3580A Search Results

Contextual Info: Frequency Synthesizer 50Ω KSN-3580A+ 3440 to 3580 MHz The Big Deal • Fractional N synthesizer • Low phase noise and spurious • Robust design and construction • Small size 0.800" x 0.584" x 0.240" CASE STYLE: DK1171 Product Overview The KSN-3580A+ is a Frequency Synthesizer, designed to operate from 3440 to 3580

AS 3558.5

Abstract: 3580A ADF4153 KSN-3580A
Contextual Info: Frequency Synthesizer 50Ω KSN-3580A+ 3440 to 3580 MHz The Big Deal • Fractional N synthesizer • Low phase noise and spurious • Robust design and construction • Small size 0.800" x 0.584" x 0.240" CASE STYLE: DK1171 Product Overview The KSN-3580A+ is a Frequency Synthesizer, designed to operate from 3440 to 3580 MHz

3580A

Contextual Info: KSN-3580A+ Frequency Synthesizer Typical Performance Data Power Output Vs Frequency 10 -45ºC 9 +25ºC Power Output dBm 8 +85ºC 7 6 5 4 3 2 1 3440 3460 3480 3500 3520 3540 3560 3580 3560 3580 Frequency (MHz) 2nd Harmonics Vs Frequency 2 ndHarm.Suppression (dBc)

Contextual Info: Frequency Synthesizer 50Ω KSN-3580A+ 3440 to 3580 MHz The Big Deal • Fractional N synthesizer • Low phase noise and spurious • Robust design and construction • Small size 0.800" x 0.584" x 0.240" CASE STYLE: DK1171 Product Overview The KSN-3580A+ is a Frequency Synthesizer, designed to operate from 3440 to 3580

3580A

Abstract: 2SC4696 9010V
Contextual Info: O rd e rin g n u m b e r: EN 3580A _ 2SC4696 NPN Epitaxial Planar Silicon Darlington Transistor Driver Applications Applications • Motor drivers, printer hammer drivers. Features • Darlington connection. •On-chip Zener diode of 90± 10V between collector and base.

Contextual Info: Frequency Synthesizer 50Ω KSN-3580A+ 3440 to 3580 MHz The Big Deal • Fractional N synthesizer • Low phase noise and spurious • Robust design and construction • Small size 0.800" x 0.584" x 0.240" CASE STYLE: DK1171 Product Overview The KSN-3580A+ is a Frequency Synthesizer, designed to operate from 3440 to 3580

Contextual Info: KSN-3580A+ Frequency Synthesizer Typical Performance Data FREQ. MHz 3440 3446 3462 3478 3494 3510 3526 3542 3558 3574 3580 POWER OUTPUT (dBm) HARMONICS (dBc) PLL CURENT (mA) -45ºC +25ºC +85ºC -45ºC F2 +25ºC +85ºC -45ºC F3 +25ºC +85ºC -45ºC +25ºC

decoder noninverting

Contextual Info: jg lS I CONSUMER MICROCIRCUITS LTD F U N C T IO N A L S C H E M A T IC Clock 0 o D ifieren t ¡al Inputs OF THE F X 3 0 9 1 Adaption Ah> -*~ Lim iter Algorithm -►o D ifferential -►o -K> O utputs A n a lo g u e q_ B ia s S ig n a l -oThree State B ias Output

bys35

Contextual Info: 3.5 0.138] 17.5 [0.689] 1 [0.039] 1° \0 \ -°1 u to -<>3 V r*- -°11 CNJ ro r*- in JH 7 \ —G 5 >-□ 8 □ 6 D9 r ^ 4 |- D ro IIZJ 5.5 [0.217] 5 [0.197] 5 [0.197] ^ 3 [0.118] r2.5 0.098] 1.5 [0.059] TERMINAL NUMBER -Q r" b % 8o tn ö CD o SPECIFICATIONS:

DTMF Tone Generator

Abstract: 7046A S2559E Transistor ALY c2
Contextual Info: AMI S2559E/F AMERICAN MICROSYSTEMS, INC. August 1996 DTMF Tone Generator Features • O scillator Resistor On Chip • On-Chip Generation of a Reference Voltage to Assure Am plitude Stability of the Dual Tones Over the Operating Voltage and Temperature Range

CR diode transient

Abstract: 4065AN sml3565an SML3580AN
Contextual Info: SEflELAB PLC bGE D 0133187 □□G07SG m i ISMLB lili SEME SML4065AN SML3565AN SML4080AN 3580AN LAB 400V 10.0A 0.6512 350V 10.0A 0.6512 400V 9.0A 0.8012 350V 9.0A 0.80Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

ln2900

Abstract: 3580A A440a
Contextual Info: EW n Nm FVRB RFI Power Line Filters Three Phase One Stage Filter for Regenerative Converters_ General Specifications - Maximum operating voltage: 520 Vac - Operating frequency: DC - 60Hz - Hipot test voltage: L/N->PE: 3000 Vdc 2s L->N: 2900 Vdc 2s

