T5C1008 Search Results

Contextual Info: |V|IC=RON 128K S R A M 1 2 8 K x 8 T5C1008 X 8 SRAM S R A M FEATURES • High speed: 12,15,20 and 25 • Available in 300 mil- and 400 mil-wide SOJ packages • High-performance, low-power, CMOS double-metal process • Single +5V +10% power supply • Easy memory expansion with CE1, CE2 and OE

Contextual Info: M IC R O N 128K SRAM T5C1008 X 8 SRAM 128Kx 8 SRAM FEATURES • High speed: 12,1 5 , 20 and 25 • Available in 300 mil- and 400 m il-wide SOJ packages • High-perform ance, low-power, CM OS double-metal process • Single +5V ±10% pow er supply • Easy m emory expansion w ith CE1, CE2 and OE

1419H

Abstract: 1221H
Contextual Info: mm MHMW ''qgpp. L 7C jt jwSmi S -'whmmn* mm DEVICES INCORPORATED 128K x 8 Static RAM Low Power DESCRIPTION FEATURES □ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns m aximum

Contextual Info: L 7C 108/109 mm D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 128K x 8 Static RAM w ith Chip Select Pow erdow n, O utput Enable □ A uto-Pow erdow n Design □ A dvanced CM O S Technology □ High Speed — to 15 ns maximum □ Low Pow er Operation

MT5C1008

Abstract: T5C1008
Contextual Info: I^ IIC R O N 128K SRAM M T 5C 1008 X 8 SRAM 128Kx 8 SRAM FEATURES • High speed: 12,15,17,20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply_ • Easy memory expansion with CE1, CE2 and OE options