GS 069 LF Search Results

GS 069 LF

Abstract: HCA-120 BUK637-500A BUK637-500B BUK637-500C
Contextual Info: N AMER P H I L IPS /D IS CR ET E 55E D • Lb53T31 OQSQbôO S ■ PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C T - 3 ‘M S ' GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a

S3V 09

Abstract: S3V 03
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8835 Power GaAs FETs Packaged Features • High power - P idB = 24 dBm at f = 8 GHz • High gain - G idB = 8 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)

7d graphic

Contextual Info: Control Systems Serial and Parallel Communications NULL MODEM: A simple device or set of connectors that switches the receive and transmit lines a 3-wire RS-232C connector. PARITY: An RS-232C error detection scheme that can detect an odd number of transmission errors.

Contextual Info: ^5 4 ^0 2 ^ DD17A45 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1ST MGF1412B LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 4 1 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use is S to X band ampli­ U n i t : m i l l i m e t e r s inches

Contextual Info: PD-9.1358D International IQR Rectifier IRLZ24NS/L HEXFET Power M O S F E T • Logic-Level Gate Drive • Advanced Process Technology • Surface Mount IRLZ24NS • Low-profilethrough-hole(IRLZ24NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

IRFZ44NS

Contextual Info: International ^Rectifier PD91315 IRFZ44NS preliminary HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier

BUK637-600A

Abstract: BUK637-600B BUK637-600C BUK637
Contextual Info: N AMER P H I L I P S / D I S C R E T E SSE D • ^ 5 3 = 1 3 1 OGEabflS 4 PowerMOS transistor Fast Recovery Diode FET BUK637-600A * BUK637-600B BUK637-600C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a

13N06

Abstract: 8N06 13N06E 13-N06 13n0 4N20 ldo25 3N06E smd marking QTA me4n20
Contextual Info: SELECTOR GUIDE Products Type Case Style + TO-25 1 ID 4 ME4N20 ME4N20-F* 4 ME6NlO MEGNlO-F* 6 ME8N06E ME8NOGE-F* 8 ME1 3N06E ME13NOGE-F* 13 VDSS RDS(on w 63 -d i ~ ~ ~ 4 PD w9 Page 0.7 20 4 100 0.25 20 8 60 0.15 20 12 60 0.12 1.75 ’ Ta=25OC I 16 60 0.6

IRG4PC40FD

Contextual Info: International l O R Rectifier PD 9.1464A IRG4PC40FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .

f5210s

Contextual Info: International IOR Rectifier pd-9.i 4o5b IR F5210S preliminary HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated

RT8152B

Abstract: rt8152 G995P1U 95A hall effect sensor UP6111AQDD RT9025 ic AH44 95A sensor hall VSS210 Atheros ar9
Contextual Info: 1 2 3 PCB STACK UP 4 5 6 7 8 BU3 Block Diagram LAYER 1 : TOP LAYER 2 : GND1 LAYER 3 : IN1 A LAYER 4 : GND PENRYN-SFF LAYER 5 : VCC 478P uFCPGA LAYER 6 : IN2 A P3,4 FSB LAYER 7 : GND2 FSB 667/800/1066MHZ DDR SYSTEM MEMORY LAYER 8 : BOT DDRIII-SODIMM1 DDRIII-SODIMM2

TRANSISTOR noise figure measurements

Abstract: Hewlett-Packard application note 970 et1102 14CL 40 HFET-1101 HFET-1102 2N6680 D5880 application note Hewlett-Packard 970 line AMPLIFIER satellite
Contextual Info: NEW H E W L E T T P A C KARD 2N6680 HFET-1101 HFET-1102 MICROWAVE GaAS FETS GaAs FETs COMPONENTS Features LOW NOISE FIGURE 1.6 dB Typical at 4 GHz (2N6680) 1.7 dB Maximum at 4 GHz (HFET-1102) 1.5 dB Typical a HIGH GAIN 16 dB Typical at 4 GHz HIGH OUTPUT POWER

rt8152

Abstract: WPCE775CA0DG UP6111AQDD TPS51116REGR ME2N7002E ah44 hall 4506 gen WPCE775 RT8152B SLG8
Contextual Info: 1 2 3 PCB STACK UP 4 5 6 7 8 BU3 Block Diagram LAYER 1 : TOP LAYER 2 : GND1 LAYER 3 : IN1 A LAYER 4 : GND PENRYN-SFF LAYER 5 : VCC 478P uFCPGA LAYER 6 : IN2 A P3,4 FSB LAYER 7 : GND2 FSB 667/800/1066MHZ DDR SYSTEM MEMORY LAYER 8 : BOT DDRIII-SODIMM1 DDRIII-SODIMM2

