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    H2A TRANSISTOR Search Results

    H2A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy

    H2A TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    C945 pin spec

    Abstract: TRANSISTOR c945 p C945 TO92 transistor npn c945 transistor c945 c945 w 53 C945 NPN transistor c945 P c945 transistor transistor c945 datasheet
    Contextual Info: CYStech Electronics Corp. Spec. No. : C204A3 Issued Date : 2003.04.01 Revised Date : 2005.01.03 Page No. : 1 / 5 General Purpose NPN Epitaxial Planar Transistor BTC945A3 Description • The BTC945A3 is designed for use in driver stage of AF amplifier and low speed switching.


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    C204A3 BTC945A3 BTC945A3 BTA733A3. UL94V-0 C945 pin spec TRANSISTOR c945 p C945 TO92 transistor npn c945 transistor c945 c945 w 53 C945 NPN transistor c945 P c945 transistor transistor c945 datasheet PDF

    a733 transistor

    Abstract: A7333 A733 P C306A Transistor a733 BTA733A3 A733 BTC945A3
    Contextual Info: Spec. No. : C306A3 Issued Date : 2003.07.14 Revised Date : 2005.01.03 Page No. : 1 / 5 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA733A3 Description • The BTA733A3 is designed for use in driver stage of AF amplifier and general purpose amplification.


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    C306A3 BTA733A3 BTA733A3 BTC945A3. UL94V-0 a733 transistor A7333 A733 P C306A Transistor a733 A733 BTC945A3 PDF

    na44

    Abstract: transistor NA44 symbol BTNA44A3 BTPA94A3
    Contextual Info: CYStech Electronics Corp. Spec. No. : C211A3 Issued Date : 2003.03.026 Revised Date :2005.03.21 Page No. : 1/5 High Voltage NPN Epitaxial Planar Transistor BTNA44A3 Features • High breakdown voltage. BVCEO =400V • Low saturation voltage, typically VCE(sat) =60mV at IC/IB=10mA/1mA.


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    C211A3 BTNA44A3 10mA/1mA. BTPA94A3 UL94V-0 na44 transistor NA44 symbol BTNA44A3 BTPA94A3 PDF

    transistor h2a

    Abstract: HLB121A H2A transistor VCB-55 HA2001
    Contextual Info: HI-SINCERITY Spec. No. : HA200112 Issued Date : 2001.04.01 Revised Date : 2005.02.05 Page No. : 1/4 MICROELECTRONICS CORP. HLB121A NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121A is a medium power transistor designed for use in switching


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    HA200112 HLB121A HLB121A 183oC 217oC 260oC transistor h2a H2A transistor VCB-55 HA2001 PDF

    D2150

    Abstract: D2150 s BTD2150A3 NPN transistor ECB TO-92 500ma 1A
    Contextual Info: CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2005.06.03 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA


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    C848A3 BTD2150A3 100mA BTB1424A3 UL94V-0 D2150 D2150 s BTD2150A3 NPN transistor ECB TO-92 500ma 1A PDF

    C252A

    Abstract: CYStech Electronics diode marking H2 DTA114E DTA114EA3 DTC114EA3 C252A3
    Contextual Info: CYStech Electronics Corp. Spec. No. : C252A3 Issued Date : 2003.09.29 Revised Date : Page No. : 1/6 PNP Digital Transistors Built-in Resistors DTA114EA3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


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    C252A3 DTA114EA3 DTC114EA3 C252A CYStech Electronics diode marking H2 DTA114E DTA114EA3 DTC114EA3 C252A3 PDF

    transistor h2a

    Abstract: H2A transistor transistor marking T2 HSB1386A HA2001
    Contextual Info: HI-SINCERITY Spec. No. : HA200111 Issued Date : 2001.12.01 Revised Date : 2005.02.14 Page No. : 1/4 MICROELECTRONICS CORP. HSB1386A LOW FREQUENCY TRANSISTOR -20V, -4A Features • Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) TO-92 • Excellent DC current gain characteristics.


