GT50J101
Contextual Info: GT50J101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm . High Input Impedance : tf=0.35ns Max. io -6 . . P •» < = i —r _| sl = . Low Saturation Voltage : VcE(sat)=4 .0V(Max.) ) 2.50 . Enhancement-Mode j L 'i i l 3.0 +2.5 1.0-0 .2 5 I'.AXIMUM RATINGS (Ta=25°C)
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GT50J101
Abstract: CP100
Contextual Info: GT50J101 HIGH POWER S W I T C H I N G A P P L I C A T I O N S . Unit 20.5MAX High Input I m p e d an ce High Speed tf=0. 35/is Max. Low S a t u r a t i o n Vo lt a g e v C E ( s a t ) = 4 .0 V ( M a x .) in m m 0 3.3 ±0.2 Enhancement-Mode 2.5 3.0 MAXI MUM R A T I N G S
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gt50j10135/iscp100 |
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GT250101
Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a
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2-99a1a2-99b1agt250101mg150j2ys40+8mg75q2ys11mg400q1us11mg200q1js9mg75j2ys40mg50j6es40mg200q2ys91mg75j6es40mg100q2ys9
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GT30J124
Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
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bce0010ebce0010fgt30j124gt30f123+8gt45f122gt30g122gt40j323gt30g123gt30f122igbt gt30j124gt45f122 seriesgt45f123
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
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2002-sepstr-g6551str-f6654g6551+7tda16822str-f6653strg6551igbt cross referenceka5m0565rtop224y equivalentbup 312
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GT30F124
Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Contextual Info: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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bce0010fgt30f124gt30j124gt30f123+7gt30g124gt45f12245f122gt30f124 equivalent30g122gt30g122gt30f122
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GT50J101
Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Contextual Info: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive
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gt50j101gt50t101mosfet 500v 50agt60m102+6s5j53gt60j101gt15q101 equivalentgt60m101s5783f500v n-channel igbt to-3p
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s5j53
Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
Contextual Info: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require
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e0010abce0010a3503c-0109s5j53+9s5783fgt30j322s5783electronic ih rice cookergt50j101mg30t1al1igbt induction cookermg60m1al1mosfet 500v 50a
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GT80J101
Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
Contextual Info: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412
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gt8j101gt8j102gt8q101gt15j101+16gt15j102gt8q102mg300j2ys50mg400j1us51mg400j2ys50mg800j1us51gt80j101mg75q2ys40mg360v1us41mg100q2ys42mg75j6es50gt60m301mg15j6es40mg300q2ys40mg150q2ys40mg100j6es5
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MG30H1BL1
Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
Contextual Info: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX
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00-600v-1400vgt8n101gt8q101+16gt25h101pmg25h1bs1gt25ji01gt50g102mg50h1bs1gt50j101mg30h1bl1s3885mg100h2zs1mg100g2ys1mg100n2ys1mp6502mg150j2ys1mp6101mg25q6es1mg15j6es1
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GT45F122
Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Contextual Info: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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bce0010ds-167bce0010egt45f122+9gt30g122gt30f122gt45f123gt45f122 seriesgt35j321gt45g122gt60n32345f122gt45f124
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GT30F121
Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
Contextual Info: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications
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bce0010agt30f121gt30g121gt30g131+7mg30t1al1gt30*122gt45f12mg60m1al1gt30fgt60m301gt60m101
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MG75J2YS40
Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
Contextual Info: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a
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GT30J124
Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
Contextual Info: 製品カタログ 2010-3 東芝半導体 製品カタログ ディスクリート IGBT h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1 特長と構造 IGBTは Insulated Gate Bipolar Transistor の頭文字です。 MOSFETと同様に高入力インピーダンス特性を持ち電圧で駆動できます。
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bcj0010gbcj0010fgt30j124gt45f122+8gt30f123gt30f124gt30f122igbt gt30f124gt30g122gt30g124gt45g122gt30f125
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