GSM GATE CONTROLLER Search Results

Contextual Info: SP14T Antenna Switch Module for 12TRx/2Tx with MIPI I/F CXM3617ER Description The CXM3617ER is a SP14T antenna switch module for GSM / UMTS / CDMA / LTE multi-mode handset. The CXM3617ER has a +1.8 V CMOS compatible decoder with MIPI function. The Sony GaAs junction gate pHEMT JPHEMT MMIC process is used for low insertion loss and high

SP4T Antenna Switch

Abstract: CXM3580AUR
Contextual Info: SP4T + SP6T Antenna Switch Module for 6TRx/2Tx/2Rx with SPI I/F CXM3580AUR Description The CXM3580AUR is a SP4T+ SP6T antenna switch module for GSM/UMTS/CDMA /LTE multi-mode handset. The CXM3580AUR has a +1.8 V CMOS compatible decoder with SPI function. The Sony GaAs junction gate pHEMT JPHEMT MMIC process is used for low insertion loss and high linearity.

3580A

Abstract: CXM3580AUR
Contextual Info: SP4T + SP6T Antenna Switch Module for 6TRx/2Tx/2Rx with SPI I/F CXM3580AUR Description The CXM3580AUR is a SP4T+ SP6T antenna switch module for GSM/UMTS/CDMA /LTE multi-mode handset. The CXM3580AUR has a +1.8 V CMOS compatible decoder with SPI function. The Sony GaAs junction gate pHEMT JPHEMT MMIC process is used for low insertion loss and high linearity.

gsm signal amplifier

Abstract: LMV248 rf detector diode low power Micro Controller National Semiconductor smd diode code DD
Contextual Info: National News June 2002 LMV248 www.national.com/pf/LM/LMV248.html Dual Band GSM Power Controller Typical Application Circuit V DD From BB BS Ramp V DD T x_En OUT_A VfA VfB TC V DD V DD V HOME OUT_B GND COMP2 COMP1 GND V DD PA Directional Couplers RF IN Diplexer

WHL032

Abstract: GSM Gate Controller
Contextual Info: C2O ACCESS CONTROLLER CALL ‘2’ OPEN USING YOUR MOBILE PHONE Features Easy Operation • Easy to Install and Configure using SMS commands No PC required . • User Calls C2O • User Password Controlled • If valid C2O operates Gate • Relay Output rated 1.2KW

Contextual Info: NCS5021 Product Preview Dual Band EDGE Compatible PA Controller The NCS5021 circuit is dedicated to RF Power amplifier control for GSM and DCS standards. It significantly reduces the number of external passive devices while giving the RF designer the capability to

tray qfn 0505

Contextual Info: NCS5021 Product Preview Dual Band EDGE Compatible PA Controller The NCS5021 circuit is dedicated to RF Power amplifier control for GSM and DCS standards. It significantly reduces the number of external passive devices while giving the RF designer the capability to

dcs response time

Abstract: 16 pins qfn 3x3 amplifier gsm QFN3x3-12 HP 1910 Switch
Contextual Info: NCS5021 Product Preview Dual Band EDGE Compatible PA Controller The NCS5021 circuit is dedicated to RF Power amplifier control for GSM and DCS standards. It significantly reduces the number of external passive devices while giving the RF designer the capability to

HG62G

Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Contextual Info: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2

rf detector diode

Abstract: cfdb DIODE RF DETECTOR LMV248 LMV248LQ LMV248LQX RF Directional Couplers
Contextual Info: LMV248 Dual Band GSM Power Controller General Description Features The LMV248 RF power amplifier controller allows simple implementation of transmit power control loops in GSM and DCS/PCS and mobile phones. The LMV248 supports, GaAs HBT and bipolar RF power amplifiers. The device operates

gsm signal amplifier circuit diagram

Abstract: IC internal structure rf detector diodes
Contextual Info: LMV248 Dual Band GSM Power Controller General Description Features The LMV248 RF power amplifier controller allows simple implementation of transmit power control loops in GSM and DCS/PCS and mobile phones. The LMV248 supports, GaAs HBT and bipolar RF power amplifiers. The device operates

