H 7057 Search Results

TRANSISTOR 8073

Abstract: ZGF300F D 1414 transistor transistor 764 9 s w 02
Contextual Info: SOT23 NPN LOW NOISE SILICON MICROW AVE TRANSISTOR PROVISIONAL DATA ZGF300F FEATURES * H IG H G A IN B A N D W ID T H P R O D U C T . fr = 9 G H z T Y P @ lc = 25m A . * L O W N O IS E FIG U R E . * H IG H G A IN . 1.9 d B T Y P A T 1.0 GHz. |S 2 1 1 2 = 12.0 d B @ 1.0 GHz.

Contextual Info: 5bE D • ^70570 GOGbTH? bflT ■ Z E T B E-LINE DIODE SPECIFICATIONS S C H O T T K Y BARRIER DIODES ZETEX T - c n - i^ SEMICONDUCTORS T h e se de v ice s have a high breakdow n voltage and ultra fa st sw itc h in g capabilities. R.F. applications in clu d e low n o ise m ixers, large and sm all signal detectors, lim iters and discrim inators. A p p lica tio n s

H 7057

Abstract: "multiple aperture Window Discriminator" Op Amp Circuit Collection 1978 H7057 Vishay Ultronix Grand Junction CO Q81, 1K zero crossing detector wein bridge oscillator FET circuit collection Vishay Ultronix Grand Junction CO Q81 adjustable Q notch filter
Contextual Info: SECTION 1 BASIC CIRCUITS Inverting Amplifier Non-Inverting Amplifier VOUT e b R2 VIN R1 VOUT e RIN e R1 R1 a R2 VIN R1 TL H 7057 – 2 TL H 7057 – 1 Difference Amplifier VOUT e  R3 R1 a R2 a R4 Inverting Summing Amplifier J R1 V R4 2b R2 V1 R1 VOUT e b R4

Contextual Info: PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISS U E2- MARCH 94_ FEATU RES * H ig h v o lta g e A P P L IC A T IO N S * T e le p h o n e d ia lle r circ u its ABSOLUTE MAXIMUM RATINGS. PAR A M ET ER SYM BOL Collector-Base Voltage

si9946

Abstract: SI9956
Contextual Info: AN603_ Vishay Siliconix Designing With the Si9978DW Configurable H-Bridge Controller W harton McDaniel Currently, there are a number of fully Integrated H-bridges on the market. Both bipolar and MOS technologies have been

mosfet based h bridge

Abstract: SI4946 Si4946EY si9979 AN603 h bridge Controller PWM Si9978 Si9978DW C423A
Contextual Info: AN603 Vishay Siliconix Designing With the Si9978DW Configurable H-Bridge Controller Wharton McDaniel Currently, there are a number of fully integrated H-bridges on the market. Both bipolar and MOS technologies have been used to create these parts. However, all of them suffer from

SI9959

Abstract: 1mF CAPACITOR SI9945 SI9978 si9979 AN603 Si9940 Si9945DY Si9978DW H-bridge Mosfet Si9978DW
Contextual Info: AN603 Designing With the Si9978DW Configurable HĆBridge Controller Wharton McDaniel Currently, there are a number of fully integrated H-bridges on the market. Both bipolar and MOS technologies have been used to create these parts. However, all of them suffer from problems such as limited

AN603

Abstract: h bridge Controller PWM Temic Semiconductors acceleration Si9945DY "cross reference"
Contextual Info: Temic AN603 Semiconductors Designing With the SÌ9978DW Configurable H-Bridge Controller Currently, there are a number of fully integrated H*bridges on the market. Both bipolar and MOS technologies have been used to create these parts. However, all of them suffer from problems such as limited

2TX650

Abstract: zetex transistors TO92 BF493 ZTX458 ZTX558 ZTX758 BF392 BF393 MPSA92 ZTX658
Contextual Info: SbE » • ^70570 DGDb^M2 GTfl H Z E T B T -'Z /l-O l TABLE 13 : NPIU/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability.

H7057

Contextual Info: NPN SILICON PLANAR POWER TRANSISTOR ZBD853 P R O V IS IO N A L D A T A S H E E T IS S U E A - M A R C H 94 FEATURES * Fast switching * * Guaranteed hFE specified up to 4 A m p s Low collector-emitter saturation voltage ABSOLUTE M A XIM U M RATINGS. PARAMETER

photodiode BPW50

Contextual Info: SbE D • ^70570 0007DSS 405 H Z E T B S EM IC O N D U C TO R DICE \” 0 \ ZETEX SEMICONDUCTORS PHOTOTRANSISTORS/PHOTODARLINGTON Dice type Description ZM100 Photodarlington ZM110 Phototransistor ZM210 Phototransistor V CEO V CBO V ebo V V 35 35 35 35 35 35

Contextual Info: SbE D • =1=170370 OGObTSM Ö1T H Z E T B CENTRE COLLECTOR E-LINE ZETEX TABLE 3: NPN RF TRANSISTO R Type FXT3866 V CBO Max. Cont. V CEO V V mA 55 30 400 SEMICONDUCTORS Max. V CE sat at lc 'b V mA mA Min. 100 15 1.0 h FE 20 ^out at Max. 'c mA mW at f MHz

Contextual Info: T H I S DRAWING IS U N P U B L IS H E D . R E L E A S E D F OR P U B L I C A T I O N 2003 LOC COR Y R I G HT 2003 LTR 17.9±0.7 L1 10±0.1 A OnI O 'S N '* n I . DO < N a R E V I S I ONS D I ST A BY TYCO E L E C T R O N I C S C O R P O R AT IO N A LL R IG H T S R E S E R V E D .

