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    H11D1 GE Search Results

    H11D1 GE Datasheets Context Search

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    h11dx

    Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage


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    H11DX H11D1 H11D2 H11D3 H11D4 H11D1, H11D2, H11D3, H11D4, E90700 PDF

    H11DX

    Abstract: H11D4.300 H11D12 4N38
    Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage


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    H11DX H11D1 H11D2 H11D3 H11D4 H11D1, H11D2, H11D3, H11D4, E90700 H11D4.300 H11D12 4N38 PDF

    Contextual Info: H11D1/H11D2/H11D3/H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection, High BVCER Voltage FEATURES • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % • Good CTR linearly with forward current • Low CTR degradation A 1 6 B C


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    H11D1/H11D2/H11D3/H11D4 i179004 H11D1/H11D2, H11D3/H11D4, 2002/95/EC 2002/96/EC H11D1/H11D2/H11D3/H11D4 18-Jul-08 PDF

    H11DX

    Abstract: H11D1 4N38 H11D2 H11D3 H11D4
    Contextual Info: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage


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    H11D1 H11D2 H11D3 H11D4 H11DX H11D1, H11D2, H11D3, H11D4, E90700 H11D1 4N38 H11D2 H11D3 H11D4 PDF

    H11D3

    Abstract: OPTO H11D1
    Contextual Info: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage


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    H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 H11D1/2/3/4 1-888-Infineon H11D1/2/3/4 H11D3 OPTO H11D1 PDF

    H11D1-X007

    Abstract: H11D1 H11D2 H11D3 H11D4
    Contextual Info: H11D1/ H11D2/ H11D3/ H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Features • • • • • • • • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % Good CTR Linearly with Forward Current Low CTR Degradation


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    H11D1/ H11D2/ H11D3/ H11D4 H11D1/H11D2, H11D3/H11D4, 2002/95/EC 2002/96/EC UL1577, E52744 H11D1-X007 H11D1 H11D2 H11D3 H11D4 PDF

    25E 106

    Abstract: H11D1M
    Contextual Info: 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description • High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high


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    4N38M, H11D1M, H11D2M, H11D3M, MOC8204M H11DXM MOC8204M MOC8204M, 25E 106 H11D1M PDF

    C1775

    Abstract: DIODE CH71 c1771 C1770 H11DX C2079 C1772 C1774 C2090 H11D1
    Contextual Info: GENL INST.Rt OPTOELEK "flfl DE | BÛTDlEfi □□□SÛT3 E | ~ t GENERAL INSTRUMENT PHOTOTRANSISTOR OPTOCOUPLERS P A C K A G E D IM E N S IO N S HI1D1/1Z HI1D2/2Z H11D3/3Z D E S C R IP T IO N r" j 6.86 .270 o WWW 8.89 (.350) 6.35 (.250) t 7.62 (.300) REF


    OCR Scan
    T-m-80 3jhi55) C2090 C2079 h11d1/1z h11d3/3z H11DX C1770 C1772 C1774 C1775 DIODE CH71 c1771 C1770 C2079 C1772 C1774 C2090 H11D1 PDF

    TIL112

    Abstract: H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255
    Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60


    OCR Scan
    H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 H11D1, H11D2, TIL112 MCA255 PDF

    IC VS 1307

    Abstract: GE H11D2 H11B255 H11C1 H13B1 4N38 4N38A H11A10 h17a H11AA2
    Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100


    OCR Scan
    H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 IC VS 1307 GE H11D2 H11B255 H11C1 H13B1 4N38 h17a PDF

    CNY37

    Abstract: MCP3040 4n33 and 4n35 mct81 MRD901 4N25 CROSS MOC70T-1 MOC70T1 moc3020 datasheet application notes CQX47
    Contextual Info: CR104/D GENERAL INSTRUMENT-TO-MOTOROLA OPTOELECTRONICS CROSS REFERENCE ISOLATORS General Instrument MOTOROLA Code General Instrument MOTOROLA Code 4N25, A 4N25, A A MCP3009, 10 MOC3009, 10 A 4N26 4N26 A MCP3011, 3011A MOC3011 A 4N27 4N27 A MCP3012 MOC3012


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    CR104/D MCP3009, MOC3009, MCP3011, MOC3011 MCP3012 MOC3012 MCP3020, MOC3020, MCP3022, CNY37 MCP3040 4n33 and 4n35 mct81 MRD901 4N25 CROSS MOC70T-1 MOC70T1 moc3020 datasheet application notes CQX47 PDF

    V4N36

    Abstract: ic MCT2e
    Contextual Info: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 PHOTOTRANSISTORS High Voltage, High CTR, High Sensitivity Jedec Types Phototransistor General Purpose High Collector-Emitter Voltage


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    H11Dx: CS200, CS201, CS202 100mA CNY17-3 CNY17-4 CNY17-5 SFH600-0 SFH600-1 V4N36 ic MCT2e PDF

    1431 transistor equivalent

    Abstract: H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255
    Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60


