603-7 22 P la s tic H10x1 Belegungsplan Loading-Plan Schirm Shield Gelb Yellow Orange Orange Wei 8 White Blau Blue 2 3 6 13,9 Ubertragungseigenschaften nach ISO/IEC 11801:2002: Class 0.

ha 1166 x

Abstract: T2045
Contextual Info: yjj Supertax ine. Preliminary 64-Channel Serial To Parallel Converter With P-Channel Open Drain Outputs Ordering Information Package Options Device 80-Lead Quad Plastic Gullwing Die HV49 HV4937PG HV4937X General Description Features j The HV49 is a low voltage serial to high voltage parallel converter

ic 8155 microcontroller

Abstract: ic 8155 block diagram
Contextual Info: Tem ic TELEFUNKEN Semiconductors One Chip Telephone Circuit U 3750 BM Description TELEFUNKEN microelectronic’s one chip telephone circuit, U 3750 BM, is BICMOS integrated circuit that performs all the speech and line interface functions required in an electronic telephone set, the

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.

Contextual Info: 3 DRAWING THIS MADE DRAWING IN 15 THIRD ANGLE UNPUBLISHED. 2 PROJECTION RELEASED FOR PUBLICATION D C O P Y R I G H T 19 BY AMP ] N C O R P O R A T E D , HA R R I S B U R G , P A . ALL INTERNATIONAL RIGHTS U . S . AND B O R E I GN P A T E N T S A N D / O R P A T E N T S P E N D I N G

Contextual Info: 3 DRAWI NG THIS MADE DRAWING P C O P Y R I G H T IN 15 THIRD UNPUBLISHED. 19 RE SERVED. A M P ANGLE BY PRODUCTS RELEASED AMP MAY BE 2 PROJECTION FOR PUBLICATION ] N C O R P O R A T E D , HA R R I S B U R G , P A . COVERED BY U .S . AND B O R E I GN ALL INTERNATIONAL

divide 5 prescaler

Abstract: BA7U MB501 prescaler divide by 5 prescaler
Contextual Info: Philips Semiconductors RF Communications Products Product specification Divide by: 128/129-64/65 dual modulus low power ECL prescaler DESCRIPTION FEATURES The SA701 is an advanced dual modulus Divide By 128/129 or 64/65} low power ECL prescaler. The minimum supply voltage is

philips 22 ah 590

Contextual Info: Philips Semiconductors Preliminary specification DCC write amplifier WRITE3 TDA1381 FEATURES • Single 3 V power supply • Low standby current consumption • 20 bidirectional current outputs (2 x nine heads) COMPACT CASSETTE • Single point main data and auxiliary current setting

Contextual Info: MICRON 32K MT5C2889 X 9 SRAM 32Kx 9 SRAM SRAM PIN ASSIGNMENT (Top View • High speed: 15,17,20 and 25ns • High-performance, low-power CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE1, CE2 and OE options • All inputs and outputs are TTL compatible

Contextual Info: • M T5C1189 TEUWULtXj'' IH«. SRAM 128Kx 9 SRAM WITH SINGLE CHIP ENABLE FEATURES PIN ASSIGNMENT Top View • • • • High speed: 17, 20, 25 and 35ns A utom atic C hip Enable pow er dow n All inputs and outputs are TTL com patible H igh-perform ance, low -pow er, CM O S double-m etal

Contextual Info: SGS-THOMSON L4936 L4938 DUAL MULTIFUNCTION VOLTAGE REGULATOR A DVANCE DATA • STANDBY OUTPUT VOLTAGE PRECISION 5V ±2% ■ OUTPUT 2 TRACKED TOTHESTANDBY OUT­ PUT ■ OUTPUT 2 DISABLE FUNCTION FOR STANDBY MODE ■ VERY LOW QUIESCENT CURRENT, LESS THAN 250|iA, IN STANDBY MODE

PCD8572

Abstract: PCD8572/P C2500 pcd85721
Contextual Info: MICROCHIP TECHNOLOGY INC 25E D bl03201 00041333 4 PCD8572 & M icrochip IK 128 X 8 Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • ThePCD8572 Is a 1KEEPROM manufactured using Microchip Technology's highly reliable SNOS technol­

alvt1682

Abstract: 74ALVT16827
Contextual Info: Philips Semiconductors Product specification 2.5V/3.3V 20-bit buffer/line driver, non-inverting 3-State 74ALVT16827 FEATURES DESCRIPTION • Multiple V qc and GND pins minimize switching noise The 74ALVT16827 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high

L4936

Abstract: L4938 st L4938 FLS2- transistor
Contextual Info: SGS-THOMSON [MlQ l^co [liL[lCTi^ lM!D SS L4936 L4938 DUAL MULTIFUNCTION VOLTAGE REGULATOR ADVANCE DATA • STANDBY OUTPUT VOLTAGE PRECISION 5V + 2% ■ OUTPUT 2 TRACKED TO THE STANDBY OUT­ PUT ■ OUTPUT 2 DISABLE FUNCTION FOR STANDBY MODE ■ VERY LOW QUIESCENT CURRENT, LESS