Contextual Info: SOT23 NPN SILICON PLANAR M ED IU M POWER DARLINGTON TRANSISTOR FMMT614 ISSU E 2 - FEBRUARY 1996_ FEATU RES * hFE up to 5k at lc= 500m A * Fast switching * L o w V CElsa« a t H '9 h l c P A R T M A R K IN G D E T A IL S - 6 1 4 ABSOLUTE MAXIMUM RATINGS.

Zener 9v

Contextual Info: Tem ic SÌ9112 S e m i c o n d u c t o r s High-Voltage Switchmode Controller Features • 9- to 80-V Input Range H igh E fficiency O peration f> 80% • • C urrent-M ode C ontrol H igh-Speed, S ource-S ink O utput Drive Internal Start-U p C ircuit Internal O scillato r 1 M Hz)

Contextual Info: fax id: 7057 CY74FCT163543 16-Bit Latched Transceiver Featu res Functional Description 5V to le ra n t Inp u ts and O utp u ts T h e C Y 74FC T163543 is a 16-bit, high-speed, low power latched transceiver that is organized as two independent 8-bit D-type latched

Contextual Info: D SbE • ^70576 0D07052 7Tb H Z E T B SEMICONDUCTOR DICE MOSFETs - N-CHANNEL B V 0SS Dice type ZVN0540 Min. ZETEX f'DSIonI Max. at lD V qs SEMICONDUCTORS Max. IDSS at Max. IGSS at 'd m Rated VDS V GS=20V Min. atV0S ^GS th Chip Min. Max. at lD geometry at

4x500

Contextual Info: 15 ZE TE X INC TT7057Ö G0Gb035 0 95 D 0 6 0 3 5 / *“5 V * '/ 0 - 6 7 6-bit video A-D converter ZN440 ZN441 FEATURES 1 6 M H z sam ple rate - Z N 4 4 0 6-bit resolution Expandable to 7 or 8 bits ± 'h L S B linearity N o sam ple and hold required U nipolar or bipolar analogue input

Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR I S S U E 3 - A U G U S T 1995 _ FEATURES * H i g h V CE0 * L o w saturation v olta ge C O M P L E M E N T A R Y TYPE: - B SP 1 9 P A R T M A R K IN G D E T A IL : - B S P 1 6 ABSOLUTE MAXIMUM RATINGS.

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ISSUE 2 - M A Y 94 _ This IGBT combines the high input impedance of the DMOSFET with the high current density of the BJT. FE A TU R E S * E x tre m e ly lo w on state v o lta g e * N o ne ed to d e ra te fo r h ig h e r te m p e ra tu re s

Toshiba rdram

Abstract: TC59R1809
Contextual Info: TO S H IB A D IG IT A L IN TE G R A TE D CIRCUIT i N T t ^ K A t E D C IR C U IT T C 5 9 R 1 8 0 9 V K /H K TOSHIBA TFCHNICAL DATA SILICO N G> T E "C M O S TENTATIVE 2 ,0 9 7 ,152w ord x 9 - b i t Rambus DRAM INTRO DUCTIO N The TC59R1809VK/HK Rambus DRAM RDRAM is a next-generation*

1-800-4NEWARK

Abstract: 1-800-4-NEWARK newark Jackson Labs Technologies Uraco Technologies 876-3132
Contextual Info: MOTOROLA AUTHORIZED DISTRIBUTOR & WORLDWIDE SALES OFFICES NORTH AMERICAN DISTRIBUTORS UNITED STATES ALA B A M A H un tsville Allied Electronics, Inc. 205 721-3500 Arrow Electronics . (205)837-6955 FAI. (205)837-9209

Contextual Info: 12 13 8 IO 7 70575 "A" CKTo H IN. MM IN. 4 5 6 7 8 9 10 7. 62 I0„ 16 2„70 I5„24 I7„78 20„32 22„86 25„40 27„94 30„48 33„02 35„56 38„ 10 40„64 43. 18 45„72 48. 26 50„80 53„34 55„88 58. 42 60.96 „300 „400 „500 „600 „700

ZVP2106

Abstract: zetex zvp zetex zvp2106a ZVP2106A F216 ZVP P-channel
Contextual Info: bGE D • ^7057fl □ □ □ 7 1 1 3 ITM ■ ZETB ' ZETEX S E M I C O N D U C T O R S P-Channel enhancement mode vertical DMOS FET ZVP2106 FEATURES • C o m pa ct geom etry • Fast s w itc h in g speeds • No secondary breakdow n • E xcellent tem perature sta b ility