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    HA200111 HSB1386A 183oC 217oC 260oC transistor h2a H2A transistor transistor marking T2 HSB1386A HA2001 PDF

    HBF421

    Abstract: ha2002
    Contextual Info: HI-SINCERITY Spec. No. : HA200214 Issued Date : 2002.08.01 Revised Date : 2004.06.18 Page No. : 1/4 MICROELECTRONICS CORP. HBF421 PNP EPITAXIAL PLANAR TRANSISTOR Description Video B-class Power stages in TV-receivers TO-92 Absolute Maximum Ratings • Maximum Temperatures


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    HA200214 HBF421 183oC 217oC 240oC 260oC HBF421 ha2002 PDF

    2907 TRANSISTOR PNP

    Abstract: C317A BTN2222A3 BTP2907A3 C317A3-H 5030 ic marking
    Contextual Info: CYStech Electronics Corp. Spec. No. : C317A3-H Issued Date : 2002.06.11 Revised Date : 2005.06.29 Page No. : 1/5 General Purpose PNP Epitaxial Planar Transistor BTP2907A3 Description • The BTP2907A3 is designed for general purpose amplifier and high-speed switching, medium power


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    C317A3-H BTP2907A3 BTP2907A3 BTN2222A3 UL94V-0 2907 TRANSISTOR PNP C317A BTN2222A3 C317A3-H 5030 ic marking PDF

    BTN2222A3

    Abstract: NPN transistor ECB TO-92 C227A 5030 ic marking btn2222
    Contextual Info: CYStech Electronics Corp. Spec. No. : C227A3 Issued Date : 2003.03.26 Revised Date : 2005.06.29 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTN2222A3 Description • Low collector output capacitance. • High current capability • Low leakage current


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    C227A3 BTN2222A3 UL94V-0 BTN2222A3 NPN transistor ECB TO-92 C227A 5030 ic marking btn2222 PDF

    HE6106

    Abstract: HPN2369A
    Contextual Info: HI-SINCERITY Spec. No. : HE6106 Issued Date : 1992.09.22 Revised Date : 2005.02.14 Page No. : 1/5 MICROELECTRONICS CORP. HPN2369A NPN EPITAXIAL PLANAR TRANSISTOR Description The HPN2369A is designed for general purpose switching and amplifier applications.


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    HE6106 HPN2369A HPN2369A 183oC 217oC 260oC HE6106 PDF

    HLB120S

    Contextual Info: HI-SINCERITY Spec. No. : HA200204 Issued Date : 2002.02.01 Revised Date : 2005.02.05 Page No. : 1/4 MICROELECTRONICS CORP. HLB120S NPN Triple Diffused Planar Type High Voltage Transistors Description The HLB120S is a medium power transistor designed for use in switching


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    HA200204 HLB120S HLB120S 183oC 217oC 260oC PDF

    transistor h2a

    Abstract: HBC517 H2A transistor Darlington transistor to 92 transistor BC 336
    Contextual Info: HI-SINCERITY Spec. No. : HA200217 Issued Date : 2002.09.01 Revised Date : 2005.02.04 Page No. : 1/4 MICROELECTRONICS CORP. HBC517 NPN EPITAXIAL PLANAR TRANSISTOR Description General Purpose High Darlington Transistor TO-92 Absolute Maximum Ratings • Maximum Temperatures


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    HA200217 HBC517 183oC 217oC 260oC transistor h2a HBC517 H2A transistor Darlington transistor to 92 transistor BC 336 PDF

    H01N45A

    Contextual Info: HI-SINCERITY Spec. No. : MOS200408 Issued Date : 2004.11.01 Revised Date : 2005.03.10 Page No. : 1/4 MICROELECTRONICS CORP. H01N45A H01N45A Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor


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    MOS200408 H01N45A H01N45A 183oC 217oC 260oC PDF

    marking H2A sot-23

    Abstract: MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3
    Contextual Info: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the


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    DL126TRS/D DL126/D. 70/SOT 75/SOT 416/SC 88/SOT marking H2A sot-23 MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3 PDF

    free transistor equivalent book

    Abstract: marking H2A sot-23 marking W2 sot363 H2B sot23 transistor number code book FREE
    Contextual Info: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. For the most current Tape & Reel information, please download BRD8011/D


