GS DRIVER Search Results
GS DRIVER Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 55462H/B | Rochester Electronics LLC | 55462 - Dual peripheral driver |
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| DS1632J-8/B | Rochester Electronics LLC | DS1632 - Dual Peripheral Driver |
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| DS1633J-8/B | Rochester Electronics LLC | DS1633 - CMOS Dual Peripheral Drivers |
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| DS1634J-8/883 | Rochester Electronics LLC | DS1634 - Peripheral Driver, 2 Driver, BIPolar, CDIP8 - Dual marked (5962-8982101PA) |
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| 54FCT244DM/B | Rochester Electronics LLC | 54FCT244 - Bus Driver, 2-Func, 4-Bit, True Output, CMOS |
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GS DRIVER Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
GS-D500A
Abstract: GS-D550 GS-D350M GS-D050 GS-C200 GS-C200S GS-D200 GS-D200M GS-D200S GS-DC200
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gs-d050gs-d200gs-d200sgs-d200m+7 | |
motor driver 20A
Abstract: HD 21.3 12V BIPOLAR STEPPER MOTOR gs-r424 12V bipolar STEPPER MOTOR 2a GSR-405
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gs-d050gs-d200gs-d200sgs-d200m+12 | |
GS-D550
Abstract: gsd200s microstep
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gs-d250mgs-d350mgs-d500ags-d550+8 | |
"Stepper Motor"
Abstract: stepper motor stepper stepper motor driver bipolar microstep BIPOLAR STEPPER MOTOR bipolar stepper motor driver GS-D200S
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gs-d050gs-d200gs-d200sgs-d200m+7 | |
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Contextual Info: Temic Siliconix_YP0808B/L/M, YP1008B/L/M P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number rDS on Max (Q) V(BR)DSS Min (V) VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M 5 @ V GS= 5 @ V GS= 5 @ V Gs = 5 @ V Gs = 5 @ V Gs = 5 @ V Gs = |
OCR Scan |
yp0808b/l/myp1008b/l/mvp0808bvp0808l+6 | |
MSM82C84A-2
Abstract: M82C84 m82c51 m80c85ah M81C55 m82c51a M82C53-5 m82c55a5 M80C88A-2 QFJ20-P-S350-1
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e2o0012-27-x2msm82c84a-2rs/gs/jsmsm82c84a-2rs/gsmsm80c86a-10+13 | |
2222l
Abstract: siliconix VN10KM VN0610L VN10KE VN10KM VN2222L
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OCR Scan |
vn0610lvn10ke/kmvn2222lvn10ke+5 | |
asus m2n-mx
Abstract: m2n-mx Transcend 16gb asus m2n TS8GSSD10-M asus TS16GSSD10-M asus block diagram Transcend DD15
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ts2gssd10-mts4gssd10-mts8gssd10-mts16gssd10-m+9 | |
MOSFET 2n6659
Abstract: 2N6660 SILICONIX
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OCR Scan |
2n6659/2n6660vq1004j/p2n6659p-37994--+3 | |
TADC-1000
Abstract: DRFM SEAF-50-06 spi demux SX55 LVDSEXT25 LVDSEXT-25 LVDS-25 Phoenix PPC
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tadc-1000drfmseaf-50-06spi demux+5 | |
MSM82C84A-2RS
Abstract: 82C84A-2 MSM80C86A-10 MSM80C88A-10 MSM82C84A-2GS-K MSM82C84A-2JS QFJ20-P-S350-1 xtal osc
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e2o0012-16-81msm82c84a-2rs/gs/jsmsm82c84a-2rs/gsmsm80c86a-10+7 | |
0610L
Abstract: 2222l 10kls VN10KLS
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OCR Scan |
vn0610lvn10ke/klsvn2222l0610l+5 | |
2222ll
Abstract: 10LLS ST C 236 DIODE 0605T
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OCR Scan |
vn10le/llsvn0605tvn0610llvn2222ll+7 | |
IRFH8321Contextual Info: IRFH8321PbF V DS V gs max RDS on max 30 V ± 20 V 4.9 (@V GS = 10V) m (@V GS = 4.5V) 6.8 Qg typ. 19.4 nC i A ID 25 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET PQFN 5X6 mm Applications •Synchronous MOSFET for high frequency buck converters Features |
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irfh8321pbfirfh8321trpbfirfh8321 | |
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222ll
Abstract: 10LLS
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OCR Scan |
vn10llsvn0605tvn0610llvn2222ll+4 | |
GS-D200S
Abstract: GS-D200
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gs-d200gs-d200s | |
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Contextual Info: IRFH8321PbF V DS V gs max RDS on max 30 V ± 20 V 4.9 (@V GS = 10V) m (@V GS = 4.5V) 6.8 Qg typ. 19.4 nC i A ID 25 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET PQFN 5X6 mm Applications •Synchronous MOSFET for high frequency buck converters Features |
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irfh8321pbfirfh8321trpbf | |
t416Contextual Info: SM013R/X New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET * * * & PRODUCT SUMMARY r D S (o n) ( & ) lD(mA) 1.2 @ V GS= -4 .5 V -3 5 0 1.6 @ V GS = -2 .5 V -3 0 0 2.7 V -1 5 0 VDS(V) ' A v *N -2 0 @ V Gs = -1 .8 ( £ ) ESD Protected 2000 V FEATURES |
OCR Scan |
sm013r/x1013r/xsc-75as-02464--+2 | |
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Contextual Info: HMC660LC4B v01.0807 6 0.02 - 4.5 GHz WIDEBAND, 3 GS/s TRACK-AND-HOLD AMPLIFIER Typical Applications Features The HMC660LC4B is ideal for: 4.5 GHz Input bandwidth 1 Vpp Full Scale 3 GS/s Maximum Sampling Rate TRACK-AND-HOLD - SMT • RF ATE Applications 61 dB SFDR (4 GHz / 0.5 Vpp Input, CLK = 1 GS/s) |
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hmc660lc4b | |
130N03M
Abstract: 130n03 IEC61249-2-21 JESD22
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bsz130n03msiec61249-2-21130n03m130n03+1 | |
BSC014N03MS
Abstract: 014N03MS IEC61249-2-21 JESD22
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bsc014n03msiec61249-2-21014n03msjesd22 | |
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Contextual Info: BSC037N03MSC G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 3.7 mΩ V GS=4.5 V 4.8 |
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bsc037n03msciec61249-2-21037n03ms | |
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Contextual Info: BSC043N03MSC G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 4.3 mΩ V GS=4.5 V 5.6 |
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bsc043n03msciec61249-2-21043n03ms | |
IEC61249-2-21Contextual Info: BSO083N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% Avalanche tested 30 V V GS=10 V 8.3 mΩ V GS=4.5 V 10.5 |
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bso083n03msiec61249-2-21083n03ms | |