Contextual Info: MOTOROLA Order this document by MDC5100/D SEMICONDUCTOR TECHNICAL DATA M DC5100 Advance Information A ntenna S w itch Controller The MDC5100 is designed to control GaAs RF switches which require positive and negative going control voltages to select the switch path. All input control signals are

Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip

gsm signal amplifier circuit diagram

Abstract: MGD629
Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Am plifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier

Schottky Diodes at 915MHZ

Abstract: MRFIC1817 LT317 R13B1 AN1602 LT17 R13C AN1697 DCS1800 GSM900
Contextual Info: Order this document by AN1697/D AN1697 GSM900/DCS1800 Dual-Band 3.6 V Power Amplifier Solution with Open Loop Control Scheme Prepared by: Jacques Trichet, Gilles Montoriol, Cyril Quennehen, Philippe Riondet, Brigitte Ray, Philippe Didier Motorola, Inc., Semiconductor Prouducts Section, Wireless Subcriber Systems Group

LT5503

Contextual Info: LTC4402-1/LTC4402-2 Multiband RF Power Controllers for EDGE/TDMA FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Supports AM Modulation in EDGE/TDMA ANSI-136 Applications Single Output RF Power Amplifier Control (LTC4402-1)

GGX5

Abstract: nimh spice model charge LTC4403-1 LTC4403-1EMS8 LTC4403-2 LTC4403-2EMS LT5503
Contextual Info: Final Electrical Specifications LTC4403-1/LTC4403-2 Multiband RF Power Controllers for EDGE/TDMA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Supports AM Modulation in EDGE/TDMA ANSI-136 Applications Single Output RF Power Amplifier Control

LT5503

Contextual Info: LTC4403-1/LTC4403-2 Multiband RF Power Controllers for EDGE/TDMA FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Supports AM Modulation in EDGE/TDMA ANSI-136 Applications Single Output RF Power Amplifier Control (LTC4403-1)

LTC4402-1

Abstract: LTC4402-1EMS8 LTC4402-2 LTC4402-2EMS LTC4402-X nimh spice model charge nd1 marking code 900mhz Diplexer phase shifter DC-3GHz LTC5507
Contextual Info: LTC4402-1/LTC4402-2 Multiband RF Power Controllers for EDGE/TDMA U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Supports AM Modulation in EDGE/TDMA ANSI-136 Applications Single Output RF Power Amplifier Control (LTC4402-1)

cellular phone amplifier power control transistor

Abstract: mobile rf power amplifier transistor nd1 marking code RF AMPLIFIER FOR 10MHz LTC4403-1 LTC4403-1EMS8 LTC4403-2 LTC4403-2EMS RF schottky diode 900mhz Diplexer
Contextual Info: LTC4403-1/LTC4403-2 Multiband RF Power Controllers for EDGE/TDMA U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Supports AM Modulation in EDGE/TDMA ANSI-136 Applications Single Output RF Power Amplifier Control (LTC4403-1)

ET70

Abstract: sim card controller ic
Contextual Info: Chip Card & Security SLE 76C720P 296 kBytes User-ROM 72 kBytes E²PROM 8 kBytes RAM 16-bit security controller optimized for mobile communication applications in 0.13 µm CMOS technology Short Product Information 10.08 SLE 76C720P Short Product Information

iso7816 sim

Abstract: ISO7816 NCN6011 NCN6011DMR2 NCN6011DTB NCN6011DTBR2
Contextual Info: NCN6011 Low Power Level Shifter The NCN6011 is a level shifter analog circuit designed to translate the voltages between a SIM Card and an external micro controller. The device handles all the signals needed to control the data transaction between the external Card and the MPU.

ET70

Abstract: SLE76C
Contextual Info: Chip Card & Security SLE 76C722P 196 kBytes User-ROM 72 kBytes E²PROM 6 kBytes RAM 16-bit security controller optimized for mobile communication applications in 0.13 µm CMOS technology Short Product Information 10.08 SLE 76C722P Short Product Information

HF power amplifier

Abstract: ze 003 ic CGY2010G LQFP48 LQFP64 LQFP80 PCA5075 SA1620
Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip