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    Samtec Inc MTSW-105-08-G-S-068-RA

    Pin Header, Board-to-Board, 1 Rows, 5 Contacts, Through Hole, MTSW Series, Unshrouded, Right Angle - Bulk (Alt: MTSW-105-08-G-S-068-RA)
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    Samtec Inc MTSW-102-13-G-S-068-RA

    - Bulk (Alt: MTSW-102-13-G-S-068-RA)
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    Abracon Corporation ASPIAIG-S8050-680M-T

    Power Inductors - SMD IND 68.00 uH 1.450 A 252.00 mOhm
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    Mouser Electronics () ASPIAIG-S8050-680M-T 899
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    ASPIAIG-S8050-680M-T
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    Renesas Electronics Corporation R5F12068GSP#30

    16-bit Microcontrollers - MCU 16-BIT GENERAL MCU RL78/G15 8K 20LSSOP -40 to 105 C
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    Mouser Electronics () R5F12068GSP#30 490
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    R5F12068GSP#30 490
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    Fairview Microwave Inc FMWGS6068

    High Frequency / RF Relays WR-112 Waveguide Electromechanical Relay Failsafe, X Band Switch SPDT/DPDT 10 GHz Max Freq., 7,000 Watts CPR Flat, 12V, Indicators
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    GS 068 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRF7101

    Abstract: MS-012AA
    Contextual Info: IRF7204PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Q gs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage


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    IRF7204PbF EIA-481 EIA-541. IRF7101 MS-012AA PDF

    EIA-541

    Abstract: F7101 IRF7101 MS-012AA
    Contextual Info: IRF7303PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient Qg Q gs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage


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    IRF7303PbF EIA-481 EIA-541. EIA-541 F7101 IRF7101 MS-012AA PDF

    IRL640

    Abstract: IRF1010 IRL640A 91089
    Contextual Info: PD-9.1089 International H ü Rectifier IRL640 HEXFET Power M O SFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs =4V & 5V Fast Switching Ease of Paralleling Simple Drive Requirements


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    IRL640 O-220 T0-220 200Vas I0B83) D-6380 IRL640 IRF1010 IRL640A 91089 PDF

    MOSFET SMD MARKING CODE 618

    Abstract: SMD DIODE MARKING S28 diode smd marking code 421 MARKING CODE CGA smd code marking js smd diode marking JC AN-994 IRL640S SMD-220 42s42
    Contextual Info: PD-9.1090 International ioR Rectifier IRL640S HEXFET Power M O SFE T • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs =4V & 5V Fast Switching


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    IRL640S SMD-220 D-6380 MOSFET SMD MARKING CODE 618 SMD DIODE MARKING S28 diode smd marking code 421 MARKING CODE CGA smd code marking js smd diode marking JC AN-994 IRL640S 42s42 PDF

    sem 2105 16 pin

    Abstract: sem 2105
    Contextual Info: DATA SH E E T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz Gate Length: Lg = 0.8 jum recessed gate Gate Width: Wg = 330 fjm 4 pins super mini mold Tape & reel packaging only available


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    NE72118 NE72118-T1 NE72118-T2 NE72118) sem 2105 16 pin sem 2105 PDF

    sl2 357

    Contextual Info: D A TA S H EE T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz • Gate Length: Lg = 0.8 /urn recessed gate • Gate W idth: Wg = 330 /urn • 4 pins super mini mold


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    NE72118 NE72118-T1 NE72118-T2 WS60-00-1 IR30-00-2 sl2 357 PDF

    TIS43

    Abstract: 3N79 3N74 3N108 transistor t05 2N2160 3N77 3n78 2N1671A 2N491A
    Contextual Info: Silicon Transistors Type C ase No. 0 uÏ 0» c œ o " U Characteristics Maxim um R atin gs at 25°C amb. Interbase 'E peak Voltage Intrinsic Peak-current In te rb a se standoff Emitter Current Resistance ratio lp a t V B,B , = 2 5 V t bbo Max. Min. Max.


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    2N489 2N489A 2N489B 2N490 2N490A 2N490B 2N491 2N491A 2N491B 2N492 TIS43 3N79 3N74 3N108 transistor t05 2N2160 3N77 3n78 2N1671A 2N491A PDF

    68000 thomson

    Contextual Info: SGS-THOMSON M g[R ](2m iO T iO (gS TS68008 8/16-B IT MICROPROCESSOR WITH 8-B IT DATA BUS • ■ ■ ■ ■ ■ ■ 17 32-BIT DATA AND ADDRESS REGISTERS 56 BASIC INSTRUCTION TYPES EXTENSIVE EXCEPTION PROCESSING MEMORY MAPPED I/O 14 ADDRESSING MODES 1 MBYTE LINEAR ADDRESSING SPACE


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    TS68008 8/16-B 32-BIT TS68000 TS68008 TS68000 32-bit 16-bit V000257 68000 thomson PDF

    YM3015

    Abstract: njm 4560 sd 2200PF NJM4560 ym30
    Contextual Info: c Y M 3 1 5 2-C hannel Serial & Binary input Floating D /A C onverter DAC-G S g • OUTLINE The YM 3015: DAC-GS is a floating D/A converter (referred to as DAC hereafter) with the 2-channel serial and 16-bit binary input or 2% complement input. It can produce analog output (16-bit dynamic


