GTI TRANSISTOR Search Results

Contextual Info: S G S -T H O M S O N S f ï „ „ ;[LI gTi iDgi S D 1534-08 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS . 80 WATTS (typ. IFF 1030 - 1090 MHz . 75 WATTS (min.) DME 1025 - 1150 MHz . 50 WATTS (typ.) TACAN 960 -1215 MHz

diode f40c

Abstract: 3845a ESM6045DV
Contextual Info: 3DE m D 7«ÌSRS37 GD3GM74 4 • ESM6045DF ESM6045DV SGS-THOMSON [*[im[I gTI[iMQ(gS S G S-THOMSON ' NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE

TT220

Abstract: TP15N05L
Contextual Info: SGS-THOMSON ^ 7/L MTP15N05L/FI MTP15N06L/FI RfflD [s3©[ilLl gTI[SΩlÎ!!lDÊi N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S(on MTP15N05L MTP15N05LFI 50 V 50 V 0.15 fi 0.15 Q 15 A 10 A MTP15N06L MTP15N06LFI

2SD843

Contextual Info: TOSHIBA 2SD843 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD843 INDUSTRIAL APPLICATIONS HIGH CURRENT SWITCHING APPLICATIONS 1 2 001 05-24 - TOSHIBA 2SD843 ELECTRICAL CHARACTERISTICS Ta = 25°C 2 2 001 05-24 - COLLECTOR-EMITTER VOLTAGE hpE Vq e

K356

Abstract: gti TRANSISTOR 2SK356
Contextual Info: TOSHIBA {DI S CR ET E/ OPT O} Ti 9097250 TOSHIBA DISCRETE/OPTO tfoììuht dF | ^7250 99D 16650 SEMICONDUCTOR DDlbbSG b D 3 \ TOSHIBA FIELD EFFECT TRANSISTOR 2SK356 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA O I S C R E T E / O P T O l 9097250 TO S H IB A TI < D IS C R E T E /O P T O DE I ÌCH725G 99D 16798 □□IbTTfl S CTT-3>q-l3 TOSHIBA FIELD EFFECT TRANSISTOR Toshiba SEMICONDUCTOR Y T F 2 4 1 SILICON N CHANNEL MOS TYPE TECHNICAL DATA % -MOS I)

Contextual Info: TOSHIBA {DISCRETE/OP T03- ^ 0 1 7 2 5 0 9097250 TOSHIBA DISCRETE/OPTO ¿/iuhihi 90D SEMICONDUCTOR 16339 DDltaa*! L DT'23'3£ TOSHIBA G-TR MODULE MG75M2CK1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.

YTF540

Abstract: 16845 ip27a 316a2 In15A
Contextual Info: TOSHIBA {DISCRETE/OPTO} D e | TOTVSSD 9097250 TOSHIBA ÍDISCRETE/OPTO 99 D 16844 T - 2 ? -/3 □Dlbfl44 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 4 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA CT-MOSI) INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

2-10A3B

Abstract: ip27a
Contextual Info: ^ TOSHIBA {DISCR ETE/OPTO} DE | A C H T E S O □ G i b A M h 1 99D 9097250 TOSHIBA DISCRETE/OPTO 16846 ffT-39-13 TOSHIBA FIELD EFFECT TRANSISTOR " SEMICONDUCTOR ¿Joóìuha •Y T F 5 4 1 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSI) INDUSTRIAL APPLICATIONS

Contextual Info: T O S H I B A -CDISCRETE/OPTOJ- 9097250 T O S H IB A ¿^oHuhn TÏ D IS C R E T E / O P T O »FI^DTVESD 99D 16892 DDlhñTa D T 3 S -II TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 8 3 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSE) INDUSTRIAL APPLICATIONS

Contextual Info: TOSHIBA { D IS CRET E/ OP TO } ^ 99D 16828 9097250 TOSHIBA <DISCRETE/OPTO DE | SOTTESO QQlbñEfi G | ~ D 7 ^ 3 1 ’-H TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 2 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA Tt-MOS E) INDUSTRIAL APPLICATIONS

S51C

Abstract: T0-204M
Contextual Info: TOSHIBA {DISCRETE/OPTO} T T TI t OTVSSD DDlbhMM O J 99D 9097250 TOSHIBA DISCRETE/OPTO ¿/Mhìht m 16644 07^3^-13 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 SK 3 2 5 SILICON N CHANNEL MOS TYPE (7T-M0S) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in nun

Contextual Info: TT T O S H I B A -CDISCRETE/OPTOÏ 9 0 9 7 2 5 0 T O S H IB A 99D 1 6 8 5 8 D IS C R E T E / O P T O TOSHIBA SEMICONDUCTOR ¿/ashihi D eT I t D T V E S O DOlbflSfl fi I~~ D T ^ -O S FIELD EFFECT TRANSISTOR Y T F 6 1 3 S I L I C O N N C H A N N E L M O S -TYPE

