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    Contextual Info: HI-SINCERITY Spec. No. : HE6267 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Page No. : 1/4 MICROELECTRONICS CORP. H2N3417 NPN SILICON TRANSISTOR Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.


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    he6267h2n3417183oc217oc+1260oc PDF

    diode marking H2

    Abstract: H2N7000
    Contextual Info: HI-SINCERITY Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2006.08.10 Page No. : 1/5 MICROELECTRONICS CORP. H2N7000 N-Channel Enhancement Mode Transistor Description The H2N7000 is designed for high voltage, high speed applications such as switching


    Original
    he6267h2n7000150oc200oc+6183oc217oc260oc245oc10secdiode marking h2 PDF

    H2N7000

    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2001.04.18 Page No. : 1/4 H2N7000 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers.


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    he6267h2n7000 PDF

    1902 transistor

    Abstract: H2N3417
    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6267-B Issued Date : 1992.11.25 Revised Date : 2000.09.01 Page No. : 1/3 H2N3417 NPN SILICON TRANSISTOR Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.


    Original
    he6267-bh2n34171902 transistor PDF