GSO 69 Search Results

Contextual Info: Si PIN photodiode S3590-08/-09/-18/-19 Large active area Si PIN photodiode Features Applications Sensitivity matching with BGO and CsI TI scintillators: S3590-08/-09 Scintillation detectors Sensitivity matching with blue scintillator (LSO, GSO, etc.): S3590-18/-19

S3590-08

Abstract: S3590 S3590-09 S3590-18 S3590-19 ceramic scintillator PIN photodiode 420 nm
Contextual Info: PHOTODIODE Si PIN photodiode S3590-18/-19 Large area Si PIN photodiode for scintillation counting Features Applications l Suitable for coupling with blue scintillator LSO, GSO, etc. l Radiation detection (PET, etc.) l Internal quantum efficiency: 100 % (λ=420 nm)

PIN photodiode 420 nm

Abstract: S3590-18 S3590-08 S3590-09 S3590-19 GSO 69
Contextual Info: PHOTODIODE Si PIN photodiode S3590-18/-19 Large area Si PIN photodiode for scintillation counting Features Applications l Suitable for coupling with blue scintillator LSO, GSO, etc. l Radiation detection (PET, etc.) l Internal quantum efficiency: 100 % (λ=420 nm)

Contextual Info: Si PI N photodiode S3590-08/-09/-18/-19 Large active area Si PI N photodiode Features Applications Sensitivity matching w ith BGO and CsI TI scintillators: S3590-08/ -09 Scintillation detectors Hodoscopes Sensitivity matching w ith blue scintillator ( LSO, GSO, etc.) :

PIN Photodiode

Abstract: S3590-19 Si PIN PHOTODIODE S3590-08
Contextual Info: Si PIN photodiode S3590-08/-09/-18/-19 Large active area Si PIN photodiode Features Applications Sensitivity matching with BGO and CsI TI scintillators: S3590-08/-09 Scintillation detectors Sensitivity matching with blue scintillator (LSO, GSO, etc.): S3590-18/-19

GSO 69

Contextual Info: PHOTODIODE Si PIN photodiode S3590-18/-19 Large area Si PIN photodiode for scintillation counting Features Applications l Suitable for coupling with blue scintillator LSO, GSO, etc. l Radiation detection (PET, etc.) l Internal quantum efficiency: 100 % (λ=420 nm)

db1200GS

Abstract: CK410B CK410B datasheet CK410 ICS9FG1904B-1 9FG1200 ICS9FG1904 DB1900GS 9FG1200-1
Contextual Info: ICS9FG1904B-1 Integrated Circuit Systems, Inc. Frequency Generator for CPU, PCIe Gen 1, PCIe Gen 2 & FBD Recommended Application: Functionality at Power Up PLL Mode CLK_IN (CPU FSB) 1 FS_A_410 MHz 1 100 <= CLK_IN < 200 200<= CLK_IN <= 400 DB1900GS/GSO with 15:4 output grouping

S3590-19

Contextual Info: H A M A M A T S U PRELIMINARY DATA Nov, 1998 Si P,N p h o t o d io d e S3590-18 Large area Si PIN photodiode for scintillation counting FEATURES • Suitable for coupling with blue scintillator LSO, GSO, etc. • Internal Quantum Efficiency = 100 % (k=420 nm)

Contextual Info: <:>F0<:>F/F 5GFB@BF=H9 D9?5J :NKXYVNW , N\s3^jiodijpn ^pmm`io 95C , N\s3h\fdib ^pmm`io 755C , Gso`i_`_ o`hk3 m\ib` pk oj 65: , Xdoc cdbcgt `no\]gdnc`_ m`gd\]dgdot , Tomjib m`ndno\i^` \]dgdot oj ncj^f - qd]m\odji F[UPLKQ 5UUQPLKXPTSW , S`agjr njg_`mdib q`mndji \q\dg\]g`

Contextual Info: TELEDYNE COMPONENTS 2flE 0*il7fciQ2 OGObSS? a • T> -T ' 3 5 ' a s VERY LOW Ro n SWITCHING CM 697 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 448-1 .230 MAX. .185 ±.005- • LOW RDS - 150hms MAXIMUM • LOW Vp - 3 Volts MAXIMUM

TRANSISTOR SL 100

Abstract: bs107a
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BS107A QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. Gate-source voltage open drain • High-speed switching Drain current (DC) • No second breakdown

ha 1406 ha

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package

MGF1601

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING U n itm illim e te rs The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The

MGF1801

Abstract: IG200 mitsubishi microwave MGF1801BT
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky g a te , is designed for use S-X band amplifiers and oscillators. The.hermetically sealed metal-ceramic package

LCD DISPLAY MODULE sharp LQ0

Abstract: sharp LQ0 FSP lcd power supply VU meter with LCD LQ038Q7DB03 X320 20 led VU meter transistor LCP-03011 FH23-61S-0
Contextual Info: PREPARED BY DATE APPROVED BY DATE S H A R P MOBILE LIQUID CRYSTAL DISPLAY GROUP SHARP CORPORATION SPECI FI C A T I O N S LCP-03011B SPEC No. FILE No. ISSUE : Jul. 11. 2003 PAGE : 22 pages Design Center MOBILE LCD Enterprise Development Center DEVICE SPECIFICATION FOR

sharp LQ0

Abstract: LCD DISPLAY MODULE sharp LQ0 FF00251SS1 FF0251SS1 GS21 GS42 GS63 LQ036Q1DA01 VCOMdc tp
Contextual Info: PREPARED BY DATE A. OGINO Sep. 10. 2004 S CHECKED BY DATE T.OMORI Sep. 10. 2004 H A R SPEC No. LCP-04030B FILE No. ISSUE : September. 10. 2004 PAGE : 20 pages P MOBILE LIQUID CRYSTAL DISPLAY GROUP SHARP CORPORATION S P E C I FI C A T I O N S ' APPLICABLE DIVISION

mgf1908

Abstract: MGF1908A MGF1303B
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1908A TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1908A is a low noise GaAs FET with an N-channel Schottky gate,which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and

F4310E

Abstract: F4314E mitsubishi application mg series gaas
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F4310E series su per-lo w -n oise HEMT High Electron M o bility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic

E 212 fet

Abstract: MGF1801BT
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky gate , is designed for use S-X band amplifiers and oscillators. The hermetically sealed metal-ceramic package

gs 069 0605

Abstract: MA4TF50 MA4TF5005 transistor mesfet x-band transistor
Contextual Info: M a n A M P c o m p an y General Purpose 0.5 |im N-Type GaAs MESFET Transistors MA4TF50 Series V3.00 Case Styles Features • • • • • Low Noise Figure High A ssociated Gain High Maximum Available Gain D esigned for Battery Operation Useful to Ku-Band

lcd inverter HIU-288

Abstract: BHR-03VS-1 GS42 HIU-288 LQ057Q3DC12 SM02 LQ057
Contextual Info: RECORDS OF REVISION M O D E L N o : LQO 5 7 Q 3 D C 1 2 S P E C N o : L A I —0 5 0 1 6 SUMMARY NO. PAGE 2005.5.30 NOTE 1st Issue L A I—05016 — 1 NOTICE This publication is the proprietary of SHARP and is copyrighted, with all rights reserved. Under the

MGF4916F

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910F Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0 F series super-low -noise HEMT High Electron M ob ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic

MGF4310

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F 4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to Unit: millimeters (inches) 4 M iN .