KSH200

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSH200 D-PACK FOR SURFACE MOUNT A PPLICATIONS • • • • H ig h D C C u rre n t G a in B u ilt-in a D a m p e r D io d e a t E -C Le a d F o rm e d fo r S u rfa c e M o u n t A p p lic a tio n s N o S u ffix S tra ig h t Le a d (I. P A C K , “ - I “ S u ffix)

2SK794

Abstract: C1B capacita
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TO S H IB A tfo à itib a TT DE I t D T T S S O D IS C R E T E /O P T O 99D 16769 □ □ l t 7 b cl D T -3 9 ~ \3 SEMICONDUCTOR T OSHIBA FIELD EFFECT TRANSISTOR TECHNICAL DATA SILICON N CHANNEL MOS TYPE 2 S K 7 9 4 (7T-M0S)

Contextual Info: TO SH IBA 2SB1015 TOSHIBA TRANSISTOR 2 S SILICON PNP TRIPLE DIFFUSED TYPE B 1 0 1 5 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm 10.3MAX. • Low Collector Saturation Voltage : v CE sat = -1 .7 V (Max.) at IC = - 3 A , IB = -0 .3 A • Collector Power Dissipation : P £ = 25W (Tc = 25°C)

Contextual Info: Communication ICs Speech network BA6566/BA6566F/BA6566FP The BA6566, BA6566F, and BA6566FP are speech network ICs which possess the basic functions required for handset communications. In addition to amplifying signals from a transmitter and sending them to a telephone line,

tc9123bp

Abstract: tc9123 TD6101P td6101 EJC-TC9123BP tc9124ap tc9124 EJC-TC9123BP-2 nd 2981 TD6102P
Contextual Info: g | INTEGRÄTEDCIRCUIT TC9123BP "i:-MOS" DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TECHNICAL DATA TENTAT I'VE Unit in mm T C 9 K' 3B P FM/AM S Y N T H E S I Z E R T UN ER PEE i3.4L-4u.rh .rfirfi rji-4x.r{i rfi.4 1- ;:,î TC9123B1 J is C-MOS LSI newly developed as ?LL

ge 4n25

Abstract: a4N26 2N27 4N25 application notes ge 4n26 4N25A VLS07 4N26 4N27 4N28
Contextual Info: 4N25, 4N25A 4N26 4N27 4N28 o NPN PHOTOTRANSISTOR PN INFRARED EMITTING AND DIODE . . . Gallium Arsenide LED optically coupled to a Silicon Photo Transistor designed for applications requiring electrical isolation, high-current transfer ratios, small package size and low cost; such as interfacing and coupling svstems, phase and

BA6v

Contextual Info: TOSHIBA {DISCRETE/OPTO} il TO »E| 9097250 TOSHIBA DISCRETE/OPTO tfoîiubn D D lb S f if l 90D 16288 D T - 33-35 TOSHIBA GTR MODULE SEMICONDUCTOR MG 300H1FL1 SILICON NPN TRIPLE DIFFUSED TYPE TECHN ICAL D AT A HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

GE thyristor

Abstract: ge-2 transistor DR-6 GE DR6GE Transistor GE 67 ge-10 transistor proximity capactive sensor GE power SCR DR3GE Ge NPN
Contextual Info: Proximity Sensors Capacitive Steel Housing Types DR GE, M 14, PG 21, 13/8" • Steel housing, cylindrical • Diameter: M 14, PG 21, 1 3/8" • Sensing distance: 3 to 10 mm • Power supply: 10 to 27 VDC 90 to 240 VAC • LED-indication for output ON AC types

gti TRANSISTOR

Abstract: 16838
Contextual Info: TOSHIBA { D I S C R E T E / O P T 0> 9097250 TO SHIBA T=¡ D ISCR ETE/O P TO 99D TOSHIBA SEMICONDUCTOR postuliti FIELD SILICON EFFECT N CHANNEL . Low Leakage Current : I(;ss= ± 50ChA(Max.) ^J *< • * rt X< a M * 1 (Typ.) @ Vgg=±20V IpSS” 250uA(Max.)

Contextual Info: TOSHIBA {DISCRETE/OPTO} "TD DE| TO^HSO 9097250 TOSHIBA DISCRETE/OPTO tfosììUk ODlbBlS 90D 163 15 3 DT- 33-35 SEMICONDUCTOR TOSHIBA G-TR MODULE TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE MG25M2CK2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

Contextual Info: TOSHIBA ÍDISCRETE/OPTO} ~TD 9097250 TOSHIBA DISCRETE/OPTO SEMICONDUCTOR TECHNICAL DATA D Ê J 70772SO 001bS7M H 90D 16274 H G 1 5 0 H 1 Ï LI MG15 0H2CL1 M G 1 5 0 H 2 D L 1 hJ Eu H ffi o m h o £ O TOSHIBA CORPORATION G T I A2A DTr-33-‘35 TOSHIBA _