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    YM3015 16-bit 10-bit YM3015 njm 4560 sd 2200PF NJM4560 ym30 PDF

    smd code marking 2A sot23

    Abstract: POWER MOSFET P1 smd marking code FMS2301 D 304 x
    Contextual Info: Formosa MS SMD MOSFET FMS2301 List List. 1 Package outline. 2 Features. 2


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    FMS2301 MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 smd code marking 2A sot23 POWER MOSFET P1 smd marking code FMS2301 D 304 x PDF

    Contextual Info: Formosa MS ESD N-Channel SMD MOSFET 2N7002K List List. 1 Package outline. 2 Features. 2


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    2N7002K METHOD-1027 500hrs. MIL-STD-750D METHOD-1051 METHOD-1056 1000hrs. METHOD-1038 PDF

    Contextual Info: Formosa MS SMD MOSFET FMS2305A List List. 1 Package outline. 2 Features. 2


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    FMS2305A 500hrs. MIL-STD-750D METHOD-1056 1000hrs. METHOD-1038 METHOD-1031 JESD22-A102 PDF

    TIL406

    Abstract: TIL402 TIL405
    Contextual Info: 6112640 m M ICROPAC IN D U S T R IE S IN C D E ^ b l i a t M D D0D03H1 b T^hi/ M IC RO PA C IN D U S T R IE S , INC. u OPTOELECTRONIC PRODUCTS DIVISION 725 EAST W A LN U T ST. • GARLAND, TEXAS 75040 • 214/276-6905 GENERAL DESCRIPTION GLASS HERMETIC PACKAGE


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    D0D03H1 TIL406 TIL402 TIL405 PDF

    FMS2307

    Contextual Info: Formosa MS SMD MOSFET FMS2307 List List. 1 Package outline. 2 Features. 2


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    FMS2307 MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 FMS2307 PDF

    FMS2309

    Abstract: POWER MOSFET P1 smd marking code TF 2309
    Contextual Info: Formosa MS SMD MOSFET FMS2309 List List. 1 Package outline. 2 Features. 2


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    FMS2309 MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 FMS2309 POWER MOSFET P1 smd marking code TF 2309 PDF

    EIA-541

    Abstract: F7101 IRF7101 IRF9910PbF
    Contextual Info: PD - 95728 IRF9910PbF Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free HEXFET Power MOSFET VDSS 20V Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage


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    IRF9910PbF EIA-481 EIA-541. EIA-541 F7101 IRF7101 IRF9910PbF PDF

    FMS2302

    Abstract: SOT-23 Marking 2302 POWER MOSFET P1 smd marking code
    Contextual Info: Formosa MS SMD MOSFET FMS2302 List List. 1 Package outline. 2 Features. 2


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    FMS2302 MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 FMS2302 SOT-23 Marking 2302 POWER MOSFET P1 smd marking code PDF

    FMS2304

    Abstract: SMD mosfet MARKING code TJ
    Contextual Info: Formosa MS SMD MOSFET FMS2304 List List. 1 Package outline. 2 Features. 2


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    FMS2304 MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 FMS2304 SMD mosfet MARKING code TJ PDF

    Contextual Info: Formosa MS SMD MOSFET FMSBSS123 List List. 1 Package outline. 2 Features. 2


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    FMSBSS123 120sec 260sec 30sec DS-231146 PDF

    Contextual Info: Formosa MS SMD MOSFET FMBSS84 List List. 1 Package outline. 2 Features. 2


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    FMBSS84 120sec 260sec 30sec DS-231142 PDF

    SMD mosfet MARKING code TJ

    Abstract: MOSFET SMD MARKING CODE smd mosfet MOSFET marking smd POWER MOSFET P1 smd marking code 125OC SMD mosfet MARKING code T FMSBSS2310 FMSBSS123
    Contextual Info: Formosa MS SMD MOSFET FMSBSS123 List List. 1 Package outline. 2 Features. 2


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    FMSBSS123 MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 SMD mosfet MARKING code TJ MOSFET SMD MARKING CODE smd mosfet MOSFET marking smd POWER MOSFET P1 smd marking code SMD mosfet MARKING code T FMSBSS2310 FMSBSS123 PDF

    IRLMS6702

    Contextual Info: PD - 91414C IRLMS6702 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on P-Channel MOSFET D D G Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance


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    91414C IRLMS6702 EIA-481 EIA-541. IRLMS6702 PDF

    IRLMS6702PbF

    Abstract: IRLMS 4502 D mosfet 4502 IRLMS1503 IRLMS2002 IRLMS6803
    Contextual Info: PD - 95224 IRLMS6702PbF HEXFET Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on P-Channel MOSFET Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance


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    IRLMS6702PbF leadfram50 EIA-481 EIA-541. information01/05 IRLMS6702PbF IRLMS 4502 D mosfet 4502 IRLMS1503 IRLMS2002 IRLMS6803 PDF

    IRf 444 MOSFET

    Abstract: P-Channel HEXFET Power MOSFET IRLMS1503 IRLMS1902
    Contextual Info: PD - 94896 IRLMS5703PbF l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on P-channel MOSFET Lead-Free Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance


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    IRLMS5703PbF EIA-481 EIA-541. IRf 444 MOSFET P-Channel HEXFET Power MOSFET IRLMS1503 IRLMS1902 PDF