S2559A

Abstract: S2559C S2559E plotter hp S2559B hp plotter 3580A 2559E
Contextual Info: AMI A S ub sid iary o f G ould Inc. S2559A/B/E/F DTMF TONE GENERATOR Features □ W ide Operating Supply Voltage Range: 3.5 to 13.0 Volts A,B 2.5 to 10 Volts (E,F) □ Low Power CMOS Circuitry A llow s Device Power to be Derived Directly from the Telephone Lines or

3 pins Variable resistor 470K ohm

Abstract: 3580A compare encoder FX309 FX-309 DELTA MODULATION ENCODER
Contextual Info: 2 3 7 4 3 7 t. O G D O S aS 1 cncR 7 5 i Cf F U N C T IO N A L S C H E M A T IC C lo c k 0 OF THE F X 3 0 9 I D iff e r e n tia l Inputs -*-o D if f e r e n t ia l -*~o - x > O u tp u ts A d a p tio n A lg o rith m Lim iter A n a lo g u e o_ B ias S ig n a l

NTE5810

Abstract: NTE5811 NTE5870 NTE5891 NTE587
Contextual Info: NTE5810 & NTE5811, NTE5870 thru NTE5891 Silicon Power Rectifier Diode, 12 Amp Description: The NTE5810, NTE5811, and NTE5870 through NTE5891 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.

Contextual Info: ~ r - 7 5 - ì cf F U N C T IO N A L SC H EM A TIC Clock 0 OF THE F X 3 0 9 o—- D iffe re n tia l0 Inputs D ifferen tial -X> O utputs -x> Algorithm Analogue 0_ < Bias Signal -oThree State Bias O utput Digital i t ° Output Inverter O utput

3580A

Abstract: CXM3580AUR
Contextual Info: SP4T + SP6T Antenna Switch Module for 6TRx/2Tx/2Rx with SPI I/F 3580AUR Description The 3580AUR is a SP4T+ SP6T antenna switch module for GSM/UMTS/CDMA /LTE multi-mode handset. The 3580AUR has a +1.8 V CMOS compatible decoder with SPI function. The Sony GaAs junction gate pHEMT JPHEMT MMIC process is used for low insertion loss and high linearity.

APT4065AN

Contextual Info: ADVANCFD POWER TECHNOLOGY M IE D • OBSTIÜI GOOQ45b A ? D D V P O T e . . « r . .1 rru POWER MOS IV A N W c APT4065AN APT3565AN APT4080AN 3580AN Ô s Ö MÖ H A V P C E E R h n o D ■ T -3 « -i'2 > l o g y 400V 10.0A 0.65 Q 350V 10.0A 0.65 ß 400V 9 .0 A 0 .8 0 «

Tele Quartz Group Crystal Oscillator

Abstract: S2559E
Contextual Info: AMI S2559E/F AMERICAN MICROSYSTEMS, INC. DTMF Tone Generator August 1996 Features • W ide Operating Supply Voltage Range: 2.5 to 10 Volts • Low Power CMOS Circuitry Allows Device Power to be Derived Directly from the Telephone Lines or from Small Batteries, e.g., 9V

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

NTE5810

Abstract: NTE5811 NTE5870 NTE5891 NTE587
Contextual Info: NTE5810 & NTE5811, NTE5870 thru NTE5891 Silicon Power Rectifier Diode, 12 Amp, DO4 Description: The NTE5810, NTE5811, and NTE5870 through NTE5891 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.

S2579

Abstract: crystal 3580A 3x4 keyboard DTMF TONE GENERATOR 3580A circuit diagram of dtmf generator quartz crystal Xtal 3.58Mhz
Contextual Info: M A M l S2579 ^ • ■ S T A N D A R D PRODUCTS DTMF Tone Generator With Binary Input February 1993 Features General Description • Available in 16 pin Small Outline IC Package for Space Savings • Wide Operating Supply Voltage Range 3.0 to 10.0 Volts • Direct Interface to TTL 4-Bit Logic for Binary Inputs

Contextual Info: S2579 B A IM I AMERICAN MICROSYSTEMS, INC. DTMF Tone Generator With Binary Input August 1996 Features General Description • Available in 16 pin Small Outline IC Package for Space Savings • Wide Operating Supply Voltage Range 3.0 to 10.0 Volts • Direct Interface to TTL 4-Bit Logic for Binary Inputs

Contextual Info: A M I A Su b sid ia ry of G o u ld Inc. S2559A/B/E/F DTMF TONE GENERATOR Features □ W ide Operating Supply Voltage Range: 3.5 to 13.0 Volts A,B 2.5 to 10 Volts (E,F) □ Low Power C M O S Circuitry Allow s Device Power to be Derived Directly from the Telephone Lines or