    OCR Scan
    H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA20 1431 transistor equivalent MCA255 PDF

    phototransistor til 33

    Abstract: TIL112 TIL111 Til 160 h11a H11A1 H11A2 H11B1 TIL116 H11D2
    Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60


    OCR Scan
    H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 TIL114, TIL11S, phototransistor til 33 TIL112 TIL111 Til 160 h11a TIL116 PDF

    TIL111 equivalent

    Abstract: TIL119 equivalent TIL112 equivalent TIL112 TIL119 MCT2E equivalent TIL 143 TIL113 H11A2 H11B1
    Contextual Info: 1-20 Max Ratings @ T * = 25°C Device No. Output Pd mW T ransistor >C v CEO mA V Coupled C haracteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @Vce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60


    OCR Scan
    H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 TIL113 TIL119 TIL111 equivalent TIL119 equivalent TIL112 equivalent TIL112 TIL119 MCT2E equivalent TIL 143 TIL113 PDF

    TIL111 equivalent

    Abstract: TIL117 equivalent TIL112 equivalent TIL112 ge h11a h11 isolator TIL 143 H11A1 H11B1 H11B2
    Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v is o kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60


    OCR Scan
    H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 H11A2, TIL111 equivalent TIL117 equivalent TIL112 equivalent TIL112 ge h11a h11 isolator TIL 143 PDF

    H11A1

    Abstract: H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255 MCT26
    Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60


    OCR Scan
    H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA230, MCA255 MCA255 MCT26 PDF

    MCT2E equivalent

    Abstract: mct2e MCT2E connection diagram ic MCT2e Til 160 TIL111 equivalent MCT2E characteristics TIL112 equivalent TIL112 MCT26
    Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60


    OCR Scan
    H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCT26 MCT26 MCT2E equivalent mct2e MCT2E connection diagram ic MCT2e Til 160 TIL111 equivalent MCT2E characteristics TIL112 equivalent TIL112 PDF

    MCT2E

    Abstract: H11A1 H24A1 H24A2 H24A3 H24A4 IS74 SFH609-1 SFH609-2 SFH609-3
    Contextual Info: ISOCOM COMPONENTS Photo Transistor General Purpose 4 and 6 Pin DIP Part Number Current Transfer Ratio If = 10mA Min % Features Contin u ou s Forw ard Current Max (m A) 20 4 Pin P a ckage 75 H24A 4 50 H11A1 50 350 0 IL2 NEW 30 ( If= 1m A) 750 0 100 IS1 3.0


    OCR Scan
    I511C0M 16rnA H24A1 H24A2 H24A3 H24A4 H11A1 MCT2E H11A1 H24A1 H24A3 H24A4 IS74 SFH609-1 SFH609-2 SFH609-3 PDF

    H15B1

    Abstract: H15B2 H15B1-H15B2 SCR 131-6 H11B255 H11D2 H11C1 H13A2 photo interrupter module h13a1 4N38A
    Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 TYPICAL OiSEC.) VCEISAT) MAX. Tr Tf 1 2 2 1 1 2 2 2 2 I 5 1I 55 5 5 5 5 5 5 4 .4 .4 .4 1.0


    OCR Scan
    H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 H15B1 H15B2 H15B1-H15B2 SCR 131-6 H11B255 H11C1 H13A2 photo interrupter module h13a1 PDF

    H13A1

    Abstract: photo interrupter module h13a1 photo interrupter module H13A2 H13A1-H13A2 H13A 4N38 4N38A H11A10 H11AA1
    Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 100 100 100 100 50 50 TYPICAL OiSEC.) VCEISAT) MAX. Tr Tf 1 2 2 30 30 1 1 2 2 2


    OCR Scan
    H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 H13A1 photo interrupter module h13a1 photo interrupter module H13A2 H13A1-H13A2 H13A 4N38 PDF

    H15B1

    Abstract: IC VS 1307 H11C1 photo interrupter module h13a1 4N38 4N38A H11A10 H11AA1 H11AA2 H11B1
    Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H 11A 10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER R A TIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? I I 20% 10% 1500 1500 ID nA MAX. BVc e o (VOLTS) MIN. 50 30 100 200 30 30 100 100


    OCR Scan
    H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 H15B1 IC VS 1307 H11C1 photo interrupter module h13a1 4N38 PDF

    photo interrupter module h13a1

    Abstract: 4N38 4N38A H11A10 H11AA1 H11AA2 H11B1 H11B2 H11D1 H11D2
    Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER R A TIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? 1500 1500 I I 20% 10% ID nA MAX. BV c e o (VOLTS) MIN. 50 30 100 200 30 30 100 100


    OCR Scan
    H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 photo interrupter module h13a1 4N38 PDF

    1307 TRANSISTOR

    Abstract: H15B1 4N38-4N38A "Photo Interrupter" dual transistor 4N38 4N38A IC VS 1307 H11AA1 H11AA2 H11B2
    Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? I I 20% 10% 1500 1500 ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100


    OCR Scan
    H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 1307 TRANSISTOR H15B1 4N38-4N38A "Photo Interrupter" dual transistor 4N38 IC VS 1307 PDF