ACPL-H342
Abstract: AN5314 ACPL-H342-560E 500NC AN02-0310EN
Contextual Info: ACPL-H342 and ACPL-K342 2.5 Amp Output Current IGBT Gate Drive Optocoupler with Active Miller Clamp, Rail-to-Rail Output Voltage and UVLO in Stretched SO8 Data Sheet Lead Pb Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product
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ACPL-H342
Abstract: 500NC IGBT driver hcpl3120 IC A 3120 igbt drive
Contextual Info: ACPL-H342 and ACPL-K342 2.5 Amp Output Current IGBT Gate Drive Optocoupler with Active Miller Clamp, Rail-to-Rail Output Voltage and UVLO in Stretched SO8 Data Sheet Lead Pb Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product
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acpl-h342acpl-k342acpl-h342/acpl-k342an5336+6an1043an02-0310enav02-2526en500ncigbt driver hcpl3120ic a 3120 igbt drive
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AN5314
Abstract: ACPL-H342 0310E ACPL-K342
Contextual Info: ACPL-H342 and ACPL-K342 2.5 Amp Output Current IGBT Gate Drive Optocoupler with Active Miller Clamp, Rail-to-Rail Output Voltage and UVLO in Stretched SO8 Data Sheet Lead Pb Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product
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IC 8898
Abstract: c 8188-2 1084-18 D 5888 s SA 5888 M34280M1
Contextual Info: IC dependence of oscillating characteristics H34280M1 FCR3.52MC5 - STD It«« IC H0 \ t. b. m V1H/V1L e. V2H/V2L 3.2 U. HH m Room Temp. Vdd CV] *! / 3.2 .1 ♦ Uffe] d. tuS] •. 3 m item a*e f. m g. m Fosc Trite Duty V *tv t Vhold 3.5887 72 SB.B i.e i i.es
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m34280m152mc5m34288mic 8898+4c 8188-21084-18d 5888 ssa 5888
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AN02-0310EN
Abstract: ACPL-H342 AN5314 ACPL-K342 3120 v IGBT DRIVER ACPL-K342-000E AV02-2526EN K342 inverter IGBT driver hcpl3120 AN5336
Contextual Info: ACPL-H342 and ACPL-K342 2.5 Amp Output Current IGBT Gate Drive Optocoupler with Active Miller Clamp, Rail-to-Rail Output Voltage and UVLO in Stretched SO8 Data Sheet Lead Pb Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product
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acpl-h342acpl-k342acpl-h342/acpl-k342an5336+8an1043an02-0310enav02-2526enan53143120 v igbt driveracpl-k342-000ek342inverter igbt driver hcpl3120
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MIL-G-4520C
Abstract: NEMA FR-4 GETEK FR4 lamination TTL johnson ring counter 4520C HC49US27 160-1183-1-ND CDRH74102MC C0603C103K5RACT 000000M
Contextual Info: NB4N441MNGEVB NB4N441MNGEVB Evaluation Board User's Manual Device Name: NB4N441MN http://onsemi.com EVAL BOARD USER’S MANUAL Description Board Features The NB4N441MNG is a precision clock PLL based synthesizer which generates select differential LVPECL clock output frequencies from 12.5 MHz to 425 MHz. A
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nb4n441mngevbnb4n441mnnb4n441mngevbum2073/d+10mil-g-4520cnema fr-4getek fr4 laminationttl johnson ring counter4520chc49us27160-1183-1-ndcdrh74102mcc0603c103k5ract000000m
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transistor TL131
Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110
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ptfb212507sh200-watth-34288g-4/2transistor tl131+8tl231tl127tl130tl131transistor tl1208c802tl-130lm78l05acmnd
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PG-DSO-20
Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
Contextual Info: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test
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pg-dso-20pg-rfp-10h-34265-8h-33265-8+15h-30248-2h-36248-2h-33288-2h-31248-2h-37248-2h-34288-2a1807ptfa211801eh-32259-2lt 860ptfa071701glptfa072401fl1800 ldmos1805-1880ptma210452m
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71M6543
Abstract: IEC 62056 DB6543 24 volt output smps design IEC62056 71M653X teridian metering software user teridian application notes 71m6513 small size Ferrite core TDK L6 material maxim temp sensors analog design guide
Contextual Info: 71M6543 Demo Board USER’S MANUAL Page: 1 of 91 v5 71M6543 Polyphase Energy Meter IC DEMO BOARD REV 4.0 and 5.0 USER’S MANUAL Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent
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diode IN 5402
Abstract: L 9106 ADSP-21MOD970 "analog devices" adsp modem* v.90 Bell103
Contextual Info: ADSP-21MOD970 MULTI-PORT INTERNET GATEWAY PROCESSOR Maximizing Port Density for Remote Access Applications KEY FEATURES: OVERVIEW: Implements six modem channels in one, 1.45square-inch device includes datapump and controller n Efficient system architecture—no external
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bss138zx
Abstract: SOT23-DBV5 3.5mm stereo headphone jack sense mono laptop zetex BSS138TA TPA2051D3 5002K BSS138TA PCC2174CT 3.5mm mono standard plugs SP2-001E
Contextual Info: User's Guide SLOU254 – June 2009 TPA2051D3EVM 1 2 3 4 5 Contents Introduction . 1 Operation . 2
