LLDRAM Search Results

Contextual Info: Preliminary GS4576S09/18L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18 576Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4576S09/18L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18 576Mb SIO Low Latency DRAM LLDRAMTM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

J2/GS4576C09GL-24I

Contextual Info: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

LLDRAM

Contextual Info: Preliminary GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4576S09/18L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18 576Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

DK97

Abstract: RLDRAM J2/GS4576C09GL-24I
Contextual Info: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAMTM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4576S09/18L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18 576Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

GS4576C36GL-24I

Abstract: GS4576C09GL-24I GS4576C36GL-25I GS4576C18GL-25I GS4576C09GL-25I J2/GS4576C09GL-24I
Contextual Info: GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4303TH20/40GN 180-Pin BGA Commercial Temp Industrial Temp 1.25Gb Low Latency DRAM III LLDRAM III Common I/O Burst of 2, HSTL I/O Up to 600 MHz 1.5 V VDD 2.5 V VEXT 1.2 V VDDQ Features Introduction • 32Mb x 36/40 and 64Mb x 18/20 organizations available

Contextual Info: Preliminary GS4303RH20/40GN 180-Pin BGA Commercial Temp Industrial Temp 1.25Gb Low Latency DRAM III LLDRAM III Common I/O Burst of 4, HSTL I/O Up to 800 MHz 1.5 V VDD 2.5 V VEXT 1.2 V VDDQ Features Introduction • 32Mb x 36/40 and 64Mb x 18/20 organizations available

Contextual Info: Preliminary GS4303TH20/40GN 180-Pin BGA Commercial Temp Industrial Temp 1.25Gb Low Latency DRAM III LLDRAM III Common I/O Burst of 2, HSTL I/O Up to 600 MHz 1.5 V VDD 2.5 V VEXT 1.2 V VDDQ Features Introduction • 32Mb x 36/40 and 64Mb x 18/20 organizations available

GS4288C36GL-24I

Abstract: GS4288C09GL-24I GS4288C18GL-25I GS4288C36GL-25I GS4288C09GL-25I
Contextual Info: GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4288S09/18L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18 288Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4288S09/18L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18 288Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

DK97

Abstract: J2/GS4576C09GL-24I
Contextual Info: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAMTM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4576S09/18L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18 576Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

576mb

Abstract: delta A221 J2/GS4576C09GL-24I
Contextual Info: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

J2/GS4576C09GL-24I

Contextual Info: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

144-BALL

Contextual Info: Preliminary GS4288S09/18L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18 288Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4288S09/18L 144-Ball µBGA Commercial Temp Industrial Temp 32M x 9, 16M x 18 288Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4303R18/36GN 180-Pin BGA Commercial Temp Industrial Temp 1.125Gb Low Latency DRAM III LLDRAM III Common I/O Burst of 4, POD I/O Up to 800 MHz 1.5 V VDD 2.5 V VEXT 1.2 V or 1.0 V VDDQ Features Introduction • 32Mb x 36 and 64Mb x 18 organizations available