H5N6001P |
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Hitachi Semiconductor
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FET Transistor, Silicon N-Channel MOSFET High-Speed Power Switching |
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Original |
PDF
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H5N6001P |
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Renesas Technology
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Silicon N-Channel MOSFET High-Speed Power Switching |
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Original |
PDF
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H5N6001P |
|
Renesas Technology
|
Silicon N-Channel MOSFET High-Speed Power Switching |
|
Original |
PDF
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H5N6001P |
|
Renesas Technology
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MOSFET, Switching; VDSS (V): 600; ID (A): 20; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.3; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4640; toff ( us) typ: 0.22; Package: TO-3P |
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Original |
PDF
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