MGF1801BT Search Results

MGF1801BT Datasheets (3)

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Mitsubishi

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MGF1801BT		Mitsubishi	TRANS JFET N-CH 6V 250MA 3GD-24	Original	PDF	338.28KB	4
MGF1801BT		Mitsubishi	TAPE CARRIER MICROWAVE POWER GaAs FET	Scan	PDF	124.18KB	3
MGF1801BT		Mitsubishi	TAPE CARRIER MICROWAVE POWER GaAs FET	Scan	PDF	147.45KB	3

MGF1801BT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
E 212 fet Abstract: MGF1801BT Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky gate , is designed for use S-X band amplifiers and oscillators. The hermetically sealed metal-ceramic package	OCR Scan	mgf1801bt 23dbm 100ma e 212 fet	PDF
MGF1801BT Contextual Info: < High-power GaAs FET small signal gain stage > MGF1801BT S to X BAND / 0.2W non - matched DESCRIPTION The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures	Original	mgf1801bt 23dbm 100ma	PDF
MGF1801BT Abstract: MGF1801B Contextual Info: June/2004 June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET MITSUBISHI ELECTRIC June/2004	Original	june/2004 mgf1801bt mgf1801b	PDF
MGF1801BT Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky gate , is designed for use S-X band amplifiers and oscillators. The hermetically sealed metal-ceramic package	OCR Scan	mgf1801bt 23dbm 100ma	PDF
MGF1801 Abstract: IG200 mitsubishi microwave MGF1801BT Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky g a te , is designed for use S-X band amplifiers and oscillators. The.hermetically sealed metal-ceramic package	OCR Scan	mgf1801 mgf1801bt 23dbm 100ma +2ig200 mitsubishi microwave	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	m6sta-005va/wa/sa mf-156sta-006va/wa/sa mf-156sra-002va/wa/sa mf-622sta-004va/wa/sa +16mf-622sta-005va/wa/sa mf-622sta-006va/wa/sa mf-622sra-002va/wa/sa mf-2500sta-002va/wa 003va/wa 004va/wa c42v5964 mgf1302 transistor mgf1601 mgfc1402 m57721 m67760lc h2 marking sot-89 mmic 2sc5125 mitsubishi m57710-a m68776	PDF
gaas fet marking B Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K" Contextual Info: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source	Original	ql-1104e-a july/2008 gd-26 mgf4951a/52a +16mgf4953a/54a mgf1951a mgf1952a mgf1953a mgf1954a mgf4851a gaas fet marking b gaas fet micro-x package marking gaas fet marking a marking k gaas fet mgf1961a gaas fet micro-x package gaas fet marking j mgf1964a mgf1963a micro-x marking "k	PDF