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    DL126TRS/D DL126/D. BRD8011/D free transistor equivalent book marking H2A sot-23 marking W2 sot363 H2B sot23 transistor number code book FREE PDF

    2N6027

    Abstract: PUT 2N6027 equivalent transistor of 2n6027 2n5270 2N6028 Application Note 2n6028 "Programmable Unijunction Transistor" 2n6027 PUT transistor 2n6027 2n527
    Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two


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    2N6027, 2N6028 2N6027/D 2N6027 PUT 2N6027 equivalent transistor of 2n6027 2n5270 2N6028 Application Note 2n6028 "Programmable Unijunction Transistor" 2n6027 PUT transistor 2n6027 2n527 PDF

    photoe

    Contextual Info: TO S H I B A -CLOGIC/nEMORY} 9097248 TOSHIBA b? DE | ' ì D ,ì7a4fl 0 0 0 T S T 3 S LOGIC/MEMORY TCD205C CCD AREA IMAGE SENSOR CCD (Charge Coupled Device) 67C 09593. T-41-55 T C D 205C is a 488 x 376-element CCD area image sensor desi g n e d for B/ W TV cameras.


    OCR Scan
    TCD205C T-41-55 376-element 88mmx6 8D24A-C) photoe PDF

    TPC6501

    Contextual Info: TPC6501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6501 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.2 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


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    TPC6501 TPC6501 PDF

    Contextual Info: TPC6501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6501 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 400 to 1000 IC = 0.2 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


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    TPC6501 PDF

    KLI-14403

    Abstract: KLI-6003 transistor H1A Kodak CCD 28 pin KLI-6013 EL7202 KLI-8023 7218E 1N914 2N2369
    Contextual Info: Eastman Kodak Company Technical Data Kodak Digital Science KLI-14403 Image Sensor Features • • • • • • • • • • • • Tri-Linear Color Array 3 x 14404 pixels 5um2 pixels. 32 line spacing between color channels. Dual shift register per channel.


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    KLI-14403 74ACT 500KHz KLI-6003 transistor H1A Kodak CCD 28 pin KLI-6013 EL7202 KLI-8023 7218E 1N914 2N2369 PDF

    transistor H1A

    Abstract: e01x marking code H1A h1a transistor transistor H1A H2A CV12C ccd 1920 sony ICX274AL E 102H transistor cv14
    Contextual Info: ICX274AL Diagonal 8.923mm Type 1/1.8 Progressive Scan CCD Image Sensor with Square Pixel for B/W Video Cameras Description The ICX274AL is a diagonal 8.923mm (Type 1/1.8) interline CCD solid-state image sensor with a square pixel array and 2.01M effective pixels. Progressive


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    ICX274AL 923mm ICX274AL AS-B6-02 transistor H1A e01x marking code H1A h1a transistor transistor H1A H2A CV12C ccd 1920 sony E 102H transistor cv14 PDF

    SMA marking code LG

    Abstract: MPS3904 MPS3904RLRA radial leaded TVS Motorola Master Selection Guide
    Contextual Info: Tape and Reel Specifications and Packaging Specifications Page Tape and Reel Specifications . . . . . . . . . . . . . . . . . . . 5.12–2 Embossed Tape and Reel Ordering Information . 5.12–3 Embossed Tape and Reel Data for Discretes . . . 5.12–4 Lead Tape Packaging Standards


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    PDF

    KLI-10203

    Abstract: kli-8013 KLI-14403 MPS5771 KLI-6013 KLI-6003 KLI-8023 cm218 10203 H2N transistor
    Contextual Info: Eastman Kodak Company Technical Data Kodak Digital Science KLI-10203 Image Sensor Features •= Tri-Linear Color Array 3 x 10200 pixels •= 7um pixels. •= 22 line spacing between color channels. •= Dual shift register/single output per channel. •= High offband spectral rejection


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    KLI-10203 74ACTypical kli-8013 KLI-14403 MPS5771 KLI-6013 KLI-6003 KLI-8023 cm218 10203 H2N transistor PDF