VP1008M Search Results

Contextual Info: Temic Siliconix_YP0808B/L/M, YP1008B/L/M P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number rDS on Max (Q) V(BR)DSS Min (V) VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M 5 @ V GS= 5 @ V GS= 5 @ V Gs = 5 @ V Gs = 5 @ V Gs = 5 @ V Gs =

VP0808B

Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M VQ2006J VQ2006P
Contextual Info: VPMH10 Part Numbers: VP1008L, VP0808L, VP1008M, VP0808M, VQ2006P, VQ2006J, VP1008B, VP0808B Leakage Currente Ohmic Region Vos— d r a in Tc—CASE TEMPERATURE °C SO U R C E VOLTAGE (VOLTS) ON Resistance Characteristics O Z I -60 -2 0 20 60 100 140 180

VP0808B

Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M
Contextual Info: VP0808B/L/M, VP1008B/L/M Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M -80 -100 1 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = -10 V 5 @ VGS = -10 V 5 @ VGS = -10 V

VP1008M

Abstract: VP1008
Contextual Info: am sA VP1008 s e rie s P-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART NUMBER V BR DSS VP1008B -100 VP1008L VP1008M T TO-39 (TO-205AD) BOTTOM VIEW •d (A) PACKAGE 5 -0.79 TO-39 -100 5 -0.28 TO-92 -100 5 -0.31 TO-237 1 SOURCE 2 GATE 3 & CASE-DRAIN

Contextual Info: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary P a rt N u m b er V BR DSS M in (V) rDS(on) M ax (Q) V c sw o tV ) 5 @ VGS- - 1 0 V -2 to -4.5 -0.88 5 @ VGs - -10 V -2 to -4.5 -0.28 VP0808M 5 @ V os - -10 V -2 to -4.5

JR 3610

Abstract: RT 083 206af 44464
Contextual Info: TELEDYNE COMPONENTS - 2ÖE D Mi ÛTiTtOE 000 ^40^ b • ■ -T-29-25 — cfTlHJlß2l0\7zi V P 0 8 0 8 , V P 1 00 8 SEMICONDUCTOR P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Sorted CWp* tn Wsffla Pack TO-226AA (TO-82 Plastic Package

Contextual Info: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)

vp0300m

Abstract: VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B

2sk to-92

Abstract: VNS012A Siliconix v020 VNS009A VNS009D VNS013A VNT0080 VNT008A VNT009A
Contextual Info: - 330 - 13=25=0 Si £ tt Vd s or € * Vd g % (V) Vg s Id * /CH (V) (A) 4# •u Pd Ig s s loss max * /CH (W) (nA) Vg s (V) Vd s (V) (kiA) (V) (V) (nA) 14 (Ta=25°C) b(on) Vd s = Vg s Ciss g fs Coss Crss ft & flt % V g s =0 (max) *typ V g s (0) (V) *typ (A)

VP0808B

Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 5.0 5.0 -90 -60 -30 5.0 5.0 2.0 -8 0

BSR78

Abstract: VP0300M VP0808L 041 itt diode VP0300B VP0808B VP0808M VP1008B VP1008L VP1008M
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B

VP0808B

Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M
Contextual Info: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = –10 V –2 to –4.5 –0.88 5 @ VGS = –10 V –2 to –4.5 –0.28 VP0808M 5 @ VGS = –10 V

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

VPDS06

Contextual Info: VPDS06 CT*Siliconix incorporated TYPICAL CHARACTERISTICS T ransconductance C pF I d ÌA) V DS (V) On-Resistance vs. Junction Temperature 's (A) V SD (V) Revised (02/11/91) -0 .3 -0 .6 -0 .9 -1 .2 V GS (V) -1 .5 -1 .8 -2.1 6-203 ffX 'Sificonix VPDS06 in c o r p o r a te d

VP0808B

Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B

VP100

Abstract: VP1001P VP0300B VP0300M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 5.0 5.0 2.5 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B 0.37 0.37 0.48 1.0

VP0808M

Abstract: IN400 VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B

TO-205AD

Abstract: VP0808M VP1008B TO-237 VP0808B VP0808L VP1008L VP1008M VP100
Contextual Info: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = –10 V –2 to –4.5 –0.88 5 @ VGS = –10 V –2 to –4.5 –0.28 VP0808M 5 @ VGS = –10 V

vp0808b

Contextual Info: Tem ic VP0808B/L/M, VP1008B/L/M_ Siliconix P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number I d A rBS(on) Max (Q) VGS(th) (V) 5 @ VGS = - 1 0 V - 2 to -4 .5 -0 .8 8 5 @ V GS = - 1 0 V - 2 to -4 .5 -0 .2 8 VP0808M 5 @ V o s = -10 V

VP0300M

Abstract: k 2541 30v IN400 VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B

2106a

Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
Contextual Info: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2

VP0808B

Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M VP0808B Siliconix
Contextual Info: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = –10 V –2 to –4.5 –0.88 5 @ VGS = –10 V –2 to –4.5 –0.28 VP0808M 5 @ VGS = –10 V

s22b

Abstract: VP0808CHP VP0808L VP0808M VP10 VP1008 VP1008CHP VP1008L VP1008M 3024F
Contextual Info: semiconductor - — dse d l^üösaEb ooDiiia □ | - — - - topaz T-29-25 — ' T T f M i l ß - V P 0 8 0 S ,V P 100 SEMICONDUCTOR_ _ P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Sorted Chips in Waffle Pack