MACH5-128/68-7/10/12/15

Contextual Info: COM’L: -7/10/12/15 PRELIMINARY AMD£I IND: -10/12/15/20 The MACH5-128 MACH5-128/68-7/10/12/15/20 MACH5-128/104-7/10/12/15/20 MACH5-128/120-7/10/12/15/20 Fifth Generation MACH Architecture DISTINCTIVE CHARACTERISTICS • Fifth generation MACH architecture

wpc8763ldg

Abstract: RTM875T-606 CX20561 toshiba satellite l50 WPC8763 fds8884 OZ129T winbond wpce775 isl88731 CX20561-12Z
Contextual Info: 1 2 3 4 5 6 7 8 TE1 Block Diagram PCB STACK UP LAYER 1 : TOP LAYER 2 : SGND A HDMI HDMI Transmitter Sil1392 Page 21 LAYER 3 : IN1 Azalia CLOCK GENERATOR Intel CK505 ICS9LPR363 Page 21 Merom LAYER 4 : IN2 Page 2 A 35W CRT Page 20 LAYER 5 : VCC Page 3,4 LAYER 6 : BOT

731 tico

Abstract: tico 731 marking caa TQFP Package AMD tico 731 103 mach 1 family amd
Contextual Info: Zi PRELIMINARY The MACH 5 Value Plus Family Advanced Micro Devices Fifth Generation MACH Architecture DISTINCTIVE CHARACTERISTICS • Fifth generation MACH architecture — 5-V devices will not overdrive 3-V inputs safe for mixed voltage — Safe for hot socketing

CX20561

Abstract: cx20561-12z toshiba satellite c655 toshiba satellite c640 cx2056 wpc8763ldg 31TE1MB01N0 intel 4965AG g909 WPCE775
Contextual Info: 1 2 3 4 5 6 7 8 VER : E3D Description 31TE1MB0010 TE1M MB PM45/RB/MS WO CPU 31TE1MB0120 TE1M MB(PM45/MAIN/RB/HDMI/CIR)WO CPU 31TE1MB0130 TE1M MB(GM45/EXP/NO CIR/MS)WO CPU 31TE1MB0140 TE1M MB(GM45/GS/EXP/MS)WO CPU 31TE1MB0170 TE1M MB(GM45/GS/EXP/LC)WO CPU PENRYN

S3 TRIO 64

Abstract: AY 5 4007 0062g GS 069 HF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF136 MRF136Y The RF M OSFET Line RF P o w e r Field E ffe c t T ra n sisto rs N-Channel Enhancement-Mode M OSFETs 15 W, 30 W 2-400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed fo r w id e b a n d large-signal a m p lifie r and o scilla to r app licatio n s in the 2 to

IT8502E

Abstract: tps51125 intel g41 crb isl6251 isl6251ahaz inventec TPS51610 RTS5159 ALC269X BAP31
Contextual Info: 5 4 3 2 1 THIS DRAWING AND SPECIFICATIONS, HEREIN, ARE THE PROPERTY OF INVENTEC CORPORATION AND SHALL NOT BE REPODUCED, COPIED, OR USED IN WHOLE OR IN PART AS THE BASIS FOR THE MANUFACTURE OR SALE OF ITEMS WITHOUT WRITTEN PERMISSION, INVENTEC CORPORATION, 2009 ALL RIGHT RESERVED.

IT8502E

Abstract: RTM875T-606-VD-GRT G9091-180T11U intel g41 crb isl6251 ITE8502 tps51125 schematic intel g41 ITE8502F TPS51610
Contextual Info: 5 4 3 2 1 D D ACER_SJM31 C C MAIN BOARD 2009.05.04 B B A A EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE Monday, May 04, 2009 DATE 2009-ECO-006989 CHANGE NO. 5 SIZE= FILE NAME: XXXX-XXXXXX-XX P/N XXXXXXXXXXXX A REV 4 3 2 TITLE INVENTEC ACER_SJM31 VER:

LT1012A

Contextual Info: LT1012A/LT1012 Picoamp Input Current, Microvolt Offset, Low Noise Op Amp DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ U ■ OP-07 Type Performance: at 1/8th of OP-07’s Supply Current at 1/20th of OP-07’s Bias and Offset Currents Guaranteed Offset Voltage: 25µV Max

allen bradley potentiometer type j

Abstract: TRANSISTOR 2N3609 OP07S LT1012A 2N3609 LT1012 allen bradley 10k pot LT1012S8 OP-07 10k resistor array SIP
Contextual Info: LT1012A/LT1012 Picoamp Input Current, Microvolt Offset, Low Noise Op Amp DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ OP-07 Type Performance: at 1/8th of OP-07’s Supply Current at 1/20th of OP-07’s Bias and Offset Currents Guaranteed Offset Voltage: 25µV Max

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that

TRANSISTOR 2N3609

Abstract: SN1012 2N3609 allen bradley potentiometer type j OP07S LM11 op amp LT1012A allen bradley 10k pot LT1012 allen bradley potentiometer type j 1k
Contextual Info: LT1012A/LT1012 Picoamp Input Current, Microvolt Offset, Low Noise Op Amp DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ OP-07 Type Performance: at 1/8th of OP-07’s Supply Current at 1/20th of OP-07’s Bias and Offset Currents Guaranteed Offset Voltage: 25µV Max