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    HSC1815

    Abstract: diode marking H2
    Contextual Info: HI-SINCERITY Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2006.07.28 Page No. : 1/4 MICROELECTRONICS CORP. HSC1815 NPN Epitaxial Planar Transistor Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.


    Original
    he6523hsc1815150oc200oc+6183oc217oc260oc245oc10secdiode marking h2 PDF

    Contextual Info: HI-SINCERITY Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2004.12.28 Page No. : 1/4 MICROELECTRONICS CORP. HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.


    Original
    he6523hsc1815183oc217oc+1260oc PDF

    HSC1815

    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2001.06.06 Page No. : 1/3 HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.


    Original
    he6523hsc1815 PDF