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MC57XXPSIA
Abstract: coaxial input to rca 5.1 audio output circuit optical input to rca 5.1 output circuit SUBWOOFER BOARD coaxial to analog 5.1 rca converter circuit TAS570x GDE PCE3878CT gde 41 C1680X5R0J475M TAS5713EVM
Contextual Info: User's Guide SLOU281 – January 2010 25W Digital Input Amplifier With EQ and 2-Band DRC This manual describes the operation of the TAS5713EVM to evaluate the performance of the TAS5713 integrated digital audio power amplifier. The main contents of this document are:
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slou281tas5713evmtas5713mc57xxpsia+8coaxial input to rca 5.1 audio output circuitoptical input to rca 5.1 output circuitsubwoofer boardcoaxial to analog 5.1 rca converter circuittas570x gdepce3878ctgde 41c1680x5r0j475m
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J971
Abstract: Teradyne J971 Digital Test system seeker missile seeker catalyst tester teradyne catalyst mathcad J953 Teradyne Communications tower
Contextual Info: Mixed-Signal Processing and Power Conversion Solutions for Military/Aerospace ANALOG DEVICES: THE LEADER IN MIXED-SIGNAL INTEGRATION When mixed-signal design is in your critical path, or if standard PCB interconnects are limiting your ability to meet challenging
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transistor di 960
Contextual Info: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications
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tl249
Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier
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diode T25-4
Abstract: IC AN214 N345 pioneer amplifier an214 XCV1600E ac3 amplifier circuit diagram AN214 amplifier horizontal driver transistor D155 K235 XCV300E-6PQ240C
Contextual Info: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.2 November 9, 2001 Preliminary Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)
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ICS951417
Abstract: ATI SB450 RC410MB L-803 ATI IXP450 asus C2406 bc929 capacitor C0402 R10141
Contextual Info: 5 4 3 PAGE B A 1 Z94Rp D C 2 TITLE 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Block Diagram Yonah CPU 1 Yonah CPU(2) THERMAL SENSOR/FAN RC410ME AGTL+ I/F (1) RC410ME A-LINK (2) RC410ME DDR2 I/F (3)
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TA2022-100
Abstract: TA2022 AW600-06-40T-24-H RB-TA2022 amidon TRIPATH TECHNOLOGY 100W car power amplifier 17 pins tripath for car audio amplifiers TRIPATH 5k 100 16v
Contextual Info: Tr i path Technol ogy, I nc. - Technical Information RB-TA2022 CLASS-T DIGITAL AUDIO AMPLIFIER 6 CHANNEL TA2022 REFERENCE DESIGN Technical Information - Board Rev. 3.2 Revision 1.0 – November 2001 GENERAL DESCRIPTION The RB TA2022 Version 3.1 is a 6 channel, 100W per channel audio amplifier designed
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TA2022
Abstract: 100W car power amplifier 17 pins 4 channel 100w audio amplifier circuit diagram tripath for car audio amplifiers 100w high power car amplifier TA2022-100 T690-06 TRIPATH TECHNOLOGY 3306P POT micrometals toroid core t68
Contextual Info: Tr i path Technol ogy, I nc. - Technical Information RB-TA2022 CLASS-T DIGITAL AUDIO AMPLIFIER 2 CHANNEL TA2022 REFERENCE DESIGN Technical Information – Board Rev. 2.2 Revision 1.0 – November 2001 GENERAL DESCRIPTION The RB TA2022 Version 2.2 is a stereo 100W per channel audio amplifier in a slim 3”
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energy meter ic 0038
Abstract: 22721 71M6515 YAGEO RC1812 22721 SO8 teridian application notes 71m6515 0l72 Panasonic super a series VB -5150 Rogowski RR1220P-472
Contextual Info: 71M6515H Demo Board User’s Manual 71M6515H Demo Board USER’S MANUAL 12/5/2005 2:06 PM Revision 2.0 TERIDIAN Semiconductor Corporation 6440 Oak Canyon Rd. Irvine, CA 92618-5201 Phone: 714 508-8800 ▪ Fax: (714) 508-8878 http://www.teridian.com/ meter.support@teridian.com
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pms 28 Bridge Rectifier
Abstract: 35WX PBC03SAAN P5139 CAP SMD0805 PSOP36-DKD H342 irlms5703pbfct DRV8402DKD 22uFd
Contextual Info: User's Guide SLOU251B – January 2009 – Revised January 2010 DRV8402DKD EVM Motor Drive Evaluation Board The DRV8402DKD EVM customer evaluation module demonstrates the integrated circuit DRV8402DKD from Texas Instruments. The EVM can be used with an MSP430 control module or can be wired into an
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LM780L05ACM-ND
Abstract: PTFB193408SVV1R250XTMA1
Contextual Info: PTFB193408SV Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193408SV is a 340-watt symetrical push-pull LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input
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C109 ceramic capacitor
Abstract: TL235
Contextual Info: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110
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PTFB212507SH
Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110
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