GS42 Search Results

LLDRAM

Contextual Info: Preliminary GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

GS4288C36GL-24I

Abstract: GS4288C09GL-24I GS4288C18GL-25I GS4288C36GL-25I GS4288C09GL-25I
Contextual Info: GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

GS4288S09GL-24I

Abstract: GS4288S18GL-25I GS4288S09GL-25I
Contextual Info: GS4288S09/18L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18 288Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4288S09/18L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18 288Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4288S09/18L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18 288Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

144-BALL

Contextual Info: Preliminary GS4288S09/18L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18 288Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4288S09/18L 144-Ball µBGA Commercial Temp Industrial Temp 32M x 9, 16M x 18 288Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: EURO QUARTZ GS42 Sine Wave VCXO 10.0MHz ~ 156.0MHz 11.4 x 9.6 x 2.5mm SMD FEATURES Sine Wave output VCXO Output 0dBm into 50 load, higher output available Harmonics < 20dBc Low current consumption OUTLINE & DIMENSIONS DESCRIPTION GS42 sine wave VCXOs provide a true sine wave out output. The

Contextual Info: Preliminary GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4288S09/18L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18 288Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

A7-A19

Abstract: A211 A221
Contextual Info: Preliminary GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4288C09/18/36L 144-Ball µBGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

A202

Abstract: A211 A221
Contextual Info: Preliminary GS4288S09/18L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18 288Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

GS421SD

Contextual Info: CORPORATION GS421SD Description ISSUED DATE :2005/12/20 REVISED DATE : S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 1 A The GS421SD is designed for low power rectification. Package Dimensions REF. A

GS420SD

Contextual Info: CORPORATION GS420SD Description ISSUED DATE :2005/12/20 REVISED DATE : S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 1 A The GS420SD is designed for low power rectification. Package Dimensions REF. A

Contextual Info: Preliminary GS4288S09/18L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18 288Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

ES50N18LA2

Abstract: YTX14-BS YTZ10S MOTORCYCLE engine specifications yamaha mt-03 ES14AA2 PT12B YTZ14s GL1800 EXIDE GEL G 210
Contextual Info: 145372_CalCoastAdv 2/23/11 4:07 PM Page 1 145372_CalCoastAdv 2/23/11 4:07 PM Page 2 Sealed Maintenance Free Battery Features Sealed Post Prevents acid leakage, reduces corrosion, and extends battery life safety valve flame/arrestor relieves excess pressure

TB1229DN

Abstract: ci tb1229dn hp dv5 hp dv6 TB1229DN-59 TB1229
Contextual Info: TB1229DN TO SHIBA TENTATIVE TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB1229DN VIDEO, CHROMA AND SYNCHRONIZING SIGNALS PROCESSING IC FOR PAL/NTSC SYSTEM COLOR TV TB1229DN that is a signal processing IC for the PAL/ NTSC color TV system integrates video, chroma and

TB1226D

Contextual Info: TB1226DN TO SHIBA TENTATIVE TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB1226DN VIDEO, CHROMA AND SYNCHRONIZING SIGNALS PROCESSING IC FOR PA L/N TSC/SECAM SYSTEM COLOR TV TB1226DN that is a signal processing IC for the PAL/ NTSC/SECAM color TV system integrates video, chroma

JST 9FLH-SM1-GB-TB

Abstract: 9FLH-SM1-GB-TB JST Manufacturing 9FLH-SM1-GB-TB FH12A-50S-0.5SH gunze touch screen LQ035Q7DH06 FH12A-50S-0.5SH FH12A-50S-0.5SH
Contextual Info: RECORDS OF REVISION ＭＯＤＥＬ ＳＰＥＣ Ｎｏ：ＬＱ０３５Ｑ７ＤＨ０６ Ｎｏ 2005.06.17 2005.06.29 2005.07.15 2005.10.13 ：ＬＣＰ－０５０２０ NO. ＬＣＰ－０５０２０ PAGE 14 ＬＣＰ－０５０２０Ａ 20,21 2 ＬＣＰ－０５０２０Ｂ

TB1226DN

Abstract: TB1226 TB1226DN data I100IRE pin out tb1226dn ti VP251 z044 crystal 3.582056MHZ tb1226dn-70 tb122gdn
Contextual Info: TOSHIBA TENTATIVE TB1226DN TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB1226DN VIDEO, CHROMA AND SYNCHRONIZING SIGNALS PROCESSING IC FOR P A L/N T SC /SECAM SYSTEM COLOR TV TB1226DN that is a signal processing IC for the PAL/ NTSC/SECAM color TV system integrates video, chroma